Patent application number | Description | Published |
20100009510 | Method of manufacturing semiconductor device - A method of manufacturing a semiconductor device including implanting an impurity ion into a predetermined region of a semiconductor layer using a resist film as a mask, wherein in case when a mask data ratio for implanting the impurity ion only into the predetermined region in the resist film is less than a first reference value, a dummy ion implantation region, into which the impurity ion is also implanted in addition to the predetermined region, is added in a region other than the predetermined region so that a mask data ratio becomes larger than a second reference value which is equal to or larger than the first reference value, the mask data ratio indicating a ratio of an opening with respect to an entire region of a reticle region corresponding to the reticle. | 01-14-2010 |
20100314727 | Semiconductor device - A semiconductor device having a digital region and an analog region embedded therein has an annular seal ring which surrounds the outer circumference of the digital region and the analog region in a plan view; a guard ring which is provided in the area surrounded by the seal ring, between the digital region and the analog region, so as to isolate the analog region from the digital region, and so as to be electrically connected to the seal ring; and an electrode pad which is electrically connected to the guard ring in the vicinity of the guard ring. | 12-16-2010 |
20110049672 | SEMICONDUCTOR DEVICE - A semiconductor device has: a signal pad; a power supply line; a ground line; an inductor section whose one end is connected to the signal pad; a terminating resistor connected between the other end of the inductor section and the power supply line or the ground line. The semiconductor device further has: a first ESD protection element connected to a first node in the inductor section; and a second ESD protection element connected to a second node whose position is different from that of the first node in the inductor section. | 03-03-2011 |
20130147011 | SEMICONDUCTOR DEVICE - A semiconductor device has: a signal pad; a power supply line; a ground line; an inductor section whose one end is connected to the signal pad; a terminating resistor connected between the other end of the inductor section and the power supply line or the ground line. The semiconductor device further has: a first ESD protection element connected to a first node in the inductor section; and a second ESD protection element connected to a second node whose position is different from that of the first node in the inductor section. | 06-13-2013 |
20140078709 | SEMICONDUCTOR DEVICE - To suppress the noise caused by an inductor leaks to the outside, and also to be configured such that magnetic field intensity change reaches the inductor. | 03-20-2014 |
20150048481 | SEMICONDUCTOR DEVICE - To suppress the noise caused by an inductor leaks to the outside, and also to be configured such that magnetic field intensity change reaches the inductor. | 02-19-2015 |
20150061645 | SENSOR DEVICE - This invention provides a sensor device at reduced cost. The sensor device includes a printed circuit board, a first terminal, a second terminal, an interconnect line, and a semiconductor device. The first terminal and second terminal are provided on the printed circuit board and coupled to a power line. The second terminal is coupled to a downstream part of the power line with respect to the first terminal. The interconnect line is disposed on the printed circuit board to couple the first terminal and second terminal to each other. In other words, the interconnect line is coupled to the power line in parallel. The semiconductor device is mounted on the printed circuit board and includes an interconnect layer and an inductor formed in the interconnect layer. | 03-05-2015 |
20150061660 | SENSOR DEVICE - A sensor device includes a power line and a semiconductor device. The semiconductor device includes an inductor. The inductor is formed using an interconnect layer (to be described later using FIG. | 03-05-2015 |