Patent application number | Description | Published |
20080230834 | Semiconductor apparatus having lateral type MIS transistor - A semiconductor apparatus comprises: a semiconductor substrate; and a lateral type MIS transistor disposed on a surface part of the semiconductor substrate. The lateral type MIS transistor includes: a line coupled with a gate of the lateral type MIS transistor; a polycrystalline silicon resistor that is provided in the line, and that has a conductivity type opposite to a drain of the lateral type MIS transistor; and an insulating layer through which a drain voltage of the lateral type MIS transistor is applied to the polycrystalline silicon resistor. | 09-25-2008 |
20080293202 | Method for manufacturing semiconductor device - A semiconductor device includes: a semiconductor substrate with a principal plane; a base region disposed on the principal plane; a source region disposed on the principal plane in the base region to be shallower than the base region; a drain region disposed on the principal plane, and spaced to the base region; a trench disposed on the principal plane; a trench gate electrode disposed in the trench through a trench gate insulation film; a planer gate electrode disposed on the principal plane of the semiconductor substrate through a planer gate insulation film; and an impurity diffusion region having high concentration of impurities and disposed in a portion of the base region to be a channel region facing the planer gate electrode. | 11-27-2008 |
20100102857 | Switching circuit and driving circuit for transistor - A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector. | 04-29-2010 |
20100176480 | Semiconductor device, method for manufacturing the same, and multilayer substrate having the same - A method for manufacturing a semiconductor device includes: preparing a wafer formed of a SOI substrate; forming a circuit portion in a principal surface portion; removing a support substrate of the SOI substrate; fixing an insulation member on a backside of a semiconductor layer so as to be opposite to the circuit portion; dicing the wafer and dividing the wafer into multiple chips; arranging a first conductive member on the insulation member so as to be opposite to a part of the low potential reference circuit, and arranging a second conductive member on the insulation member so as to be opposite to a part of the high potential reference circuit; and coupling the first conductive member with a first part of the low potential reference circuit, and coupling the second conductive member with a second part of the high potential reference circuit. | 07-15-2010 |
20100177829 | Receiving device including impedance control circuit and semiconductor device including impedance control circuit - A receiving device includes a receiving circuit and an impedance control circuit. The receiving circuit receives a signal transmitted through a communication line. The impedance control circuit is coupled with the receiving circuit and has a detecting part. The detecting part detects a physical value of the signal and the physical value includes at least one of a voltage, an electric current, and an electric power. The impedance control circuit changes an input impedance based on the detected value so that a ringing of the signal is reduced. | 07-15-2010 |
20110210766 | DRIVING CIRCUIT FOR TRANSISTOR - A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector. | 09-01-2011 |
20120182051 | DRIVING CIRCUIT FOR TRANSISTOR - A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector. | 07-19-2012 |
20140131798 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor substrate including a first semiconductor layer on the semiconductor substrate; multiple semiconductor elements in the semiconductor substrate; and an ineffective region. Each semiconductor element includes: a second semiconductor layer in a surface portion of the first semiconductor layer; a third semiconductor layer disposed in another surface portion of the first semiconductor layer and spaced a part from the second semiconductor layer; and a control layer disposed on a portion of the first semiconductor layer between the second semiconductor layer and the third semiconductor layer. The ineffective region is disposed in the semiconductor substrate between at least two adjacent semiconductor elements; and does not provide a function of the semiconductor elements. | 05-15-2014 |