Patent application number | Description | Published |
20090001442 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A nonvolatile semiconductor memory device including a semiconductor substrate having a semiconductor layer and an insulating material provided on a surface thereof, a surface of the insulating material is covered with the semiconductor layer, and a plurality of memory cells provided on the semiconductor layer, the memory cells includes a first dielectric film provided by covering the surface of the semiconductor layer, a plurality of charge storage layers provided above the insulating material and on the first dielectric film, a plurality of second dielectric films provided on the each charge storage layer, a plurality of conductive layers provided on the each second dielectric film, and an impurity diffusion layer formed partially or overall at least above the insulating material and inside the semiconductor layer and at least a portion of a bottom end thereof being provided by an upper surface of the insulating material. | 01-01-2009 |
20090004833 | METHOD OF MANUFACTURING SEMICONDUCTOR STORAGE DEVICE - A method of manufacturing a semiconductor storage device includes providing an opening portion in a plurality of positions in an insulating film formed on a silicon substrate, and thereafter forming an amorphous silicon film on the insulating film, in which the opening portions are formed, and in the opening portions. Then, trenches are formed to divide the amorphous silicon film, in the vicinity of a midpoint between adjacent opening portions, into a portion on one opening portion side and a portion on the other opening portion side. Next, the amorphous silicon film, in which the trenches are formed, is annealed and subjected to solid-phase crystallization to form a single crystal with the opening portions used as seeds, and thereby a silicon single-crystal layer is formed. Then, a memory cell array is formed on the silicon single-crystal layer. | 01-01-2009 |
20090011570 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes removing a part of a semiconductor substrate to form a protruding portion and a recess portion in a surface area of the semiconductor substrate, forming a first epitaxial semiconductor layer in the recess portion, forming a second epitaxial semiconductor layer on the protruding portion and the first epitaxial semiconductor layer, removing a first part of the second epitaxial semiconductor layer with a second part of the second epitaxial semiconductor layer left to expose a part of the first epitaxial semiconductor layer, and etching the first epitaxial semiconductor layer from the exposed part of the first epitaxial semiconductor layer to form a cavity under the second part of the second epitaxial semiconductor layer. | 01-08-2009 |
20090014755 | DIRECT BOND SUBSTRATE OF IMPROVED BONDED INTERFACE HEAT RESISTANCE - A direct bond substrate formed by bonding semiconductor substrates together, a semiconductor device using the direct bond substrate and a manufacturing method thereof are disclosed. A nitride film, oxynitride film, carbide film or an oxide film containing carbon is provided on the bonded interface of the semiconductor substrates in the direct bond substrate. | 01-15-2009 |
20090273021 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a semiconductor substrate, a tunnel insulating film on the semiconductor substrate, a charge storage layer on the tunnel insulating film, a block insulating film on the charge storage layer, and a control gate electrode on the block insulating film, the charge storage layer including a plurality of layers including first and second charge storage layers, the second charge storage layer being provided on a nearest side of the block insulating film, the first charge storage layer being provided between the tunnel insulating film and the second charge storage layer, the second charge storage layer having a higher trap density than the first charge storage layer, the second charge storage layer having a smaller band gap than the first charge storage layer, and the second charge storage layer having a higher permittivity than the first charge storage layer and a silicon nitride film. | 11-05-2009 |
20090283821 | NONVOLATILE MEMORY AND MANUFACTURING METHOD THEREOF - Isolation trenches are formed in the main surface of a semiconductor substrate, and isolation regions. are embedded in these trenches. First insulating films, charge storage layers, a second insulating film, and a control gate are formed on the main surface of the semiconductor substrate sectioned by the isolation regions. Shielding layers are arranged in the isolation regions in such a manner that their bottom portions are lower than the channel regions and their upper portions are higher than at least the main surface of the semiconductor substrate to provide an electric and magnetic shield between their storage layers and channel regions of adjacent memory cells. | 11-19-2009 |
20100112791 | METHOD OF MANUFACTURING SEMICONDUCTOR STORAGE DEVICE - A method of manufacturing a semiconductor storage device includes providing an opening portion in a plurality of positions in an insulating film formed on a silicon substrate, and thereafter forming an amorphous silicon film on the insulating film, in which the opening portions are formed, and in the opening portions. Then, trenches are formed to divide the amorphous silicon film, in the vicinity of a midpoint between adjacent opening portions, into a portion on one opening portion side and a portion on the other opening portion side. Next, the amorphous silicon film, in which the trenches are formed, is annealed and subjected to solid-phase crystallization to form a single crystal with the opening portions used as seeds, and thereby a silicon single-crystal layer is formed. Then, a memory cell array is formed on the silicon single-crystal layer. | 05-06-2010 |
20100171164 | Nonvolatile semiconductor memory device and method of manufacturing the same - A nonvolatile semiconductor memory device including a semiconductor substrate having a semiconductor layer and an insulating material provided on a surface thereof, a surface of the insulating material is covered with the semiconductor layer, and a plurality of memory cells provided on the semiconductor layer, the memory cells includes a first dielectric film provided by covering the surface of the semiconductor layer, a plurality of charge storage layers provided above the insulating material and on the first dielectric film, a plurality of second dielectric films provided on the each charge storage layer, a plurality of conductive layers provided on the each second dielectric film, and an impurity diffusion layer formed partially or overall at least above the insulating material and inside the semiconductor layer and at least a portion of a bottom end thereof being provided by an upper surface of the insulating material. | 07-08-2010 |
20100190317 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SILICON OXIDE FILM FORMING METHOD - A semiconductor device manufacturing method has forming element isolation trenches in a semiconductor substrate, forming a silicon compound film in insides of the element isolation trenches in order to embed the element isolation trenches, conducting a first oxidation processing at a first temperature to reform a surface of the silicon compound film to a volatile matter emission preventing layer which permits passage of an oxidizing agent and impurities and which does not permit passage of a volatile matter containing silicon atoms, and conducting a second oxidation processing at a second temperature which is higher than the first temperature to form a coated silicon oxide film inside the element isolation trenches. | 07-29-2010 |
20120034754 | SEMICONDUCTOR DEVICE MANUFACATURING METHOD AND SILICON OXIDE FILM FORMING METHOD - A semiconductor device manufacturing method has forming element isolation trenches in a semiconductor substrate, forming a silicon compound film in insides of the element isolation trenches in order to embed the element isolation trenches, conducting a first oxidation processing at a first temperature to reform a surface of the silicon compound film to a volatile matter emission preventing layer which permits passage of an oxidizing agent and impurities and which does not permit passage of a volatile matter containing silicon atoms, and conducting a second oxidation processing at a second temperature which is higher than the first temperature to form a coated silicon oxide film inside the element isolation trenches. | 02-09-2012 |