Patent application number | Description | Published |
20130040062 | LIQUID PROCESSING METHOD - A liquid processing method forms a coating film by supplying and pouring a coating solution from a coating solution nozzle onto a surface of a substrate held substantially horizontally by a substrate holder. In the liquid processing method, a process for photographing a leading end portion of a coating solution nozzle is provided. When performing a process for anti-drying of the coating solution for a long period of time in advance, a position of the coating solution and a position of an anti-drying liquid are set by using a soft scale displayed on a screen where the photographed image is displayed. Therefore, a dispense control is performed based on a set value without depending on the naked eyes and a control for suppressing the drying of the coating solution in the leading end portion of the coating solution nozzle is performed. | 02-14-2013 |
20130061878 | HIGH THROUGHPUT PROCESSING SYSTEM FOR CHEMICAL TREATMENT AND THERMAL TREATMENT AND METHOD OF OPERATING - A high throughput processing system having a chemical treatment system and a thermal treatment system for processing a plurality of substrates is described. The chemical treatment system is configured to chemically treat a plurality of substrates in a dry, non-plasma environment. The thermal treatment system is configured to thermally treat a plurality of substrates chemically treated in the chemical treatment system. | 03-14-2013 |
20130062199 | FILM-FORMING APPARATUS FOR FORMING A CATHODE ON AN ORGANIC LAYER FORMED ON A TARGET OBJECT - A material having a low work function is quickly inserted near an interface between an organic layer and a cathode. A sputtering apparatus (Sp) includes a target material formed of silver (Ag), a dispenser formed outside a processing container and evaporating cesium (Cs) having a lower work function than silver (Ag) by heating the cesium (Cs), a first gas supply pipe communicating with the dispenser to transfer steam of the evaporated cesium (Cs) to the processing container by using argon gas as a carrier gas, and a high frequency power supply source supplying high frequency power to the processing container. A controller generates plasma by exciting the argon gas by using energy of the high frequency power, and while forming a metal electrode by using an silver (Ag) atom, wherein the Ag atom is generated from a the target material by using the generated plasma, controls a ratio of the cesium (Cs) mixed with the metal electrode. | 03-14-2013 |
20130065399 | PLASMA PROCESSING METHOD - A plasma processing method includes holding a wafer on a holding stage, generating plasma inside the processing chamber by a plasma generator to define a first processing region having an electron temperature higher than a predetermined value and a second processing region having an electron temperature lower than the predetermined value, moving the holding stage for the wafer to be positioned in the first processing region, performing the plasma processing of the wafer positioned in the first processing region, moving the holding stage for the wafer to be positioned in the second processing region, and stopping to generate plasma when the wafer is positioned in the second processing region after completion of the plasma processing. | 03-14-2013 |
20130074281 | PARTICLE COLLECTING APPARATUS AND PARTICLE COLLECTING METHOD - A particle collecting apparatus is provided with a case, an ultrasonic generator, a gas supplying unit, a suction unit and a seal member. The case has one end, and defines a space at the one end. The ultrasonic generator is provided in the case, and generates ultrasonic waves towards the opening defined by the one end of the case. The gas supplying unit supplies gas to the space. The suction unit exhausts the space. The seal member has elasticity, and is provided at the one end so as to surround the opening. | 03-28-2013 |
20130075037 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing gas supplying unit for supplying a desired processing gas to a processing space between an upper electrode and a lower electrode which are disposed facing each other in an evacuable processing chamber. The plasma processing apparatus further includes a radio frequency (RF) power supply unit for applying an RF power to one of the lower and the upper electrode to generate plasma of the processing gas by RF discharge and an electrically conductive RF ground member which covers a peripheral portion of the electrode to which the RF power is applied to receive RF power emitted outwardly in radial directions from the periphery portion of the electrode to which the RF power is applied and send the received RF power to a ground line. | 03-28-2013 |
20130075248 | ETCHING METHOD, ETCHING APPARATUS, AND STORAGE MEDIUM - Art etching method for anisotropically etching a Cu film on a substrate surface includes providing a substrate having a Cu film on a surface thereof in a chamber and supplying an organic compound into the chamber while setting the inside ox the chamber to a vacuum state and irradiating an oxygen gas cluster ion beam to the Cu film. The etching method further includes oxidizing Cu or the Cu film to a copper oxide by oxygen gas cluster ions in the oxygen gas cluster ion beam and anisotropically etching the Cu film by reacting the copper oxide and the organic compound. | 03-28-2013 |
20130078061 | SUBSTRATE TREATMENT SYSTEM, SUBSTRATE TRANSFER METHOD AND NON-TRANSITORY COMPUTER-READABLE STORAGE MEDIUM - A substrate treatment system comprise a treatment station having a plurality of treatment units provided at multiple tiers in an up-down direction, a cassette mounting table on which a cassette housing a plurality of wafers W is mounted, and a wafer transfer mechanism arranged between the treatment station and the cassette mounting table, wherein a delivery block in which a plurality of delivery units are provided at multiple tiers is provided between the treatment station and the wafer transfer mechanism, the delivery units temporarily housing a wafer to be transferred between the cassette mounting table and the treatment station and a wafer to be transferred between the tiers of the treatment units. The wafer transfer mechanism includes a first transfer arm that transfers a wafer between the cassette mounting table and the delivery block, and a second transfer arm that transfers a wafer between the tiers of the delivery units. | 03-28-2013 |
20130081297 | SUBSTRATE PROCESSING APPARATUS - Provided is substrate processing apparatus including processing chamber that dries substrate W using high temperature and high pressure fluid, raw material accommodating unit that accommodates raw material in liquid state, and supplying unit that supplies the high temperature and high pressure fluid to the processing chamber. The supplying unit includes sealable outer vessel connected to the processing chamber and the raw material accommodating unit, and inner vessel provided within the outer vessel and configured to receive the raw material. The inner vessel is provided with opened holes portions configured to drop down the raw material toward a portion of the outer vessel to be heated. After the raw material is accommodated in the inner vessel, the raw material is contacted with the portion to be heated and then heated. A high temperature and high pressure fluid is then obtained and supplied to the processing chamber. | 04-04-2013 |
20130081761 | RADICAL PASSING DEVICE AND SUBSTRATE PROCESSING APPARATUS - A radical passing device can selectively pass only radicals from plasma securely. In a chamber | 04-04-2013 |
20130081763 | CEILING PLATE AND PLASMA PROCESS APPARATUS - A ceiling plate provided at a ceiling portion of a process chamber that may be evacuated to a vacuum is disclosed. The ceiling plate allows microwaves emitted from a slot of a planar antenna member provided along with the ceiling plate to pass through the ceiling plate into the process chamber, and includes plural protrusion portions arranged along a circle in a surface of the ceiling plate so as to form plural radially disposed virtual convex portions in a place between the concave portions, the surface facing toward an inside of the process chamber. A thickness of places where the concave portions are formed in the ceiling plate and another thickness of other places where the concave portions are not formed in the ceiling plate are determined so that the number of propagation modes of microwaves is different. | 04-04-2013 |
20130088696 | SETTING METHOD OF EXPOSURE APPARATUS, SUBSTRATE IMAGING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE STORAGE MEDIUM - A method of setting an exposure apparatus to expose exposure sectors defined on a resist film formed on a surface of a substrate with proper values of an exposure amount and a focus value for forming a pattern having a predetermined dimension includes exposing and developing an exposure sector defined on a reference substrate by a first exposure apparatus having a first state, and imaging the same. The method exposes and develops exposure sectors defined on an inspection substrate by a second exposure apparatus having a second state where at least one of the exposure amount and the focus value is unknown, and forms and images a pattern on the inspection substrate. The method determines the proper values for the exposure amount and the focus value for the second state based on luminance of the exposure sector of reference data and luminances of the exposure sectors of inspection data. | 04-11-2013 |
20130092195 | LIQUID PROCESSING APPARATUS, LIQUID PROCESSING METHOD AND STORAGE MEDIUM - Disclosed are a liquid processing device, and a liquid processing method. The liquid processing method includes a first process that includes supplying a first processing liquid to the substrate and discharging the first processing liquid within the processing space from a first discharge path, a second process that includes supplying a second processing liquid to the substrate and discharging the second processing liquid within the processing space from the second discharge path, and after stop supplying of the first processing liquid and prior to beginning of the second process, a nozzle switching operation switching from the first nozzle to the second nozzle and a discharge mechanism switching operation switching from the first discharge path to the second discharge path are performed. A longer one of a time to switch the nozzle and a time to switch the discharge mechanism is determined as a maximum preparation time and the switching operations begin at an earlier time than the completion time of the first process by the maximum preparation time or more. | 04-18-2013 |
20130092264 | FLOW RATE CONTROLLER AND PROCESSING APPARATUS - The flow rate controller controlling a flow rate of gas supplied through a gas passage includes: a main gas pipe; a flow rate detecting unit detecting the flow rate of gas supplied through the main gas pipe and outputting a flow rate signal; a flow rate control valve mechanism controlling a flow rate; a conversion data storage unit storing a plurality of pieces of conversion data corresponding to a plurality of gaseous species, to indicate a relationship between a flow rate instruction signal input from outside and a target flow rate; and a flow rate control main body which selects the corresponding conversion data from the conversion data based on a gaseous species selection signal input from outside, calculates the target flow rate based on the flow rate instruction signal, and controls the flow rate control valve mechanism based on the target flow rate and the flow rate signal. | 04-18-2013 |
20130093446 | SUPPORT BODY FOR CONTACT TERMINALS AND PROBE CARD - A support body for a plurality of contact terminals included in a probe card for inspecting semiconductor devices formed in a semiconductor substrate is provided. | 04-18-2013 |
20130098868 | DRY ETCHING METHOD FOR METAL FILM - A method for performing dry etching on a metal film containing Pt via a mask layer includes performing dry etching on the metal film by generating a plasma of an etching gas including a gaseous mixture of H | 04-25-2013 |
20130099813 | CONTACT TERMINAL FOR A PROBE CARD, AND THE PROBE CARD - A contact terminal for a probe card includes a cylindrical main body. The main body includes a pillar-shaped central portion formed of a first material and an outer housing which is formed of a second material and covers a lateral surface of the central portion, and hardness and resistivity of the second material are different from hardness and resistivity of the first material. The hardness of the second material is higher than that of the first material and the resistivity of the first material is lower than that of the second material, or the hardness of the first material is higher than that of the second material and the resistivity of the second material is lower than that of the first material. | 04-25-2013 |
20130112223 | SUBSTRATE TREATMENT SYSTEM, SUBSTRATE TRANSFER METHOD, AND A NON-TRANSITORY COMPUTER STORAGE MEDIUM - In a coating and developing treatment system including a treatment station and an interface station, the interface station has: a cleaning unit cleaning a rear surface of a wafer before the wafer is transferred into an exposure apparatus; an inspection unit inspecting whether the cleaned wafer is in an exposable state; and a wafer transfer mechanism including an arm transferring the wafer between the cleaning unit and the inspection unit. Each of the cleaning unit and the inspection unit is provided at multiple tiers in an up and down direction on the front side in the interface station, and the wafer transfer mechanism is provided in a region adjacent to the cleaning units and the inspection units. | 05-09-2013 |
20130112224 | SUBSTRATE TREATMENT SYSTEM, SUBSTRATE TRANSFER METHOD AND COMPUTER STORAGE MEDIUM - An interface station of a coating and developing treatment system has: a cleaning unit cleaning at least a rear surface of a wafer before the wafer is transferred into an exposure apparatus; an inspection unit inspecting the rear surface of the cleaned wafer whether the wafer is exposable, before it is transferred into the exposure apparatus; wafer transfer mechanisms including arms transferring the wafer between the units and a wafer transfer control part controlling operations of the wafer transfer mechanisms. When it is determined that a state of the wafer becomes an exposable state by re-cleaning in the cleaning unit as a result of the inspection, the wafer transfer control part controls the wafer transfer mechanisms to transfer the wafer again to the cleaning unit. | 05-09-2013 |
20130112337 | SHOWER PLATE, MANUFACTURING METHOD OF THE SHOWER PLATE, AND PLASMA PROCESSING APPARATUS USING THE SHOWER PLATE - A manufacturing method of a shower plate includes inserting a green body, a degreasing body, a temporary sintered body or a sintered body of a ceramic member, which has a plurality of gas discharge holes or gas flow holes, into a longitudinal hole of a green body, a degreasing body or a temporary sintered body of the shower plate, which has been formed by power ingredients; and sintering them simultaneously. | 05-09-2013 |
20130112352 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes: a processing chamber produced from a metal; a susceptor configured to mount a substrate; an electromagnetic wave source that supplies an electromagnetic wave; one or more dielectric member provided at an inner wall of the processing chamber, and configured to transmit the electromagnetic wave into an inside of the processing chamber; one or more metal electrode, wherein each metal electrode is installed on a bottom surface of each dielectric member such that a part of the each dielectric member is exposed to the inside of the processing chamber; and a surface wave propagating section which is a metal surface facing the susceptor, the surface wave propagating section being installed adjacent to the dielectric member and being exposed to the inside of the processing chamber. The surface wave propagating section and a bottom surface of the metal electrode are positioned on the same plane. | 05-09-2013 |
20130112628 | TREATMENT SOLUTION SUPPLY METHOD, NON-TRANSITORY COMPUTER STORAGE MEDIUM AND TREATMENT SOLUTION SUPPLY APPARATUS - A treatment solution supply method of the present invention is for supplying a treatment solution from a treatment solution supply source to a treatment solution supply unit supplying the treatment solution to a substrate, wherein a supply pipe connected to the treatment solution supply unit is provided with a filter collecting foreign matter in the treatment solution and not allowing the foreign matter to be released therefrom, and the treatment solution flowing in the supply pipe is caused to pass through the filter in a reciprocation manner at least one time and then supplied to the treatment solution supply unit, so that the foreign matter in the treatment solution can be sufficiently removed and the collected foreign matter never mixes again into the treatment solution. | 05-09-2013 |
20130115367 | METHOD FOR FORMING RUTHENIUM OXIDE FILM - A method for forming a ruthenium oxide film includes: providing a substrate in a processing chamber; supplying a ruthenium compound having a structure of the following formula (1) in which two β-diketons and two groups selected among olefin, amine, nitril, and carbonyl are coordinate-bonded to Ru in a vapor state onto the substrate; supplying oxygen gas onto the substrate; and forming a ruthenium oxide film on the substrate by reaction between the ruthenium compound gas and the oxygen gas. | 05-09-2013 |
20130115781 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a flow splitter for dividing a common gas into two common gas streams of common gas branch lines. A central introduction portion connected to one of the common gas branch lines supplies a common gas to a central portion of a substrate to be processed. A peripheral introducing portion connected to the other one of the common gas branch lines supplies the common gas to a peripheral portion of the substrate. The peripheral introducing portion has peripheral inlets arranged about a circumferential region above the substrate. An additive gas line is connected to an additive gas source to add an additive gas to at least one of the common gas branch lines. In addition, an electron temperature of a plasma in a region where the peripheral inlets are disposed is lower than that in a region where the introduction portion is disposed. | 05-09-2013 |
20130118530 | CLEANING APPARATUS, SEPARATION SYSTEM AND CLEANING METHOD - The present disclosure provides a cleaning apparatus that includes a wafer holding unit configured to hold and rotate a target wafer W, and a cleaning jig with a supplying surface that covers a joint surface of the target wafer W. The cleaning jig is provided with a gas-liquid supplying unit configured to supply a solvent of an adhesive, a rinse liquid of the solvent and an inert gas into a gap between the joint surface and the supplying surface. The cleaning jig is also provided with a suction unit configured to suck the solvent or rinse liquid (mixed liquid) which is supplied to the gap between the joint surface and the supplying surface, and a gas supplying unit configured to supply gas to a step portion. | 05-16-2013 |
20130118688 | ETCHING APPARATUS - When a substrate is etched by using a processing gas including a first gas containing halogen and carbon and having a carbon number of two or less per molecule, while supplying the processing gas toward the substrate independently from a central and a peripheral portion of a gas supply unit, which face the central and the periphery part of the substrate respectively, the processing gas is supplied such that a gas flow rate is greater in the central portion than in the peripheral portion. When the substrate is etched by using a processing gas including a second gas containing halogen and carbon and having a carbon number of three or more per molecule, the processing gas is supplied such that a gas flow rate is greater in the peripheral portion than in the central portion. | 05-16-2013 |
20130119854 | RADIO FREQUENCY (RF) POWER COUPLING SYSTEM UTILIZING MULTIPLE RF POWER COUPLING ELEMENTS FOR CONTROL OF PLASMA PROPERTIES - A radio frequency (RF) power coupling system is provided. The system has an RF electrode configured to couple RF power to plasma in a plasma processing system, multiple power coupling elements configured to electrically couple RF power at multiple power coupling locations on the RF electrode, and an RF power system coupled to the multiple power coupling elements, and configured to couple an RF power signal to each of the multiple power coupling elements. The multiple power coupling elements include a center element located at the center of the RF electrode and peripheral elements located off-center from the center of the RF electrode. A first peripheral RF power signal differs from a second peripheral RF power signal in phase. | 05-16-2013 |
20130119863 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a high frequency power supply configured to generate a high frequency power; a plasma generation electrode configured to generate the plasma by the high frequency power supplied from the high frequency power supply; a single matching unit provided between the high frequency power supply and the plasma generation electrode, and configured to match an impedance of a transmission path and an impedance of a load; | 05-16-2013 |
20130122429 | PATTERN FORMING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A disclosed manufacturing method of a semiconductor device includes laminating a substrate, an etched film, an anti-reflective coating film, and a resist film; forming a pattern made of the resist film using a photolithographic technique; forming the third mask pattern array by a mask pattern forming method; and a seventh step of forming a fourth mask pattern array by processing the etched film using the third mask pattern array. | 05-16-2013 |
20130122714 | PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND STORAGE MEDIUM - A plasma processing apparatus includes a first radio frequency (RF) power supply unit for applying a first RF power for generating a plasma from a processing gas to at least one of a first and a second electrode which are disposed facing each other in an evacuable processing chamber. The first RF power supply unit is controlled by a control unit so that a first phase at which the first RF power has a first amplitude for generating a plasma and a second phase at which the first RF power has a second amplitude for generating substantially no plasma are alternately repeated at predetermined intervals. | 05-16-2013 |
20130122718 | FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND STORAGE MEDIUM - A disclosed film deposition apparatus includes a turntable including a substrate receiving area; a first reaction gas supplier for supplying a first reaction gas to a surface of the turntable having the substrate receiving area; a second reaction gas supplier, arranged away from the first reaction gas supplier along a circumferential direction of the turntable, for supplying a second reaction gas to the surface; a separation area located along the circumferential direction between a first process area of the first reaction gas and a second process area of the second reaction gas; a separation gas supplier for supplying a first separation gas to both sides of the separation area; a first heating unit for heating the first separation gas to the separation gas supplier; an evacuation opening for evacuating the gases supplied to the turntable; and a driver for rotating the turntable in the circumferential direction. | 05-16-2013 |
20130125931 | LIQUID PROCESSING APPARATUS AND LIQUID PROCESSING METHOD - Disclosed is a liquid processing apparatus capable of performing a liquid processing and a drying processing in a position each having a different height. The liquid processing apparatus includes: a substrate holding unit configured to hold a substrate; a rotation driving unit configured to rotate the substrate holding unit; a substrate holding unit elevating member configured to lift and lower the substrate holding unit; a processing liquid supply unit configured to supply a processing liquid to the substrate; a liquid receiving cup configured to surround the substrate when the processing liquid is being supplied to the substrate; a drying cup located above the substrate and the liquid receiving cup when the processing liquid is being supplied to the substrate. The drying cup surrounds the substrate and located above the liquid receiving cup when the substrate is being dried. | 05-23-2013 |
20130126001 | PROCESSING METHOD - A processing method performs a predetermined process to an object by supplying a process gas at a prescribed flow rate into a process container to which a gas supply unit and an exhaust system are connected. The processing method includes a first process of setting the gas supply unit to supply a process gas at a flow rate greater than the prescribed flow rate of a predetermined process for a predetermined short time from a gas channel while exhausting an atmosphere in the process container through the exhaust system; and a second process of setting the gas supply unit to supply the process gas at the prescribed flow rate from the gas channel after the first process is completed. | 05-23-2013 |
20130126939 | SEALING FILM FORMING METHOD, SEALING FILM FORMING DEVICE, AND LIGHT-EMITTING DEVICE - A sealing film forming method is capable of forming a sealing film having high moisture permeability resistance in a shorter time and at lower cost. The sealing film forming method for forming a sealing film | 05-23-2013 |
20130128275 | INTERFERENCE OPTICAL SYSTEM, SUBSTRATE PROCESSING APPARATUS, AND MEASURING METHOD - The interference optical system includes a light source, a collimator, a light-receiving element, a tunable filter, and a calculation apparatus. The collimator emits measuring light from the light source to a first main surface of the object, and receives reflected light from the first main surface and a second main surface. The light-receiving element acquires an intensity of light from the collimator. The tunable filter sweeps a wavelength of the light incident to the light-receiving element. The calculation apparatus measures an interference intensity distribution that has wavelength dependence and is an intensity distribution of the reflected light from the first main surface and the second main surface, and measures the thickness or the temperature of the object based on a waveform obtained by Fourier transforming the interference intensity distribution. | 05-23-2013 |
20130133695 | SUBSTRATE PROCESSING METHOD, STORAGE MEDIUM STORING COMPUTER PROGRAM FOR IMPLEMENTING SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A chemical liquid process is performed on a substrate. Then, a rinse process that supplies a rinse liquid to the substrate is performed. Thereafter, a drying process that dries the substrate is performed while rotating the substrate. The drying process includes a first drying process that rotates the substrate at a first rotational speed; a second drying process that decreases the rotational speed of the substrate to a second rotational speed lower than the first rotational speed after the first drying process. In the second drying process, the rinse liquid and a drying solution are agitated and substituted while generating braking effect. In a third drying process, the rotational speed of the substrate is increased from the second rotational speed to a third rotational speed after the second drying process. Thereafter, in a fourth drying process, the drying solution on the substrate is scattered away by rotating the substrate. | 05-30-2013 |
20130133703 | VAPORIZED MATERIAL SUPPLY APPARATUS, SUBSTRATE PROCESSING APPARATUS HAVING SAME AND VAPORIZED MATERIAL SUPPLY METHOD - A vaporized material supply apparatus includes: a storage tank for storing a liquid material; a first temperature controller for controlling the storage tank to be at a first temperature; a carrier gas inlet line for introducing a carrier gas into the storage tank; a processing gas outlet line for discharging a processing gas out of the storage tank; a container having an inlet port connecting to the processing gas outlet line and an outlet port via which the processing gas is discharged; an interference member to interfere with flow of the processing gas in the container; and a second temperature controller for controlling the container to be at a second temperature lower than the first temperature. | 05-30-2013 |
20130133828 | BONDING APPARATUS, BONDING SYSTEM AND BONDING METHOD - A bonding apparatus for bonding a substrate to be processed and a support substrate including, a first holding unit which holds the substrate to be processed, a second holding unit disposed to face the first holding unit and configured to hold the support substrate, a pressurizing mechanism including a vertically-expansible pressure vessel which is installed to cover the substrate to be processed held by the first holding unit and the support substrate held by the second holding unit, the pressurizing mechanism being installed in any one of the first holding unit and the second holding unit and configured to flow air into the pressure vessel and press the second holding unit and the first holding unit towards each other, an internally-sealable processing vessel which receives the first holding unit, the second holding unit and the pressure vessel, and a depressurization mechanism which depressurizes an internal atmosphere of the processing vessel. | 05-30-2013 |
20130134041 | DROPLET MOVING DEVICE, DROPLET MOVING METHOD, PLASMA SEPARATION DEVICE, AND PLASMA SEPARATION METHOD - A droplet can be moved along a surface of a moving surface forming member in a simple method. At both sides of the moving surface forming member | 05-30-2013 |
20130137262 | TUNGSTEN FILM FORMING METHOD - A tungsten film forming method for forming a tungsten film on a surface of a substrate while heating the substrate in a depressurized atmosphere in a processing chamber includes forming an initial tungsten film for tungsten nucleation on the surface of the substrate by alternately repeating a supply of WF | 05-30-2013 |
20130145643 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus according to the present invention is provided with a spin chuck ( | 06-13-2013 |
20130146228 | SEPARATION APPARATUS, SEPARATION SYSTEM, AND SEPARATION METHOD - A separation apparatus for separating a superposed substrate in which a processing target substrate and a supporting substrate are joined together with an adhesive, into the processing target substrate and the supporting substrate, includes: a first holding unit which holds the processing target substrate; a second holding unit which holds the supporting substrate; a moving mechanism which relatively moves the first holding unit or the second holding unit in a horizontal direction; a load measurement unit which measures a load acting on the processing target substrate and the supporting substrate when the processing target substrate and the supporting substrate are separated; and a control unit which controls the moving mechanism based on the load measured by the load measurement unit. | 06-13-2013 |
20130147506 | WAFER INSPECTION INTERFACE AND WAFER INSPECTION APPARATUS - The wafer inspection interface | 06-13-2013 |
20130148817 | ABNORMALITY DETECTION APPARATUS FOR PERIODIC DRIVING SYSTEM, PROCESSING APPARATUS INCLUDING PERIODIC DRIVING SYSTEM, ABNORMALITY DETECTION METHOD FOR PERIODIC DRIVING SYSTEM, AND COMPUTER PROGRAM - An abnormality detection apparatus for a periodic driving system includes a detection unit; a data obtaining unit for time series data from the detected sound; a determinism derivation unit configured to derive a plurality of values representing determinism providing an indicator of whether the time series data is deterministic or stochastic or a plurality of intermediate variations in a calculation process of the values representing determinism at a predetermined interval from the time series data; a probability distribution calculation unit. The abnormality detection apparatus further includes a determination unit configured to determine existence or non-existence of abnormality in the periodic driving system based on the probability distribution of the values representing determinism or the intermediate variations. | 06-13-2013 |
20130149867 | SUBSTRATE PROCESSING SYSTEM, GAS SUPPLY UNIT, METHOD OF SUBSTRATE PROCESSING, COMPUTER PROGRAM, AND STORAGE MEDIUM - The present invention is to provide a technique for uniformly processing a substrate surface in the process of processing a substrate by supplying a gas. The inside of a shower head having gas-jetting pores for supplying a gas to a substrate is partitioned into a center section from which a gas is supplied to the center portion of a substrate, and a peripheral section from which a gas is supplied to the peripheral portion of the substrate, and the same process gas is supplied to the substrate from these two sections at flow rates separately regulated. The distance from the center of the center section of the gas supply unit to the outermost gas-jetting pores in the center section is set 53% or more of the radius of the substrate. Moreover, an additional gas is further supplied to the peripheral portion of the substrate. | 06-13-2013 |
20130151447 | METHOD AND APPARATUS FOR SELF-LEARNING AND SELF-IMPROVING A SEMICONDUCTOR MANUFACTURING TOOL - Performance of a manufacturing tool is optimized. Optimization relies on recipe drifting and generation of knowledge that capture relationships among product output metrics and input material measurement(s) and recipe parameters. Optimized recipe parameters are extracted from a basis of learned functions that predict output metrics for a current state of the manufacturing tool and measurements of input material(s). Drifting and learning are related and lead to dynamic optimization of tool performance, which enables optimized output from the manufacturing tool as the operation conditions of the tool changes. Features of recipe drifting and associated learning can be autonomously or externally configured through suitable user interfaces, which also can be drifted to optimize end-user interaction. | 06-13-2013 |
20130152964 | SUBSTRATE CLEANING METHOD, SUBSTRATE CLEANING SYSTEM AND PROGRAM STORAGE MEDIUM - The present invention provides a substrate cleaning method capable of removing particles from the entire surface of a substrate to be processed at a high removing efficiency. In the substrate cleaning method according to the present invention, a substrate to be processed W is immersed in a cleaning liquid in a cleaning tank | 06-20-2013 |
20130152976 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND STORAGE MEDIUM - Provided is a substrate processing apparatus including a substrate holding unit configured to hold a wafer W horizontally, a rotation driving unit configured to rotate the substrate holding unit, a first chemical liquid nozzle configured to discharge a first chemical liquid to a first chemical liquid supplying position on the peripheral portion of the wafer W, and a second chemical liquid nozzle configured to discharge a second chemical liquid to a second chemical liquid supplying position on the peripheral portion of the wafer W. The rotation driving unit rotates the substrate holding unit in a first rotation direction when the first chemical liquid nozzle discharges the first chemical liquid, and rotates the substrate holding unit in a second rotation direction when the second chemical liquid nozzle discharges the second chemical liquid. | 06-20-2013 |
20130153147 | DECHUCK CONTROL METHOD AND PLASMA PROCESSING APPARATUS - A dechuck control method includes performing a discharge process by introducing an inert gas into a processing chamber and maintaining the pressure within the processing chamber at a first pressure; monitoring the pressure of a heat transmitting gas supplied to the processing object rear face and/or the leakage flow rate of the heat transmitting gas; obtaining the amount and polarity of the residual electric charge of the electrostatic chuck surface and applying a voltage for supplying an electric charge that is of the same amount as the residual electric charge but of the opposite polarity to a chuck electrode; evacuating the inert gas from the processing chamber while applying the voltage to the chuck electrode and reducing the pressure within the processing chamber to a second pressure; and turning off the voltage applied to the electrostatic chuck and dechucking the processing object from the electrostatic chuck. | 06-20-2013 |
20130154059 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE - A semiconductor device manufacturing method includes exciting plasma, applying RF power onto a target substrate to generate substrate bias and performing an ion implantation plural times by applying the RF power in the form of pulses. | 06-20-2013 |
20130156948 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND STORAGE MEDIUM - A substrate processing apparatus includes substrate holding unit that holds wafer W horizontally, rotation driving unit that rotates the substrate holding unit, first chemical liquid nozzle that discharges first chemical liquid toward the peripheral portion of wafer W, second chemical liquid nozzle that discharges second chemical liquid, which is different from the first chemical liquid, toward the peripheral portion of wafer, and first nozzle driving unit and second nozzle driving unit each moves the first chemical liquid nozzle and the second chemical liquid nozzle, respectively. Each chemical liquid nozzle is moved by each nozzle driving unit between processing position disposed when a chemical liquid is discharged toward the peripheral portion of wafer W, and stand-by position disposed when the chemical liquid is not discharged. Each stand-by position is disposed in the center side of wafer W compared to the processing position. | 06-20-2013 |
20130162142 | PLASMA PROCESSING APPARATUS AND METHOD - A plasma processing apparatus includes a processing chamber; a lower electrode serving as a mounting table for mounting thereon a target object; and an upper electrode or an antenna electrode provided to be opposite to the lower electrode. The apparatus further includes a gas supply source for introducing a gas including a halogen-containing gas and an oxygen gas into the processing chamber and a high frequency power supply for applying a high frequency power for generating plasma to at least one of the upper electrode, the antenna electrode, or the lower electrode. Among inner surfaces of the processing chamber which are exposed to the plasma, at least a part of or all of the surfaces between a mounting position of the target object and the upper electrode, or the antenna electrode; or at least a part of or all of the surfaces of the upper electrode or the antenna electrode are coated with a fluorinated compound. | 06-27-2013 |
20130164936 | FILM DEPOSITION METHOD - A film deposition method includes a film depositing step of depositing titanium nitride on a substrate mounted on a substrate mounting portion of a turntable, which is rotatably provided in a vacuum chamber, by alternately exposing the substrate to a titanium containing gas and a nitrogen containing gas which is capable of reacting with the titanium containing gas while rotating the turntable; and an exposing step of exposing the substrate on which the titanium nitride is deposited to the nitrogen containing gas, the film depositing step and the exposing step being continuously repeated to deposit the titanium nitride of a desired thickness. | 06-27-2013 |
20130164942 | FILM DEPOSITION METHOD - A film deposition method, in which a film of a reaction product of a first reaction gas, which tends to be adsorbed onto hydroxyl radicals, and a second reaction gas capable of reacting with the first reaction gas is formed on a substrate provided with a concave portion, includes a step of controlling an adsorption distribution of the hydroxyl radicals in a depth direction in the concave portion of the substrate; a step of supplying the first reaction gas on the substrate onto which the hydroxyl radicals are adsorbed; and a step of supplying the second reaction gas on the substrate onto which the first reaction gas is adsorbed. | 06-27-2013 |
20130164945 | FILM DEPOSITION METHOD - A film deposition method includes an adsorption step of adsorbing a first reaction gas onto a substrate by supplying the first reaction gas from a first gas supplying portion for a predetermined period without supplying a reaction gas from a second gas supplying portion while separating a first process area and a second process area by supplying a separation gas from a separation gas supplying portion and rotating a turntable; and a reaction step of having the first reaction gas adsorbed onto the substrate react with a second reaction gas by supplying the second reaction gas from the second gas supplying portion for a predetermined period without supplying a reaction gas from the first gas supplying portion while separating the first process area and the second process area by supplying the separation gas from the separation gas supplying portion and rotating the turntable. | 06-27-2013 |
20130164946 | METHOD OF FORMING SILICON OXYCARBONITRIDE FILM - The method of forming a silicon oxycarbonitride film on a base includes stacking a silicon carbonitride film and a silicon oxynitride film on the base to form the silicon oxycarbonitride film. | 06-27-2013 |
20130166064 | TRANSFER APPARATUS AND TRANSFER METHOD - A transfer apparatus for mounting and transferring a transferred component on a driven means, the transfer apparatus includes: a driving means for rotating a driving side pulley by a rotational driving force of a motor to move a belt wound around the driving side pulley, thereby moving the driven means coupled to the belt in a predetermined direction; and a transfer monitoring means for monitoring a transfer state of the driven means, wherein the transfer monitoring means detects a torque value of the motor required to move the driven means, calculates a torque differential value of the torque value with respect to time based on the detected torque value, and detects the transfer state using the calculated torque differential value. | 06-27-2013 |
20130167936 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND NON-TRANSITORY STORAGE MEDIUM - There is provided a substrate processing apparatus to perform a predetermined process on a substrate on which a pattern mask is formed, comprising a compartment mechanism configured to switch between a compartmented state and an open state. The compartmented state includes a first section having the evaporation source formation part, and a second section configured to transfer the substrate between an outside of processing vessel and a mounting table. The substrate processing apparatus comprises a substrate transfer hole formed in the processing vessel and configured to open and close with respect to the second section being in the compartmented state; and an exhaust hole formed to connect to the second section and configured to exhaust the second section in the compartment state to remove a solvent atmosphere of the second section. | 07-04-2013 |
20130168369 | COOLING BLOCK FORMING ELECTRODE - The present invention is a cooling block that forms an electrode for generating a plasma for use in a plasma process, and includes a channel for a cooling liquid, the cooling block comprising: a first base material and a second base material respectively made of aluminum, at least one of the first and second base materials having a recess for forming a channel for a cooling liquid; and a diffusion bonding layer, in which zinc is diffused in aluminum, and an anti-corrosion layer of a zinc oxide film, the layers being formed by interposing zinc between the first and second base materials, and by bonding the first and second base materials with zinc interposed therebetween in a heating atmosphere containing oxygen. | 07-04-2013 |
20130168389 | MICROWAVE HEATING APPARATUS AND PROCESSING METHOD - Four microwave introduction ports are arranged to deviate from directly above a wafer in such a way that the long sides thereof are in parallel to at least one of the four straight sides. The top surface of a rectifying plate which surrounds the wafer is inclined so as to be widened from the side of the wafer (inner side) toward the side of a sidewall portion (outer side) to form an inclined portion. The inclined portion is disposed to face the four microwave introduction ports in a vertical direction. | 07-04-2013 |
20130168390 | MICROWAVE HEATING APPARATUS AND PROCESSING METHOD - In the microwave heating apparatus, four microwave introduction ports are arranged at positions spaced apart from each other at an angle of about 90° in a ceiling portion of a processing chamber in such a way that the long sides and the short sides thereof are in parallel to inner surfaces of four sidewalls. The microwave introduction port are disposed in such a way that each of the microwave introduction ports are not overlapped with another microwave introduction port whose long sides are in parallel to the long sides of the corresponding microwave introduction port when the corresponding microwave introduction port is moved in translation in a direction perpendicular to the long sides thereof. | 07-04-2013 |
20130171831 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A substrate processing apparatus includes a substrate holding unit configured to hold a substrate; a first processing liquid nozzle configured to supply a first processing liquid to a peripheral portion of the substrate; a second processing liquid nozzle configured to supply a second processing liquid, the temperature of which is lower than that of the first processing liquid, to the peripheral portion of the substrate; a first gas supply port configured to supply a first gas at a first temperature to a first gas supplied place on the peripheral portion of the substrate; and a second gas supply port configured to supply a second gas at a second temperature lower than the first temperature to a place closer to the center in the radial direction as compared to the first gas supplied place with respect to the substrate. | 07-04-2013 |
20130174873 | SUBSTRATE CLEANING METHOD, SUBSTRATE CLEANING APPARATUS AND STORAGE MEDIUM FOR CLEANING SUBSTRATE - A substrate cleaning method is capable of preventing a liquid stream on a substrate from being cut and circuit patterns thereon from being damaged. The substrate cleaning method includes a liquid film forming process that forms a liquid film on an entire substrate surface by supplying a cleaning liquid L from a central portion of the substrate W toward a peripheral portion thereof while rotating the substrate; a drying region forming process that discharges a gas G on the substrate surface and removes the cleaning liquid on the substrate surface; and a residual liquid removing process that removes the cleaning liquid remaining between the circuit patterns by discharging a gas G while moving in a diametrical direction of the substrate. | 07-11-2013 |
20130174983 | PLASMA PROCESSOR AND PLASMA PROCESSING METHOD - An etching chamber | 07-11-2013 |
20130180452 | FILM DEPOSITION APPARATUS - A film deposition apparatus deposits a thin film on a substrate by repeating a cycle of supplying plural kinds of process gases that react with each other in a vacuum chamber. The film deposition apparatus includes a turntable to hold a substrate thereon and to rotate the substrate, and a plurality of process gas supplying parts. At least one of the process gas supplying parts extends from the center to the periphery and is formed as a gas nozzle including gas discharge holes. | 07-18-2013 |
20130181040 | SEMICONDUCTOR DEVICE MANUFACTURING SYSTEM AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - Provided is a semiconductor device manufacturing system according to the present disclosure which manufactures a semiconductor device using a chip stack. The system includes a chip reducing apparatus and a chip bonding apparatus, the chip reducing apparatus includes a reduction chamber, an oxide film of the surface of the terminal of each chip is reduced in the reduction chamber, the chip bonding apparatus includes a reflow chamber isolated from the reduction chamber, a solder ball is bonded to the terminal of each chip in the reflow chamber, and the chip bonding apparatus is installed separately from the chip reducing apparatus. | 07-18-2013 |
20130183443 | PROCESSING APPARATUS AND VALVE OPERATION CHECKING METHOD - A processing apparatus includes a processing chamber configured to accommodate a target object to be processed, gas supply paths provided in a corresponding relationship with the kinds of process gases supplied into the processing chamber, and valves respectively arranged in the gas supply paths to open and close the gas supply paths. The processing apparatus further includes valve drive units configured to independently drive the valves, sensor units configured to independently monitor opening and closing operations of the valves, and a control unit configured to determine operation statuses of the valves based on valve opening and closing drive signals transmitted to the valve drive units and/or valve opening and closing detection signals transmitted from the sensor units. | 07-18-2013 |
20130186332 | PROCESSING APPARATUS AND PROCESS STATUS CHECKING METHOD - A processing apparatus includes a processing chamber, gas supply paths provided in a corresponding relationship with the kinds of process gases supplied into the processing chamber, and valves respectively arranged in the gas supply paths. The apparatus further includes a measuring unit for measuring a physical parameter associated with each of the process gases passing through the gas supply paths, a register unit which stores the physical parameter, and a control unit configured to determine a process status based on the physical parameter stored in the register unit. The register unit is provided in a lower-hierarchy control device connected to the control unit of a higher hierarchy to transmit and receive signals to and from the control unit. The lower-hierarchy control device is configured to control input and output signals between the control unit and end devices under the control of the control unit. | 07-25-2013 |
20130186743 | MAGNETRON SPUTTERING APPARATUS AND FILM FORMING METHOD - A target is provided opposite to a wafer mounted on in a vacuum chamber, and a magnet array body is disposed above the target. In the magnet array body, ring-shaped magnet arrays are arranged to generate annular magnetic fields in the circumferential direction of the wafer, and a sputtering film formation is performed by switching between the magnetic fields. | 07-25-2013 |
20130186878 | HEAT TREATMENT APPARATUS AND METHOD OF CONTROLLING THE SAME - The heat treatment apparatus includes: a processing chamber which accommodates a processing object; a heating unit which heats the processing object accommodated in the processing chamber; a temperature detecting unit which detects an internal temperature of the processing chamber; and a controller which sets a second setting temperature identical to as a temperature detected by the temperature detecting unit when the temperature detected by the temperature detecting unit falls below a predetermined first setting temperature due to an external disturbance; controls the heating unit so that a third setting temperature between the second setting temperature and the first setting temperature becomes identical to the temperature detected by the temperature detecting unit; and controls the heating unit so that the first setting temperature becomes identical to the temperature detected by the temperature detecting unit after the third setting temperature becomes identical to the temperature detected by the temperature detecting unit. | 07-25-2013 |
20130188158 | RESIST COATING AND DEVELOPING APPARATUS, RESIST COATING AND DEVELOPING METHOD, RESIST-FILM PROCESSING APPARATUS, AND RESIST-FILM PROCESSING METHOD - The present invention provides a resist coating and developing apparatus, a resist coating and developing method, a resist-film processing apparatus, and a resist-film processing method, capable of reducing a line width roughness by planarizing a resist pattern. The resist coating and developing apparatus comprises: a resist-film forming part configured to coat a resist onto a substrate to form a resist film thereon; a resist developing part configured to develop the exposed resist film to obtain a patterned resist film; and a solvent-gas supply part configured to expose the resist film, which has been developed and patterned by the resist developing part, to a first solvent of a gaseous atmosphere having a solubility to the resist film. A solvent supply part supplies, to the resist film which has been exposed to the first solvent, a second solvent in a liquid state having a solubility to the resist film. | 07-25-2013 |
20130189847 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus is provided with a replacement time detecting unit, which detects the status of residual charges which attract a semiconductor wafer and detects a time when an electrostatic chuck is to be replaced, at a time when a direct voltage application from a direct current source is stopped and the semiconductor wafer is brought up from the electrostatic chuck. | 07-25-2013 |
20130189849 | PARTICLE REDUCING METHOD AND FILM DEPOSITION METHOD - A particle reducing method includes a step of supplying a first gas to a vacuum chamber in which a susceptor, formed by an insulating object and the surface of which is provided with a substrate mounting portion, is rotatably provided; a step of generating plasma from the first gas by supplying high frequency waves to a plasma generating device provided for the vacuum chamber; and a step of exposing the substrate mounting portion, on which a substrate is not mounted, to the plasma while rotating the susceptor. | 07-25-2013 |
20130189852 | LIQUID PROCESSING APPARATUS, LIQUID PROCESSING METHOD, AND STORAGE MEDIUM - A solvent such as PGMEA is coated on a wafer in advance to easily spread resist liquid onto the wafer on a spin chuck. Before coating, the solvent supplied from a solvent supply source is stored in a distill tank first, the solvent is heated by a heating unit to be evaporated, and the evaporated solvent is cooled by a cooler, thereby performing the purification of the solvent by distillation. Therefore, particles among the solvent are removed. The purified solvent is stored in a storage tank first, and then supplied to a solvent nozzle above the spin chuck from a solvent supplying line. And then, the solvent is coated on the wafer by ejecting the solvent from the solvent nozzle to the wafer. Further, the distill tank is cleaned periodically to suppress the increase of the concentration of the particles in the solvent. | 07-25-2013 |
20130192760 | MICROWAVE EMITTING DEVICE AND SURFACE WAVE PLASMA PROCESSING APPARATUS - A microwave emitting device emits a microwave generated by a microwave generation unit into a chamber in a plasma processing apparatus for performing plasma processing by generating a surface wave plasma in the chamber. The device includes: a transmission line having a tubular outer conductor and an inner conductor disposed in the outer conductor to transmit the microwave; an antenna to emit the microwave transmitted through the microwave transmission line into the chamber through slots; a dielectric member to transmit the microwave emitted from the antenna to generate a surface wave; and a DC voltage application member to apply a positive DC voltage to a plasma generation region where a surface wave plasma is generated by the surface wave. | 08-01-2013 |
20130194557 | DEVELOPING METHOD - A method of developing a substrate including rotating the substrate and supplying a developing liquid from a discharge port of a developer nozzle onto the surface of the substrate, while moving the developer nozzle, disposed above the substrate, from a central portion towards a peripheral portion of the substrate, and supplying a first rinse liquid from a discharge port of a first rinse nozzle onto the surface of the substrate, while moving the first rinse nozzle, disposed above the substrate, from the central portion towards the peripheral portion of the substrate. The supplying of the developing liquid and the first rinse liquid are performed concurrently, with the first rinse nozzle being maintained nearer to a center of the substrate than the developer nozzle. | 08-01-2013 |
20130196511 | ETCHING METHOD AND ETCHING APPARATUS - An etching method of etching a periodic pattern formed by self-assembling a first polymer and a second polymer of a block copolymer that is capable of being self-assembled, the etching method includes supplying a high frequency power which is set such that a great amount of ion energy is distributed within a range smaller than ion energy distribution at which an etching yield of the first polymer is generated and larger than or equal to ion energy distribution at which an etching yield of the second polymer is generated, and supplying a predetermined gas, generating plasma from the supplied gas by the high frequency power, and etching the periodic pattern on a processing target object by using the generated plasma. | 08-01-2013 |
20130199727 | PLASMA PROCESSING APPARATUS - Provided is a capacitively coupled plasma processing apparatus which improves a controllability of the RF bias function and reliably prevents unwanted resonance from being generated on a RF transmission line between a counter electrode and ground potential to enhance reliability of the plasma process. In the capacitive coupled type plasma processing apparatus, three kinds of RF powers from a first, second and third RF power supplies ( | 08-08-2013 |
20130200043 | ANTENNA UNIT FOR INDUCTIVELY COUPLED PLASMA, INDUCTIVELY COUPLED PLASMA PROCESSING APPARATUS AND METHOD THEREFOR - An antenna unit for inductively coupled plasma includes an antenna configured to generate an inductively coupled plasma used in processing a substrate within a processing chamber of a plasma processing apparatus, wherein the antenna includes planar sections which are formed to face the substrate and generate an induction electric field that contributes to generate the inductively coupled plasma, wherein a plurality of antenna segments having planar portions which form a portion of the planar sections are arranged to constitute the planar sections, wherein the antenna segments are constituted by winding an antenna line in a direction intersecting with the substrate in a longitudinal and spiral pattern. | 08-08-2013 |
20130200491 | METHOD OF MANUFACTURING CAPACITOR, CAPACITOR AND METHOD OF FORMING DIELECTRIC FILM FOR USE IN CAPACITOR - Provided are a method of manufacturing a capacitor capable of achieving a high dielectric constant property and a low leakage current, a capacitor, and a method of forming a dielectric film used in the capacitor. The capacitor is fabricated by forming a lower electrode layer on a substrate; forming a first TiO | 08-08-2013 |
20130202386 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND NON-TRANSITORY COMPUTER-READABLE STORAGE MEDIUM - A substrate processing apparatus includes a control unit performing loading substrates into a second unit block when a trouble occurs in a module of a first unit block; determining whether it is before a leading substrate of a next lot of the lot where a standby substrate positioned in upper stream side than the troubled module belongs is loaded into the module in the uppermost stage of the second unit block; loading the standby substrate into the module in the uppermost stage of the second unit block when determined it is before the loading of the leading substrate and loading the standby substrate into the module in the uppermost stage of the second unit block after a rearmost substrate of the next lot is loaded into the module in the uppermost stage of the second unit block when determined otherwise; and performing a series of processing on the standby substrate. | 08-08-2013 |
20130202388 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND NON-TRANSITORY STORAGE MEDIUM - There is provided a technique which can prevent poor processing of successive substrates in the event of a failure of a module or a transport mechanism for transporting a substrate between modules. A substrate processing apparatus includes: a plurality of modules from which a substrate holder of a substrate transport mechanism receives a substrate; a sensor section for detecting a displacement of the holding position of a substrate, held by the substrate holder, from a reference position preset in the substrate holder; and a storage section for storing the displacement, detected when the substrate holder receives a substrate from each of the modules, in a chronological manner for each module. A failure of one of the modules or the substrate transport mechanism is estimated based on the chronological data on the displacement for each module, stored in the storage section. This enables an early detection of a failure or abnormality. | 08-08-2013 |
20130203189 | SUBSTRATE TREATMENT APPARATUS, SUBSTRATE TREATMENT METHOD, AND NON-TRANSITORY STORAGE MEDIUM - A substrate treatment apparatus configured such that substrates in a same lot are distributed by a delivery mechanism into a plurality of unit blocks, each unit block including a solution treatment module, an ultraviolet irradiation module, and a substrate carrying mechanism, the apparatus includes: an illuminance detection part that detects an illuminance of a light source of the ultraviolet irradiation module; and a control part that controls, when an illuminance detection value of the ultraviolet irradiation module in one unit block among the plurality of unit blocks becomes a set value or less, the delivery mechanism to stop delivery of a substrate to the one unit block and deliver subsequent substrates to another unit block, and the ultraviolet irradiation module to perform irradiation on substrates which have already been delivered to the one unit block with an irradiation time adjusted to a length according to the illuminance detection value. | 08-08-2013 |
20130203261 | PLASMA TUNING RODS IN MICROWAVE RESONATOR PROCESSING SYSTEMS - A plasma tuning rod system is provided with one or more microwave cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to a plasma by generating resonant microwave energy in one or more plasma tuning rods within and/or adjacent to the plasma. One or more microwave cavity assemblies can be coupled to a process chamber, and can comprise one or more tuning spaces/cavities. Each tuning space/cavity can have one or more plasma tuning rods coupled thereto. The plasma tuning rods can be configured to couple the EM energy from the resonant cavities to the process space within the process chamber and thereby create uniform plasma within the process space. | 08-08-2013 |
20130203268 | FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD - A disclosed film deposition apparatus has a separation area arranged between a first process area and a second area as viewed from a wafer that is rotated by a turntable, and a modification area arranged between the second process area and the first process area as viewed from the wafer that is rotated by the turntable where a modification process is performed on a reaction product formed on the wafer by a plasma generating unit. Further, a protruding portion is arranged at a casing that surrounds the modification area, and the atmospheric pressure of the modification area is arranged to be higher than the atmospheric pressure of the areas adjacent to the modification area. | 08-08-2013 |
20130204416 | HEAT TREATMENT APPARATUS AND METHOD OF CONTROLLING THE SAME - The heat treatment apparatus that increases a temperature of a processing object and performs a heat treatment in a constant temperature, the heat treatment apparatus includes: a processing chamber which accommodates the processing object; a heating unit which heats the processing object accommodated in the processing chamber; a memory unit which stores two or more temperature control models that are previously created, a temperature controller which controls a temperature of the heating unit; and an apparatus controller which controls the temperature controller and the memory unit, wherein the apparatus controller selects a temperature control model among the two or more temperature control models according to desired heat treatment conditions, and wherein the temperature controller reads out the selected temperature control model from the memory unit to control the heating unit. | 08-08-2013 |
20130204421 | SUBSTRATE TRANSFER APPARATUS, SUBSTRATE TRANSFER METHOD, AND NON-TRANSITORY STORAGE MEDIUM - A substrate transfer apparatus to transfer a circular substrate provided with a cutout at an edge portion thereof, includes: a sensor part including three light source parts applying light to positions different from one another at the edge portion, and three light receiving parts paired with the light source parts; and a drive part for moving the substrate holding part, wherein the three light source parts apply light to the light receiving parts so that whether or not a detection range of the sensor part overlaps with the cutout of the substrate is determined on the basis of an amount of received light by each light receiving part, and when it is determined that there is an overlap at any position, positions of the edge portion of the substrate are further detected with the position of the substrate displaced with respect to the sensor part. | 08-08-2013 |
20130204425 | THERMAL PROCESSING APPARATUS, THERMAL PROCESSING METHOD, AND STORAGE MEDIUM - When a substrate is transferred by a holding arm to a multiple tier wafer boat, contact between the holding arm and the substrate is prevented. When the wafer boat is not subjected to a thermal effect, a normal height position of a ring member is obtained by relatively elevating and lowering a transfer base member with respect to the wafer boat. Before a wafer, which is not yet thermally processed, is transferred to the wafer boat, a height position of the corresponding ring member is obtained. By comparing a difference between the normal height position of the ring member and the height position of the ring member before the wafer is transported, with a threshold value, whether to transfer the wafer by the wafer transfer mechanism to the wafer boat can be judged. | 08-08-2013 |
20130206338 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus comprises an upper electrode | 08-15-2013 |
20130209941 | METHOD OF FORMING PATTERN - A method of forming a pattern including applying a resist composition to a substrate to form a resist film, and then subjecting the resist film to exposure and development, thereby forming a first pattern containing a resist film; forming a SiO | 08-15-2013 |