Patent application number | Description | Published |
20140077258 | SEMICONDUCTOR DEVICE - In one embodiment, a semiconductor device includes a semiconductor substrate having first and second main surfaces, control electrodes disposed in trenches on the first main surface of the semiconductor substrate and extending in a first direction parallel to the first main surface, and control interconnects disposed on the first main surface of the semiconductor substrate and extending in a second direction perpendicular to the first direction. The semiconductor substrate includes a first semiconductor layer of a first conductivity type, second semiconductor layers of a second conductivity type on a surface of the first semiconductor layer on a first main surface side, third semiconductor layers of the first conductivity type disposed on surfaces of the second semiconductor layers on the first main surface side and extending in the second direction, and a fourth semiconductor layer of the second conductivity type on the second main surface of the semiconductor substrate. | 03-20-2014 |
20140084337 | SEMICONDUCTOR DEVICE - A collector layer of a first conductivity type is provided in the IGBT region and the boundary region and functions as a collector of the IGBT in the IGBT region. A cathode layer of a second conductivity type is provided in the diode region apart from the collector layer and functions as a cathode of the diode. A drift layer of the second conductivity type is provided in the IGBT region, the boundary region, and the diode region, the drift layer being provided on sides of the collector layer and the cathode layer opposite the first electrode. A diffusion layer of the first conductivity type is provided in the boundary region on a side of the drift layer opposite the first electrode. | 03-27-2014 |
20150069460 | SEMICONDUCTOR DEVICE - In one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type having first and second faces, and a second semiconductor layer of a second conductivity type disposed above the first face of the first semiconductor layer. The device further includes control electrodes facing the first and second semiconductor layers via insulating layers, and extending to a first direction parallel to the first face of the first semiconductor layer, and third semiconductor layers of the first conductivity type and fourth semiconductor layers of the second conductivity type alternately disposed along the first direction above the second semiconductor layer. The device further includes fifth semiconductor layers of the first conductivity type disposed below the second semiconductor layer or disposed at positions surrounded by the second semiconductor layer, the fifth semiconductor layers being arranged separately from one another along the first direction. | 03-12-2015 |
Patent application number | Description | Published |
20150263144 | SEMICONDUCTOR DEVICE AND INSULATED GATE BIPOLAR TRANSISTOR - According to one embodiment, an insulated gate bipolar transistor includes a main region, a sense region, and a semiconductor layer that is provided between the main region and the sense region, is in contact with a collector layer of a first conductivity type provided in the main region and the sense region, and has one of a dopant concentration lower than a dopant concentration of the collector layer or a second conductivity type opposite the first conductivity type. | 09-17-2015 |
20150263146 | SEMICONDUCTOR DEVICE - A semiconductor device in an embodiment includes a first region of a second conductivity type between a first electrode and a second electrode and a second region of a first conductivity type between the first region and the second electrode. a third region of the second conductivity type is between the second region and the second electrode. A fourth and fifth region of the first conductivity type are between the third semiconductor region and the second electrode. The fourth and fifth regions are adjacent to each other. A dopant concentration in the fifth region is less than a dopant concentration in the fourth region. A third electrode contacts the second region, the third region, the fourth region, and the fifth region via an insulating film. | 09-17-2015 |
20150263148 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a first semiconductor layer, a first semiconductor region, a second semiconductor region, and an insulating layer. The first semiconductor layer is provided between the first electrode and the second electrode, and contacts the first electrode. The first semiconductor region is provided between the first semiconductor layer and the second electrode, and contacts the second electrode. The second semiconductor region is provided between the first semiconductor region and the second electrode, and contacts the second electrode. An impurity concentration of the second semiconductor region is higher than an impurity concentration of the first semiconductor region. An insulating layer has one end contacting the second electrode and the other end positioned in the first semiconductor layer. The insulating layer extends along the second electrode in a first direction from the first electrode towards the second electrode. | 09-17-2015 |
20150263149 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a first semiconductor region, a second semiconductor region, an insulating region, and a third semiconductor region. The first semiconductor region is of a first conductivity type. The first semiconductor region is provided between the first electrode and the second electrode, and contacts the first electrode. The second semiconductor region is of a second conductivity type. The second conductor region is provided between the first semiconductor region and the second electrode. The insulating region extends from the second electrode to a side of the first semiconductor region. The third semiconductor region is of the first conductivity type. The third semiconductor region is provided in at least a portion of a region between the second semiconductor region and the insulating region, and contacts the first semiconductor region. | 09-17-2015 |