Patent application number | Description | Published |
20080307622 | Method for producing piezoelectric film actuator, and composite structure having piezoelectric layer - A method for producing a piezoelectric film actuator is provided. This method includes the steps of preparing an intermediate transfer member having a porous layer formed thereon, with a vibrating plate and a piezoelectric layer being provided on the porous layer; bonding the vibrating plate to a nozzle substrate to form a composite structure; and separating the intermediate transfer member from the composite structure at the porous layer to transfer the vibrating plate and the piezoelectric layer to the nozzle substrate. | 12-18-2008 |
20100225712 | INKJET HEAD AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing an inkjet head includes providing a piezoelectric substrate having a porous structure, a diaphragm on the porous structure, and a piezoelectric substance layer on the diaphragm, and forming a cavity by etching out the porous structure from the piezoelectric substrate. | 09-09-2010 |
20100330723 | METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - In a method of manufacturing a photoelectric conversion device having a pixel region and a peripheral circuit region, a semiconductor compound layer is formed by causing a surface of a diffusion layer or gate electrode of a MOS transistor in the peripheral circuit region to react with a high melting point metal, then an insulating layer is formed in the pixel region and the peripheral circuit region after the step of forming a semiconductor compound layer. A contact hole is formed in the insulating layer to expose a diffusion layer in the pixel region, and a contact hole is formed in the insulating layer to expose the semiconductor compound layer formed in the peripheral circuit region. These holes are formed at different timings. Prior to forming the hole which is formed later, a contact plug is formed in the contact hole which is formed earlier. | 12-30-2010 |
20110244627 | METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - In a method of manufacturing a photoelectric conversion device having a pixel region and a peripheral circuit region, a semiconductor compound layer is formed by causing a surface of a diffusion layer or gate electrode of a MOS transistor in the peripheral circuit region to react with a high melting point metal, then an insulating layer is formed in the pixel region and the peripheral circuit region after the step of forming a semiconductor compound layer. A contact hole is formed in the insulating layer to expose a diffusion layer in the pixel region, and a contact hole is formed in the insulating layer to expose the semiconductor compound layer formed in the peripheral circuit region. These holes are formed at different timings. Prior to forming the hole which is formed later, a contact plug is formed in the contact hole which is formed earlier. | 10-06-2011 |
20120199893 | SOLID-STATE IMAGE PICKUP APPARATUS, IMAGE PICKUP SYSTEM INCLUDING SOLID-STATE IMAGE PICKUP APPARATUS, AND METHOD FOR MANUFACTURING SOLID-STATE IMAGE PICKUP APPARATUS - A method for manufacturing a solid-state image pickup device is provided. The image pickup apparatus includes a photoelectric conversion portion disposed on the semiconductor substrate, a first insulating film over the photoelectric conversion portion, functioning as an antireflection film, a second insulating film on the first insulating film, disposed corresponding to the photoelectric conversion portion, and a waveguide having a clad and a core whose bottom is disposed on the second insulating film. The method includes forming an opening by anisotropically etching part of a member disposed over the photoelectric conversion portion, thereby forming the clad, and forming the core in the opening. In the method, the etching is performed under conditions where the etching rate of the second insulating film is lower than the etching rate of the member. | 08-09-2012 |
20120199928 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - There are provided a first waveguide member in an imaging region and a peripheral region of a semiconductor substrate and a via plug penetrating the first waveguide member. | 08-09-2012 |
20120202307 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A first waveguide member is formed, as viewed from above, in an image pickup region and a peripheral region of a semiconductor substrate. A part of the first waveguide member, which part is disposed in the peripheral region, is removed. A flattening step is then performed to flatten a surface of the first waveguide member on the side opposite to the semiconductor substrate. | 08-09-2012 |
20120202312 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - An interlayer insulating film is disposed above an image pickup region and a peripheral region of the semiconductor substrate. An opening is formed in the interlayer insulating film at a position overlying a photoelectric conversion portion. A waveguide member is formed above the image pickup region and the peripheral region of the semiconductor substrate. A part of the waveguide member, which part is disposed above the peripheral region, is removed such that the interlayer insulating film is exposed. | 08-09-2012 |
20130087838 | PHOTOELECTRIC CONVERSION DEVICE AND IMAGING SYSTEM - A photoelectric conversion device includes a film that covers the photoelectric conversion part and a transfer gate electrode, wherein a first region having a refractive index lower than refractive indices of the film and the photoelectric conversion part, is provided between the film and the photoelectric conversion part, and a second region having a refractive index lower than the refractive indices of the transfer gate electrode and the film, is provided between the film and the top surface of the transfer gate electrode, and wherein T | 04-11-2013 |
20130089947 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Manufacturing a semiconductor device includes preparing a structure including a semiconductor substrate having a first region and a second region, a first insulating film arranged on the first region, a second insulating film arranged on the first insulating film, a third insulating film arranged on the second insulating film, a fourth insulating film arranged on the second region, a fifth insulating film arranged on the fourth insulating film, and a sixth insulating film arranged on the fifth insulating film, etching the second insulating film and the first insulating film under different etching conditions after etching the third insulating film, and continuously etching the fifth insulating film and the fourth insulating film under the same etching conditions after etching the sixth insulating film. | 04-11-2013 |
20130089963 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A drain of a first transistor is formed by performing ion implantation on a semiconductor substrate using a first member as a mask for a gate electrode of the first transistor. Further, ion implantation is performed on the gate electrode of the second transistor after thinning a second member. | 04-11-2013 |
20130089975 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device having a MOS transistor, includes forming a gate electrode material layer on a first insulating film formed on a semiconductor substrate, forming an etching mask on the gate electrode material layer, forming a gate electrode by patterning the gate electrode material layer such that a protective film that protects at least a lower portion of a side face of the gate electrode and a portion of the first insulating film, which is adjacent to the side face, is formed while the gate electrode material layer is patterned, forming a second insulating film on the semiconductor substrate on which the gate electrode is formed, and forming an interlayer insulation film on the second insulating film. | 04-11-2013 |
20130171764 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device, the method comprising, forming a first opening in a first insulating layer provided above a semiconductor substrate, forming a first contact plug by depositing a conductive member in the first opening and removing a part of the conductive member so as to expose the first insulating layer, forming a second insulating layer over the first insulating layer after forming the first contact plug, forming a second opening in the first and second insulating layers without exposing the first contact plug, forming a second contact plug by depositing the conductive member in the second opening and removing a part of the conductive member so as to expose the second insulating layer, and removing the second insulating layer so as to expose the first contact plug after forming the second contact plug. | 07-04-2013 |
20140045292 | METHOD OF MANUFACTURING IMAGE PICKUP DEVICE - A method of manufacturing an image pickup device includes a step of forming a filling member such that the filling member covers a light guiding part and a peripheral part provided in a film. The light guiding part is positioned on an image pickup region of the image pickup device and has openings that correspond to respective photoelectric conversion portions. The peripheral part is positioned on a peripheral region of the image pickup device. The filling member fills in the openings. The method includes a step of processing the filling member. The method includes a step of forming light guiding members, which is performed after the step of processing filling member has been performed, by a polishing process performed on the filling member so that the light guiding part is exposed. The light guiding members are part of the filling member and disposed in the openings. | 02-13-2014 |
20140045294 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A substrate includes a first region having photoelectric conversion portions and a second region having an element included in a signal processing circuit. An insulator including first and second parts respectively arranged on the first and second regions is formed on the substrate. Openings are formed in the insulator and respectively superposed on the photoelectric conversion portions. A first member is formed in the openings and on the second part of the insulator after forming the openings. At least a portion of the first member arranged on the second region is removed. The first member is planarized after removing at least the portion of the first member. A second insulator is formed on the first and second regions after planarizing the first member. A through-hole is formed in a part of the second insulator. No planarization with grinding is performed after forming the second insulator and before forming the through-hole. | 02-13-2014 |