Patent application number | Description | Published |
20100152370 | RUBBER MIXTURES WITH FUNCTIONALIZED DIENE RUBBERS AND WITH MICROGELS, A PRODUCTION PROCESS, AND USE OF THE MIXTURESu - The present invention relates to rubber mixtures with functionalized diene rubbers and with microgels, to a production process, and to the use of the mixtures for the production of low-abrasion motor-vehicle tyres which have wet-slip resistance and which have low rolling resistance. | 06-17-2010 |
20110003932 | FUNCTIONALIZED HIGH VINYL DIENE RUBBERS - The present invention relates to functionalized high-vinyl-content diene rubbers, to the preparation of rubber mixtures which comprise functionalized high-vinyl-content diene rubbers, and to the use thereof for the production of rubber vulcanizates which serve in particular for the production of highly reinforced rubber mouldings, particularly preferably for the production of tyres, where these have particularly low rolling resistance, and particularly high wet skid resistance and abrasion resistance. | 01-06-2011 |
20110021660 | FUNCTIONALIZED CARBON BLACK-FILLED RUBBERS - The invention relates to functionalized carbon black-filled rubbers, to the production of such rubber mixtures and to their use in producing vulcanized rubbers that are especially used for producing highly reinforced molded rubber products, especially for producing tires that have an especially low rolling resistance, especially good non-skid properties on wet surfaces and a good abrasion resistance. | 01-27-2011 |
20110230624 | NANOSTRUCTED POLYMERS ON THE BASIS OF CONJUGATED DIENES - The present invention relates to nano-structured diene polymers and their preparation and to their use. | 09-22-2011 |
20110251348 | MODIFIED POLYMERS ON THE BASIS OF CONJUGATED DIENES OR OF CONJUGATED DIENES AND VINYL AROMATIC COMPOUNDS, A METHOD FOR THE PRODUCTION THEREOF AND THE USE THEREOF - The present invention relates to polymers based on conjugated dienes or on conjugated dienes and vinylaromatic compounds, to a process for their preparation, and to their use. | 10-13-2011 |
20110282001 | FUNCTIONALIZED DIENE RUBBERS - The present invention relates to functionalised diene rubbers and their production, to rubber mixtures, comprising these functionalised diene rubbers, and to their use for the production of rubber vulcanisates, which serve in particular for the production of highly reinforced rubber mouldings. Particular preference is given to the use in the production of tyres which have particularly low rolling resistance, and particularly high wet slip resistance and abrasion resistance. | 11-17-2011 |
20120041129 | RUBBER MIXTURES CONTAINING SILANE AND HAVING POSSIBLY FUNCTIONALIZED DIENE RUBBERS AND MICROGELS, A METHOD FOR THE PRODUCTION THEREOF, AND USE THEREOF - The invention relates to rubber mixtures containing silane and having possibly functionalized diene rubbers and microgels, to a method for the production thereof, and to the use thereof to produce wet slipping resistant and low-rolling resistance motor vehicle tire treads having high abrasion resistance. | 02-16-2012 |
20130046064 | USE OF SURFACE-TREATED CARBON BLACKS IN AN ELASTOMER TO REDUCE COMPOUND HYSTERESIS AND TIRE ROLLING RESISTANCE AND IMPROVE WET TRACTION - A composition of a surface-treated-carbon-black and a functionalized polymer with functionalization along the polymer chain is disclosed, wherein the polymer represents a solution SBR including, but not limited to blends of the SBR (PBR4003) with BR, NR and EPDM, and the SBR polymer functionalization comprises polar, oxygen-containing functional groups, such that the compound exhibits reduced hysteresis and rolling resistance, improved wet traction with excellent abrasion resistance as would be used in passenger, truck and racing tires. | 02-21-2013 |
20130172489 | BIMODAL NEODYMIUM-CATALYZED POLYBUTADIENE - The invention relates to a high molecular weight bimodal neodymium-catalysed polybutadiene having a high proportion, >95%, of cis-1,4 units and a low proportion, <1%, of 1,2-vinyl content, wherein the polybutadiene has a linear polymeric main fraction and a long chain branched polymeric fraction, wherein the slope in the RGM relationship is >0.5 for the polymeric main fraction and <0.3 for the long chain branched polymeric fraction. | 07-04-2013 |
20130281609 | FUNCTIONALIZED HIGH VINYL DIENE RUBBERS - The present invention relates to functionalized high-vinyl-content diene rubbers, to the preparation of rubber mixtures which comprise functionalized high-vinyl-content diene rubbers, and to the use thereof for the production of rubber vulcanizates which serve in particular for the production of highly reinforced rubber mouldings, particularly preferably for the production of tyres, where these have particularly low rolling resistance, and particularly high wet skid resistance and abrasion resistance. | 10-24-2013 |
Patent application number | Description | Published |
20110233721 | SEMICONDUCTOR COMPONENT AND METHODS FOR PRODUCING A SEMICONDUCTOR COMPONENT - A semiconductor component includes a semiconductor body, in which are formed: a substrate of a first conduction type, a buried semiconductor layer of a second conduction type arranged on the substrate, and a functional unit semiconductor layer of a third conduction type arranged on the buried semiconductor layer, in which at least two semiconductor functional units arranged laterally alongside one another are provided. The buried semiconductor layer is part of at least one semiconductor functional unit, the semiconductor functional units being electrically insulated from one another by an isolation structure which permeates the functional unit semiconductor layer, the buried semiconductor layer, and the substrate. The isolation structure includes at least one trench and an electrically conductive contact to the substrate, the contact to the substrate being electrically insulated from the functional unit semiconductor layer and the buried layer by the at least one trench. | 09-29-2011 |
20110256688 | SEMICONDUCTOR COMPONENT AND METHODS FOR PRODUCING A SEMICONDUCTOR COMPONENT - A semiconductor component includes a semiconductor body, in which are formed: a substrate of a first conduction type, a buried semiconductor layer of a second conduction type arranged on the substrate, and a functional unit semiconductor layer of a third conduction type arranged on the buried semiconductor layer, in which at least two semiconductor functional units arranged laterally alongside one another are provided. The buried semiconductor layer is part of at least one semiconductor functional unit, the semiconductor functional units being electrically insulated from one another by an isolation structure which permeates the functional unit semiconductor layer, the buried semiconductor layer, and the substrate. The isolation structure includes at least one trench and an electrically conductive contact to the substrate, the contact to the substrate being electrically insulated from the functional unit semiconductor layer and the buried layer by the at least one trench. | 10-20-2011 |
20130099308 | Semiconductor Device Having a Through Contact and a Manufacturing Method Therefor - According to an embodiment, a method of forming a semiconductor device includes: providing a wafer having a semiconductor substrate with a first side a second side opposite the first side, and a dielectric region arranged on the first side; mounting the wafer with the first side on a carrier system; etching a deep vertical trench from the second side through the semiconductor substrate to the dielectric region, thereby insulating a mesa region from the remaining semiconductor substrate; and filling the deep vertical trench with a dielectric material. | 04-25-2013 |
20140141608 | SEMICONDUCTOR COMPONENT AND METHODS FOR PRODUCING A SEMICONDUCTOR COMPONENT - A method for producing a semiconductor component with a semiconductor body includes providing a substrate of a first conductivity type. A buried semiconductor layer of a second conductivity type is provided on the substrate. A functional unit semiconductor layer is provided on the buried semiconductor layer. At least one trench, which reaches into the substrate, is formed in the semiconductor body. An insulating layer is formed, which covers inner walls of the trench and electrically insulates the trench interior from the functional unit semiconductor layer and the buried semiconductor layer, the insulating layer having at least one opening in the region of the trench bottom. The at least one trench is filled with an electrically conductive semiconductor material of the first conductivity type, wherein the electrically conductive semiconductor material forms an electrical contact from a surface of the semiconductor body to the substrate. | 05-22-2014 |
20140299972 | SEMICONDUCTOR DEVICE HAVING A THROUGH CONTACT - A semiconductor device includes a semiconductor substrate having a first side and a second side opposite the first side, an active area and a through contact area, the active area including a transistor structure having a control electrode, the through contact area including a semiconductor mesa having insulated sidewalls. The semiconductor device further includes a first metallization on the first side in the active area and a recess extending from the first side into the semiconductor substrate and between the active area and the through contact area and including in the through contact area a horizontally widening portion, the recess being at least partly filled with a conductive material forming a first conductive region in ohmic contact with the semiconductor mesa and the transistor structure. The semiconductor device also includes a control metallization on the second side and in ohmic contact with the semiconductor mesa. | 10-09-2014 |