Patent application number | Description | Published |
20080247937 | Carbonate and method for producing the same - To provide a method for producing a carbonate, including: growing seed crystals, wherein the seed crystals are grown in a reaction solution containing at least urea. An aspect in which the seed crystals are strontium carbonate particles, an aspect in which the reaction solution contains a metal ion source and the metal ion source is a hydroxide of strontium, and the like are favorable. | 10-09-2008 |
20100196712 | STAR-SHAPED ZINC OXIDE PARTICLES AND METHOD FOR PRODUCING THE SAME - A method for producing star-shaped zinc oxide particles, the method including heating a solution containing tetrahydroxozincate(II) ion [Zn(OH) | 08-05-2010 |
20100213462 | METAL OXIDE STRUCTURE AND METHOD FOR PRODUCING THE SAME, AND LIGHT-EMITTING ELEMENT - A method for producing a metal oxide structure, including: forming a layer containing metal acetate hydrate on a sapphire substrate; subjecting the layer containing the metal acetate hydrate to an insolubilization treatment; and immersing the sapphire substrate having the insolubilized layer in a reaction solution containing a metal ion and an NH | 08-26-2010 |
20100260693 | COSMETIC COMPOSITION - A cosmetic composition contains star-shaped zinc oxide particles each having a star shape, and containing zinc oxide as a main substance thereof. | 10-14-2010 |
20110081743 | BUFFER LAYER AND MANUFACTURING METHOD THEREOF, REACTION SOLUTION, PHOTOELECTRIC CONVERSION DEVICE, AND SOLAR CELL - A buffer layer manufacturing method, including: a preparation step for preparing a reaction solution which includes a component (Z) of at least one kind of zinc source, a component (S) of at least one kind of sulfur source, a component (C) of at least one kind of citrate compound, a component (N) of at least one kind selected from the group consisting of ammonia and ammonium salt, and water, in which the concentration of the component (C) is 0.001 to 0.25M, the concentration of the component (N) is 0.001 to 0.40M, and the pH of the reaction solution before the start of reaction is 9.0 to 12.0; and a film forming step for forming a Zn compound layer consisting primarily of Zn(S, O) and/or Zn(S, O, OH) by a liquid phase method with a reaction temperature of 70 to 95° C. | 04-07-2011 |
20110081744 | BUFFER LAYER AND MANUFACTURING METHOD THEREOF, REACTION SOLUTION, PHOTOELECTRIC CONVERSION DEVICE, AND SOLAR CELL - A buffer layer manufacturing method, including the steps of forming a fine particle layer of ZnS, Zn(S, O), and/or Zn(S, O, OH), mixing an aqueous solution (I) which includes a component (Z), an aqueous solution (II) which includes a component (S), and an aqueous solution (III) which includes a component (C) to obtain a mixed solution and mixing an aqueous solution (IV) which includes a component (N) in the mixed solution to prepare a reaction solution in which the concentration of the component (C) is 0.001 to 0.25M, concentration of the component (N) is 0.41 to 1.0M, and the pH before the start of reaction is 9.0 to 12.0, and, using the reaction solution, forming a Zn compound layer of Zn(S, O) and/or Zn(S, O, OH) on the fine particle layer by a liquid phase method with a reaction temperature of 70 to 95° C. | 04-07-2011 |
20110180135 | BUFFER LAYER MANUFACTURING METHOD AND PHOTOELECTRIC CONVERSION DEVICE - A method of manufacturing a buffer layer of a photoelectric conversion device having a stacked structure in which a lower electrode, a photoelectric conversion semiconductor layer that generates a current by absorbing light, the buffer layer, and a translucent conductive layer are stacked on a substrate, in which the buffer layer is formed by a CBD method, a pH variation of reaction solution for forming the buffer layer is controlled within 0.5 while deposition of the buffer layer by the CBD method is in progress, and the reaction solution includes a Cd or Zn metal and a sulfur source. | 07-28-2011 |
20110186124 | ELECTRICALLY CONDUCTIVE ZINC OXIDE LAYERED FILM AND PHOTOELECTRIC CONVERSION DEVICE COMPRISING THE SAME - An electrically conductive zinc oxide layered film having been formed on a substrate, at least a surface of the substrate being electrically non-conductive, comprises: (i) an electrically conductive zinc oxide fine particle layer, which is formed on the electrically non-conductive surface of the substrate, and which comprises at least one kind of a plurality of fine particles containing electrically conductive zinc oxide as a principal ingredient, and (ii) an electrically conductive zinc oxide thin film layer, which is formed on the electrically conductive zinc oxide fine particle layer. | 08-04-2011 |
20110186125 | PROCESS FOR PRODUCING ELECTRICALLY CONDUCTIVE ZINC OXIDE LAYERED FILMS AND PROCESS FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICES - For production of an electrically conductive zinc oxide layered film, a substrate, at least a surface of the substrate being electrically non-conductive, is prepared. An underlayer is formed with a coating technique on the electrically non-conductive surface of the substrate, the underlayer comprising at least one kind of a plurality of fine particles containing electrically conductive zinc oxide as a principal ingredient. An electrically conductive zinc oxide thin film layer is formed with a chemical bath deposition technique on the underlayer. | 08-04-2011 |
20110186955 | METHOD OF PRODUCING PHOTOELECTRIC CONVERSION DEVICE AND PHOTOELECTRIC CONVERSION DEVICE - A method of producing a photoelectric conversion device having a multilayer structure, which includes a lower electrode, a photoelectric conversion layer made of a compound semiconductor layer, a buffer layer made of a compound semiconductor layer, and a transparent conductive layer, formed on a substrate is disclosed. Prior to a buffer layer forming step of forming the buffer layer on the photoelectric conversion layer, Cd ions are diffused into the photoelectric conversion layer by immersing the substrate including the photoelectric conversion layer on the surface thereof in an aqueous solution, which is controlled to a predetermined temperature not less than 40° C. and less than 100° C., contains at least one Cd source and at least one alkaline agent and contains no S ion source, and has a Cd ion concentration of not less than 0.1 M and a pH value in the range from 9 to 13. | 08-04-2011 |
20110189814 | PROCESS FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICES - In a process for producing a photoelectric conversion device comprising a bottom electrode layer, a photoelectric conversion semiconductor layer, a buffer layer, and a transparent conductive layer, which are stacked in this order on a substrate, all film forming stages ranging from a stage of forming the buffer layer to a stage of forming the transparent conductive layer are performed with a liquid phase technique. The buffer layer is formed with a chemical bath deposition technique, and the transparent conductive layer is formed with an electrolytic deposition technique. | 08-04-2011 |
20110189816 | METHOD OF PRODUCING PHOTOELECTRIC CONVERSION DEVICE - A method of producing a photoelectric conversion device having a multilayer structure formed on a substrate, the multilayer structure including a lower electrode, a photoelectric conversion layer made of a compound semiconductor layer, an n-type buffer layer made of a compound semiconductor layer, and a transparent conductive layer, is disclosed. A reaction solution, which is an aqueous solution containing an n-type dopant element, at least one of ammonia and an ammonium salt, and thiourea, is prepared, the n-type dopant is diffused into the photoelectric conversion layer by immersing the substrate including the photoelectric conversion layer in the reaction solution controlled to a temperature in the range from 20° C. to 45° C.; and the buffer layer is deposited on the photoelectric conversion layer by immersing the substrate including the photoelectric conversion layer subjected to the diffusion step in the reaction solution controlled to a temperature in the range from 70° C. to 95° C. | 08-04-2011 |
20140186988 | CHEMICAL BATH DEPOSITION APPARATUS, METHOD OF FORMING BUFFER LAYER AND METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - A chemical bath deposition apparatus includes: a reaction vessel for containing a reaction solution for chemical bath deposition to form a film on a surface of a substrate; a substrate holding section for holding the substrate such that at least the surface of the substrate contacts the reaction solution, the substrate holding section including a fixing surface made of stainless steel on which a back side of the substrate is closely fixed; a heater disposed at a rear side of the fixing surface, the heater heating the substrate from the back side of the substrate; and a reaction solution temperature control unit for controlling temperature of the reaction solution in the reaction vessel. | 07-03-2014 |