Patent application number | Description | Published |
20090147490 | SUBSTRATE FOR WIRING, SEMICONDUCTOR DEVICE FOR STACKING USING THE SAME, AND STACKED SEMICONDUCTOR MODULE - In a stacked semiconductor module, a test covering connecting terminals is easily conducted and high reliability is achieved. | 06-11-2009 |
20100096739 | STACKED SEMICONDUCTOR MODULE - A stacked semiconductor module is made by stacking a second semiconductor device having a second semiconductor chip mounted to the top surface of a second semiconductor substrate above the top surface of a first semiconductor device having a first semiconductor chip mounted to a first semiconductor substrate. The top surface of the first semiconductor substrate is provided with a first connection terminal and the bottom surface of the first semiconductor substrate is provided with an external connection terminal. A region of the bottom surface of the second semiconductor substrate lying opposite to the second semiconductor chip is provided with a second connection terminal. A conductive connecting member connects the first connection terminal to the second connection terminal. | 04-22-2010 |
20100148342 | STACKED SEMICONDUCTOR MODULE - A stacked semiconductor module is made by stacking a second semiconductor device having a second semiconductor chip mounted to the top surface of a second semiconductor substrate above the top surface of a first semiconductor device having a first semiconductor chip mounted to a first semiconductor substrate. The top surface of the first semiconductor substrate is provided with a first connection terminal and the bottom surface of the first semiconductor substrate is provided with an external connection terminal. A region of the bottom surface of the second semiconductor substrate lying opposite to the second semiconductor chip is provided with a second connection terminal. A conductive connecting member connects the first connection terminal to the second connection terminal. | 06-17-2010 |
20100295186 | SEMICONDUCTOR MODULE FOR STACKING AND STACKED SEMICONDUCTOR MODULE | 11-25-2010 |
20110156271 | SEMICONDUCTOR MODULE - A semiconductor module having a second semiconductor package | 06-30-2011 |
20120070917 | APPARATUS AND METHOD FOR MOUNTING SEMICONDUCTOR LIGHT EMITTING ELEMENT - When bump electrodes | 03-22-2012 |
20120161313 | SEMICONDUCTOR DEVICE, AND INSPECTION METHOD THEREOF - In a substrate for a stacking-type semiconductor device including a connection terminal provided for a connection with a semiconductor chip to be stacked and an external terminal connected to the connection terminal through a conductor provided in a substrate, connection terminals of a power supply, a ground and the like, which terminals have an identical node, are electrically continuous with each other. Thus, it is possible to facilitate an inspection of electrical continuity between each connection terminal and an external terminal corresponding to each connection terminal by minimum addition of inspecting terminals. Further, it is possible to improve reliability of a stacking-type semiconductor module. | 06-28-2012 |
20140103502 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first semiconductor chip held on a substrate and including an expanded portion expanding outward from a side surface of a body of the first semiconductor chip; a first wire connecting the expanded portion of the first semiconductor chip to the substrate; and a second wire connecting the body of the first semiconductor chip to the substrate. | 04-17-2014 |
20140103504 | SEMICONDUCTOR DEVICE - A first chip including electrodes is mounted above an expanded semiconductor chip formed by providing an expanded portion at an outer edge of a second chip including chips. The electrodes of the first chip are electrically connected to the electrodes of the second chip by conductive members. A re-distribution structure is formed from a top of the first chip outside a region for disposing the conductive members along a top of the expanded portion. Connection terminals are provided above the expanded portion, and electrically connected to ones of the electrodes of the first chip via the re-distribution structure. | 04-17-2014 |
20140103536 | SEMICONDUCTOR DEVICE - A semiconductor device includes: on an upper surface of a second semiconductor chip on a circuit board, a ring dam section formed at an outer circumference of a mounting region above which a first semiconductor chip is mounted; and an interconnect extending from the dam section to a center section of the first semiconductor chip or the second semiconductor chip in a region in which the first semiconductor chip faces the second semiconductor chip. The interconnect is electrically connected to a connection terminal on a circuit formation surface of the first or second semiconductor chip at the center section of the first or second semiconductor chip. The dam section and the interconnect are power supply interconnects or ground interconnects. | 04-17-2014 |
20140103544 | SEMICONDUCTOR DEVICE - A semiconductor device includes an extended semiconductor chip including a first semiconductor chip and an extension outwardly extending from a side surface of the first semiconductor chip; and a second semiconductor chip connected to the extended semiconductor chip through a plurality of bumps and electrically connected to the first semiconductor chip. The first semiconductor chip is smaller than the second semiconductor chip. At least one external terminal is provided on the extension. | 04-17-2014 |
20140327157 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A lamination structure includes a first semiconductor chip and a second semiconductor chip stacked via a bonding section so that a rear surface of the first semiconductor chip faces the main surface of the second semiconductor chip. At least a part of a side surface of the first semiconductor chip are covered with a first resin, a distribution layer is formed on the plane formed of the main surface of the first semiconductor chip and a surface of the first resin. At least part of electrodes existing in the main surface of the second semiconductor chip is electrically connected to at least part of first external electrodes formed on the distribution layer via the penetration electrodes that penetrate the first semiconductor chip. | 11-06-2014 |