Patent application number | Description | Published |
20090001374 | Tft Substrate, Reflective Tft Substrate and Method for Manufacturing These Substrates - An object of the invention is to propose a TFT substrate and a reflective TFT substrate which can be operated stably for a prolonged period of time, can be prevented from being suffering from crosstalk, and is capable of significantly reducing manufacturing cost by decreasing the number of production steps, as well as to propose the method for producing these substrates. | 01-01-2009 |
20090121199 | IN SM OXIDE SPUTTERING TARGET - A sputtering target which is formed of a sintered body including an oxide main components of which are In and Sm. A sputtering target in which a sintered body of an oxide including In and Sm as main components is doped with at least one element with an atomic valency of positive tetravalency or higher in an amount of 20 at. % or less relative to the total sum of all cation elements. | 05-14-2009 |
20090127548 | SEMICONDUCTOR THIN FILM AND PROCESS FOR PRODUCING THE SAME - This invention provides a transparent oxide semiconductor, which comprises an oxide comprising indium oxide as a main component and cerium oxide as an additive and has such properties that light-derived malfunction does not occur, there is no variation in specific resistance of a thin film caused by heating and the like, and the mobility is high, and a process for producing the same. A semiconductor thin film characterized by comprising indium oxide and cerium oxide and being crystalline and having a specific resistance of 10 | 05-21-2009 |
20090160741 | ELECTRO-OPTIC DEVICE, AND TFT SUBSTRATE FOR CURRENT CONTROL AND METHOD FOR MANUFACTURING THE SAME - To provide an electro-optic apparatus which can directly control alternating current, output significantly high-frequency alternating current, stably output a large amount of power, and reduce manufacturing cost, as well as a TFT substrate for current control and the method for producing the same. | 06-25-2009 |
20090250668 | AMORPHOUS TRANSPARENT CONDUCTIVE FILM, TARGET AND PRODUCTION METHOD FOR AMORPHOUS CONDUCTIVE FILM - An amorphous transparent conductive film containing as a main component a six oxygen-coordinated metal oxide, and satisfying, in a radial distribution function (RDF) obtained by an X-ray scattering measurement, a relationship of A/B>1, providing that the maximum value of RDF at an interatomic distance of from 0.30 nm to 0.36 nm is A and the maximum value of RDF at an interatomic distance of from 0.36 nm to 0.42 nm is B. | 10-08-2009 |
20090267064 | SEMICONDUCTOR THIN FILM AND METHOD FOR MANUFACTURING SAME, AND THIN FILM TRANSISTOR - The present invention provides a semiconductor thin film which can be manufactured at a relatively low temperature even on a flexible resin substrate. As a semiconductor thin film having a low carrier concentration, a high Hall mobility and a large energy band gap, an amorphous film containing zinc oxide and tin oxide is formed to obtain a carrier density of 10 | 10-29-2009 |
20090308635 | SPUTTERING TARGET, TRANSPARENT CONDUCTIVE FILM, AND TRANSPARENT ELECTRODE FOR TOUCH PANEL - A sputtering target which is composed of a sintered body of an oxide containing indium, tin and zinc as main components; the atomic ratio of In/(In+Sn+Zn) being 0.10 to 0.35; the atomic ratio of Sn/(In+Sn+Zn) being 0.15 to 0.35; and the atomic ratio of Zn/(In+Sn+Zn) being 0.50 to 0.70; and containing a hexagonal layered compound shown by In | 12-17-2009 |
20100053523 | TRANSPARENT CONDUCTIVE FILM, AND SUBSTRATE, ELECTRONIC DEVICE AND LIQUID CRYSTAL DISPLAY USING THE SAME - A transparent conductive film including an indium oxide, a tin oxide and at least one lanthanoid metal oxide, the film including a portion connected to a conductor, and at least the connection portion having crystallinity. | 03-04-2010 |
20100127253 | TFT SUBSTRATE AND METHOD FOR MANUFACTURING TFT SUBSTRATE - An object of the invention is to provide a TFT substrate and a method for producing a TFT substrate which is capable of drastically reducing the production cost by decreasing the number of steps in the production process and improving production yield. A TFT substrate includes: a substrate; a gate electrode and a gate wire formed above the substrate; a gate insulating film formed above the gate electrode and the gate wire; a first oxide layer formed above the gate insulating film which is formed at least above the gate electrode; and a second oxide layer formed above the first oxide layer; wherein at least a pixel electrode is formed from the second oxide layer. | 05-27-2010 |
20100163860 | SEMICONDUCTOR THIN FILM, METHOD FOR MANUFACTURING THE SAME, THIN FILM TRANSISTOR, AND ACTIVE-MATRIX-DRIVEN DISPLAY PANEL - Disclosed is a semiconductor thin film which can be formed at a relatively low temperature even on a flexible resin substrate. Since the semiconductor thin film is stable to visible light and has high device characteristics such as transistor characteristics, in the case where the semiconductor thin film is used as a switching device for driving a display, even when overlapped with a pixel part, the luminance of a display panel does not deteriorate. Specifically, a transparent semiconductor thin film | 07-01-2010 |
20100163876 | REFLECTIVE TFT SUBSTRATE AND METHOD FOR MANUFACTURING REFLECTIVE TFT SUBSTRATE - A reflective TFT substrate which can be operated for a prolonged period of time due to the presence of a protective insulating film, is free from occurrence of crosstalk, and is capable of significantly reducing manufacturing cost by decreasing the production steps in the production process. A reflective TFT substrate | 07-01-2010 |
20100170696 | SPUTTERING TARGET, TRANSPARENT CONDUCTIVE FILM AND TRANSPARENT ELECTRODE - A sputtering target which is composed of a sintered body of an oxide which contains at least indium, tin, and zinc and includes a spinel structure compound of Zn | 07-08-2010 |
20100266787 | OXIDE MATERIAL AND SPUTTERING TARGET - An oxide material including indium (In), tin (Sn), and metal element M, and including an ilmenite structure compound; a sputtering target composed thereof; a transparent conductive film formed by using such a sputtering target; and a transparent electrode composed of such a transparent conductive film. | 10-21-2010 |
20100282604 | LANTHANOID-CONTAINING OXIDE TARGET - An oxide target including indium (In) and an element (A) selected from the following group A, wherein it contains an oxide shown by AInO | 11-11-2010 |
20100283055 | TFT SUBSTRATE AND TFT SUBSTRATE MANUFACTURING METHOD - An object of the invention is to provide a TFT substrate and a method for producing a TFT substrate which is capable of drastically reducing the production cost by decreasing the number of steps in the production process and improving production yield. A TFT substrate comprises: a substrate; a first oxide layer formed above the substrate; a second oxide layer formed above the first oxide layer with a channel part interposed therebetween; a gate insulating film formed above the substrate, the first oxide layer and the second oxide layer; a gate electrode and a gate wire formed above the gate insulating film. | 11-11-2010 |
20110121244 | SPUTTERING TARGET, TRANSPARENT CONDUCTIVE FILM AND TRANSPARENT ELECTRODE - A sputtering target including indium, tin, zinc and oxygen, and including a hexagonal layered compound, a spinel structure compound and a bixbyite structure compound. | 05-26-2011 |