Toshio Hasegawa
Toshio Hasegawa, Tokyo JP
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20100226659 | QUANTUM COMMUNICATION APPARATUS, QUANTUM COMMUNICATION SYSTEM AND QUANTUM COMMUNICATION METHOD - The present invention is directed to realize a stable and highly-efficient quantum communication without being influenced by the jitter of the heralding signal. In regard to the quantum encryption transmitting apparatus | 09-09-2010 |
Toshio Hasegawa, Albany, NY US
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20100136230 | METHOD OF CLEANING POWDERY SOURCE SUPPLY SYSTEM, STORAGE MEDIUM, SUBSTRATE PROCESSING SYSTEM AND SUBSTRATE PROCESSING METHOD - A method of cleaning a powdery source supply system prevents outflow of particles from a chamber or an introduction line in a film forming process. A substrate processing system includes a powdery source supply system and a film forming processing unit. The powdery source supply system includes an ampoule for accommodating a powdery source, a carrier gas supply unit for supplying a carrier gas into the ampoule, an introduction line for connecting the ampoule and the film forming processing unit, a purge line branched from the introduction line, and a valve for opening or closing the introduction line. When the valve is opened and the interior of the purge line is evacuated prior to the film forming process, the carrier gas supply unit supplies a carrier gas so that the viscous force acting on particles by the carrier gas is greater than the viscous force in the film forming process. | 06-03-2010 |
20150221550 | INTEGRATION OF ALD BARRIER LAYER AND CVD Ru LINER FOR VOID-FREE Cu FILLING - Methods for integration of atomic layer deposition (ALD) of barrier layers and chemical vapor deposition (CVD) of Ru liners for Cu filling of narrow recessed features for semiconductor devices are disclosed in several embodiments. According to one embodiment, the method includes providing a substrate containing a recessed feature, depositing a conformal barrier layer by ALD in the recessed feature, where the barrier layer contains TaN or TaAlN, depositing a conformal Ru liner by CVD on the barrier layer, and filling the recessed feature with Cu metal. | 08-06-2015 |
Toshio Hasegawa, Nirasaki-Shi JP
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20100047472 | FILM FORMING METHOD - The present invention relates to a method of forming a metal-nitride film onto a surface of an object to be processed in a processing container in which a vacuum can be created. The method of the invention includes: a step of continuously supplying an inert gas into a processing container set at a high film-forming temperature; and a step of intermittently supplying a metal-source gas into the processing container, during the step of continuously supplying the inert gas. During the step of intermittently supplying the metal-source gas, a nitrogen-including reduction gas is supplied into the processing container at the same time that the metal-source gas is supplied, during a supply term of the metal-source gas. The nitrogen-including reduction gas is also supplied into the processing container for a term shorter than a non-supply term of the metal-source gas, during the non-supply term of the metal-source gas. A film thickness of the metal-nitride film formed during the one supply term of the metal-source gas is not more than 60 nm. According to the invention, although the film-forming process is conducted at a relatively high temperature, a metal-nitride film can be deposited whose chlorine density is low, whose resistivity is low, and in which fewer cracks may be generated. | 02-25-2010 |
Toshio Hasegawa, Delmar, NY US
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20080274616 | METHOD FOR DEPOSITING TITANIUM NITRIDE FILMS FOR SEMICONDUCTOR MANUFACTURING - Embodiments of the invention describe TiN deposition methods suitable for high volume manufacturing of semiconductor devices on large patterned substrates (wafers). One embodiment describes a chemical vapor deposition (CVD) process using high gas flow rate of a tetrakis(ethylmethylamino) titanium (TEMAT) precursor vapor along with an inert carrier gas at a low process chamber pressure that provides high deposition rate of conformal TiN films with good step coverage in surface reaction limited regime. Other embodiments describe cyclical TiN deposition methods using TEMAT precursor vapor and a nitrogen precursor. | 11-06-2008 |
20080274624 | METHOD FOR DEPOSITING TITANIUM NITRIDE FILMS FOR SEMICONDUCTOR MANUFACTURING - Embodiments of the invention describe TiN deposition methods suitable for high volume manufacturing of semiconductor devices on large patterned substrates (wafers). One embodiment describes a chemical vapor deposition (CVD) process using high gas flow rate of a tetrakis(ethylmethylamino)titanium (TEMAT) precursor vapor along with an inert carrier gas at a low process chamber pressure that provides high deposition rate of conformal TiN films with good step coverage in surface reaction limited regime. Other embodiments describe cyclical TiN deposition methods using TEMAT precursor vapor and a nitrogen precursor. | 11-06-2008 |
20090166327 | METHOD FOR IN-SITU REFURBISHING A CERAMIC SUBSTRATE HOLDER - Method for operating a processing system and refurbishing a ceramic substrate holder within a process chamber of the processing system are described. The method includes plasma processing one or more substrates on the ceramic substrate holder, where the processing causes erosion of a nitride material of the ceramic substrate holder. The method further includes refurbishing the ceramic substrate holder in-situ without a substrate residing on the ceramic substrate holder, where the refurbishing includes exposing the ceramic substrate holder to a plasma-excited nitrogen-containing gas in the process chamber to at least partially reverse the erosion of the nitride material. | 07-02-2009 |
20100048009 | METHOD OF FORMING ALUMINUM-DOPED METAL CARBONITRIDE GATE ELECTRODES - A method for forming an aluminum-doped metal (tantalum or titanium) carbonitride gate electrode for a semiconductor device is described. The method includes providing a substrate containing a dielectric layer thereon, and forming the gate electrode on the dielectric layer in the absence of plasma. The gate electrode is formed by depositing a metal carbonitride film, and adsorbing an atomic layer of an aluminum precursor on the metal carbonitride film. The steps of depositing and adsorbing may be repeated a desired number of times until the aluminum-doped metal carbonitride gate electrode has a desired thickness. | 02-25-2010 |
20130149852 | METHOD FOR FORMING A SEMICONDUCTOR DEVICE - A method for forming a semiconductor device includes providing in a process chamber a metal-containing gate electrode film on a substrate, flowing a process gas consisting of hydrogen (H | 06-13-2013 |
20130196505 | METHOD OF FORMING CONFORMAL METAL SILICIDE FILMS - A method is provided for forming a metal silicide layer on a substrate. According to one embodiment the method includes providing the substrate in a process chamber, exposing the substrate at a first substrate temperature to a plasma generated from a deposition gas containing a metal precursor, where the plasma exposure forms a conformal metal-containing layer on the substrate in a self-limiting process. The method further includes exposing the metal-containing layer at a second substrate temperature to a reducing gas in the absence of a plasma, where the exposing steps are alternatively performed at least once to form the metal silicide layer, and the deposition gas does not contain the reducing gas. The method provides conformal metal silicide formation in deep trenches with high aspect ratios. | 08-01-2013 |
20140048885 | DUAL WORKFUNCTION SEMICONDUCTOR DEVICES AND METHODS FOR FORMING THEREOF - Embodiments of the invention provide dual workfunction semiconductor devices and methods for manufacturing thereof. According to one embodiment, the method includes providing a substrate containing first and second device regions, depositing a dielectric film on the substrate, and forming a first metal-containing gate electrode film on the dielectric film, wherein a thickness of the first metal-containing gate electrode film is less over the first device region than over the second device region. The method further includes depositing a second metal-containing gate electrode film on the first metal-containing gate electrode film, patterning the second metal-containing gate electrode film, the first metal-containing gate electrode film, and the dielectric film to form a first gate stack above the first device region and a second gate stack above the second device region. | 02-20-2014 |
20150132939 | METHOD FOR DEPOSITING METAL LAYERS ON GERMANIUM-CONTAINING FILMS USING METAL CHLORIDE PRECURSORS - A method is provided for forming a semiconductor device. According to one embodiment, the method includes providing a substrate having a Ge-containing film thereon, identifying a first plasma processing recipe that uses a metal chloride precursor to deposit a first metal layer on the Ge-containing film at a higher rate than the Ge-containing film is etched by the metal chloride precursor, identifying a second plasma processing recipe that uses the metal chloride precursor to etch the Ge-containing film at a higher rate than a second metal layer is deposited on the Ge-containing film by the metal chloride precursor, performing the first plasma processing recipe to deposit the first metal layer on the Ge-containing film, and performing the second plasma processing recipe to deposit the second metal layer on the first metal layer, and where the second metal layer is deposited at a higher rate than the first metal layer. | 05-14-2015 |
Toshio Hasegawa, Yamanashi JP
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20080226823 | Film-Forming Method - A TiN film is formed to have a predetermined thickness on a semiconductor wafer by heating the semiconductor wafer at a film formation temperature within a process container and performing a cycle including a first step and a second step at least once. The first step is arranged to supply a TiCl | 09-18-2008 |
20090104352 | Method of film formation and computer-readable storage medium - A film formation method includes a first stage including a period of heating a target substrate to a film formation temperature, and supplying a metal compound gas and a nitrogen-containing reducing gas onto the target substrate, thereby directly depositing a metal nitride film by CVD on a target substrate; and a second stage of supplying the metal compound gas and the nitrogen-containing reducing gas, thereby further depositing a metal nitride film by CVD on the metal nitride film initially deposited by the first stage, to obtain a predetermined film thickness. Each of the first stage and the second stage is arranged to repeat one or more times a cycle including a first step of supplying the metal compound gas and the nitrogen-containing reducing gas and a second step of stopping the metal compound gas and supplying the nitrogen-containing reducing gas. | 04-23-2009 |
20140175046 | METHOD FOR FORMING COPPER WIRING - In a Cu wiring forming method for forming a Cu wiring by filling Cu in a recess which is formed in a substrate in a predetermined pattern, a barrier film formed of a TaAlN film is formed at least on the surface of the recess by thermal ALD or thermal CVD. Then a Cu film is formed to fill the recess with the Cu film. Further, the Cu wiring is formed in the recess by polishing the entire surface of the substrate by CMP. | 06-26-2014 |
Toshio Hasegawa, Yamanashi-Ken JP
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20080226822 | Precoat film forming method, idling method of film forming device, loading table structure, film forming device and film forming method - The precoat film forming method has the deposition step of feeding processing gas into the film forming device having the loading table structure | 09-18-2008 |
Toshio Hasegawa, Kai-City JP
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20160111290 | CMOS Vt CONTROL INTEGRATION BY MODIFICATION OF METAL-CONTAINING GATE ELECTRODES - A method of forming a semiconductor device is disclosed in various embodiments. The method includes providing a substrate containing first and second device regions, and a high-k film on the substrate, depositing a metal nitride gate electrode film on the high-k film, forming a metal-containing gate electrode film on the metal nitride gate electrode film in the second device region but not in the first device region, and depositing a Si-based cap layer on the metal-containing gate electrode film in the second device region and on the metal nitride gate electrode film in the first device region. | 04-21-2016 |