Patent application number | Description | Published |
20130248707 | SAMPLE OBSERVATION METHOD, SAMPLE PREPARATION METHOD, AND CHARGED PARTICLE BEAM APPARATUS - A sample observation method including: placing a sample stage at a first tilt angle with respect to a charged particle beam, and irradiating an observation surface of a sample with the charged particle beam to acquire a first charged particle image; tilting the sample stage to a second tilt angle different from the first tilt angle about a first sample stage axis, and irradiating the observation surface with the charged particle beam to acquire a second charged particle image; tilting the sample stage to a tilt angle at which an area of the observation surface in the acquired charged particle image is larger between the first charged particle image and the second charged particle image; and irradiating the observation surface with the charged particle beam to observe the observation surface. | 09-26-2013 |
20130248735 | COMPOSITE CHARGED PARTICLE BEAM APPARATUS - Provided is a composite charged particle beam apparatus, including: an electron beam column for irradiating a sample with an electron beam; an ion beam column for irradiating the sample with an ion beam to perform etching processing; a sample stage drive portion for moving a sample stage in an irradiation axis direction of the electron beam; and a column adjusting portion for moving the ion beam column relatively to a sample chamber such that the sample is irradiated with the ion beam at a position irradiated with the electron beam. | 09-26-2013 |
20140131575 | CROSS-SECTION PROCESSING AND OBSERVATION METHOD AND CROSS-SECTION PROCESSING AND OBSERVATION APPARATUS - A cross-section processing and observation method performed by a cross-section processing and observation apparatus, the method comprising: a cross-section processing step of forming a cross-section by irradiating a sample with an ion beam; a cross-section observation step of obtaining an observation image of the cross-section by irradiating the cross-section with an electron beam; and repeating the cross-section processing step and the cross-section observation step so as to obtain observation images of a plurality of cross-sections, wherein, in a case where Energy Dispersive X-ray Spectrometry (EDS) measurement of the cross-section is performed and an X-ray of a specified material is detected, an irradiation condition of the ion beam is changed so as to obtain observation images of a plurality of cross-sections of the specified material, and the cross-section processing and observation of the specified material is performed. | 05-15-2014 |
20140291508 | FOCUSED ION BEAM APPARATUS, METHOD FOR OBSERVING CROSS-SECTION OF SAMPLE BY USING THE SAME, AND STORAGE MEDIUM - A focused ion beam apparatus including: a focused ion beam irradiation mechanism forming first and second cross-sections; a first image generation unit generating a first image, including a reflected electron image or a secondary electron image, of the first and second cross-sections; a second image generation unit generating a second image, including an EDS image or a secondary ion image, of the first and second cross-sections; and a control section causing the second image generation unit to generate the second image of the second cross-section, in a case where the first and second images of the first cross-section are acquired, the first image of the second cross-section is acquired, and the first image of the second cross-section includes a region different from a region representing a specific composition in the first image of the first cross-section. | 10-02-2014 |
20140291511 | CHARGED PARTICLE BEAM APPARATUS AND SAMPLE PROCESSING METHOD USING CHARGED PARTICLE BEAM APPARATUS - A charged particle beam apparatus includes a sample stage, a focused ion beam column, a scattered electron detector that detects backscattered electrons generated from a cross-section of a sample, a crystal orientation information generation unit that generates crystal orientation information on a predetermined region of the cross-section, and an angle calculation unit that calculates attachment angles of the sample stage, corresponding to a direction of the cross-section. In response to receiving input of information indicating that the crystal orientation information on the region displayed on a display unit is changed to aimed second crystal orientation information, the angle calculation unit calculates the attachment angles corresponding to the direction of the cross-section for generating the second crystal orientation information, and the focused ion beam column performs etching processing on the cross-section at the calculated attachment angles. | 10-02-2014 |
20150060664 | CROSS-SECTION PROCESSING-AND-OBSERVATION METHOD AND CROSS-SECTION PROCESSING-AND-OBSERVATION APPARATUS - A cross-section processing-and-observation method includes: a cross-section exposure step of irradiating a sample with a focused ion beam to expose a cross-section of the sample; a cross-sectional image acquisition step of irradiating the cross-section with an electron beam to acquire a cross-sectional image of the cross-section; and a step of repeatedly performing the cross-section exposure step and the cross-sectional image acquisition step along a predetermined direction of the sample at a setting interval to acquire a plurality of cross-sectional images of the sample. In the cross-sectional image acquisition step, a cross-sectional image is acquired under different condition settings for a plurality of regions of the cross-section. | 03-05-2015 |
20150060668 | CHARGED PARTICLE BEAM APPARATUS - A charged particle beam apparatus for processing a tip end portion of a sample into a needle shape, includes an ion beam irradiation unit that irradiates the tip end portion with ion beams, an electron beam irradiation unit that irradiates the tip end portion with electron beams, a secondary electron detection unit that detects secondary electrons generated at the tip end portion by the irradiation with the electron beams, and an EBSD detection unit that detects diffracted electrons generated at the tip end portion by the irradiation with the electron beams. | 03-05-2015 |
20150060695 | CHARGED PARTICLE BEAM APPARATUS - A charged particle beam apparatus includes: an electron beam irradiation unit irradiating a sample with electron beams having a first irradiation axis; a rotation stage holding the sample and having a rotation axis in a direction perpendicular to the first irradiation axis; an ion beam irradiation unit irradiating the sample with ion beams having a second irradiation axis that is substantially parallel to the rotation axis; a detection unit detecting at least one of charged particles and X rays generated via the sample by the irradiation with the ion beams and electron beams; and a gaseous ion beam irradiation unit irradiating the sample with gaseous ion beams. | 03-05-2015 |
20150115156 | CROSS SECTION PROCESSING METHOD AND CROSS SECTION PROCESSING APPARATUS - A cross section processing method and a cross section processing apparatus are provided in which it is possible to form a flat cross section in a sample composed of a plurality of substances having different hardness by a focused ion beam. The etching of a processing area is performed while variably controlling the irradiation interval, the irradiation time, or the like of a focused ion beam based on cross section information of an SEM image obtained by the observation of a cross section. In this way, even if a sample is composed of a plurality of substances having different hardness, it is possible to form a flat observation surface with a uniform etching rate. | 04-30-2015 |
20150206702 | CHARGED PARTICLE BEAM DEVICE, CONTROL METHOD FOR CHARGED PARTICLE BEAM DEVICE, AND CROSS-SECTION PROCESSING OBSERVATION APPARATUS - A cross-section processing observation apparatus includes an ion beam control unit for controlling a charged particle beam generation-focusing portion and a deflector and including a DAC which converts an input digital signal into an analog signal which is to be input to the deflector, and a field-of-view setting portion for setting a value of a field of view of a charged particle beam where the scanning performed by the deflector is performed on the basis of a set value of a slice amount. | 07-23-2015 |
20150221473 | CHARGED PARTICLE BEAM APPARATUS - A charged particle beam apparatus including a column irradiating a sample with a charged particle beam, a detector detecting a secondary particle emitted from the sample, an image data generating section generating image data indicating two-dimensional distribution of an amount of the secondary particle detected by the detector, and a controller that respectively sets first and second position adjustment irradiation frames for first and second beam condition on a surface of the sample in the image data, form a first and second irradiation traces by respectively irradiating the first and second position adjustment irradiation frames with the charged particle beams of the first and second beam conditions, correct a position of the second processing irradiation frame, based on a position displacement amount between a predetermined position of the first irradiation trace and a predetermined position of the second irradiation trace. | 08-06-2015 |
20150228450 | CHARGED PARTICLE BEAM APPARATUS - A charged particle beam apparatus includes: a charged particle beam column; a detector configured to detect secondary charged particles; an image processor; a display device; a needle arranged in an irradiation area of charged particle beam; a needle actuator; a user interface; and a controller configured to control the needle actuator to actuate the needle in accordance with a target position that is set by the user interface. The controller controls the needle actuator to move the needle to track a change of the target position that is set by the user interface. | 08-13-2015 |
20150228451 | CHARGED PARTICLE BEAM APPARATUS - A charged particle beam apparatus includes: a charged particle beam column configured to irradiate an irradiation target with a charged particle beam; a detector configured to detect secondary charged particles emitted from the irradiation target by the irradiation of the charged particle beam; a needle arranged in an irradiation area of the charged particle beam; a needle actuator configured to actuate the needle; and a controller configured to control the needle actuator to actuate the needle along a movement route that is configured by a preset target position and preset way points. The controller controls the needle actuator to set an actuating direction of the needle for each of the way points. | 08-13-2015 |
20150262788 | CROSS-SECTION PROCESSING AND OBSERVATION METHOD AND CROSS-SECTION PROCESSING AND OBSERVATION APPARATUS - A cross-section processing and observation method performed by a cross-section processing and observation apparatus comprises a cross-section processing step of forming a cross-section by irradiating a sample with an ion beam; a cross-section observation step of obtaining an observation image of the cross-section by irradiating the cross-section with an electron beam; and repeating the cross-section processing step and the cross-section observation step so as to obtain observation images of a plurality of cross-sections. In a case where Energy Dispersive X-ray Spectrometry (EDS) measurement of the cross-section is performed and an X-ray of a specified material or of a non-specified material that is different from a pre-specified material is detected, an irradiation condition of the ion beam is changed so as to obtain observation images of a plurality of cross-sections of the specified material, and the cross-section processing and observation of the specified material is performed. | 09-17-2015 |
Patent application number | Description | Published |
20120144942 | TRANSMISSION - A transmission that is able to perform shift operation and select operation using the driving force of a single electric motor is provided. A shift/select actuating device includes: an electric motor; a first conversion mechanism; a second conversion mechanism; and a changing unit that changes a destination, to which the rotational driving force of the electric motor is transmitted, between the first conversion mechanism and the second conversion mechanism. The changing unit includes: a first electromagnetic clutch that transmits the rotational driving force of the electric motor to the first conversion mechanism or interrupts the rotational driving force; and a second electromagnetic clutch that transmits the rotational driving force to the second conversion mechanism or interrupts the rotational driving force. | 06-14-2012 |
20130052058 | ELECTRIC PUMP UNIT - A pump body is formed of a pump housing and a pump plate provided in front of the pump housing. A motor housing is fixed to a rear end of the pump housing, and accommodates a pump driving electric motor. A bearing device that supports a motor shaft includes a first bearing that is arranged in a closed-end hole formed in a rear face of the pump plate and supporting a front end portion of the motor shaft, and a second bearing that is arranged radially inward of a cylindrical bearing support portion formed in the pump housing and extending inside the motor housing and that supports a middle portion of the motor shaft. A pump rotor is arranged between the first bearing and the second bearing. | 02-28-2013 |
20140090945 | POWER GENERATION DEVICE - A one-way clutch used in a wind turbine generator connects an input rotor with an output rotor so that the input rotor and the output rotor are rotatable together with each other when a main shaft rotates in a forward direction and rotation speed of the input rotor is higher than rotation speed of the output rotor, and disconnects the input rotor and the output rotor from each other when the rotation speed of the input rotor is lower than the rotation speed of the output rotor. Further, the wind turbine generator includes a second one-way clutch that permits transmission of force caused by the rotation of the main shaft, to the input rotor when the main shaft rotates in the forward direction, and restricts the rotation of the main shaft when the main shaft tries to rotate in a reverse direction. | 04-03-2014 |
Patent application number | Description | Published |
20110193171 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first transistor formed on a first element region, and a first protecting element including a second transistor formed on a second element region. A second protecting element ohmic electrode is connected to a first gate electrode, a first protecting element ohmic electrode is connected to a first ohmic electrode, and a first protecting element gate electrode is connected to at least one of the first protecting element ohmic electrode and the second protecting element ohmic electrode. The second element region is smaller in area than the first element region. | 08-11-2011 |
20110204807 | TWO-WIRE AC SWITCH - A two-wire AC switch suppressing heat from a bidirectional switch element inside the switch is provided. The two-wire AC switch | 08-25-2011 |
20110215746 | SEMICONDUCTOR DEVICE - A semiconductor device according to the present invention is a semiconductor device which includes: a semiconductor element; a gate drive circuit; and a connection terminal unit, wherein the semiconductor element includes: a gate electrode pad; and first and second ohmic electrode pads, the connection terminal includes: a first ohmic electrode terminal connected to the first ohmic electrode pad; a second ohmic electrode terminal connected to the second ohmic electrode pad; a gate drive terminal connected to the first ohmic electrode pad; and a gate terminal connected to the gate electrode pad, an input terminal of the gate drive circuit is connected to the gate drive terminal, an output terminal of the gate drive circuit is connected to the gate terminal, and a potential of the first ohmic electrode pad corresponds to a reference potential of the gate drive circuit. | 09-08-2011 |
20110284928 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor layer stack formed on a substrate, a first ohmic electrode and a second ohmic electrode which are formed on the semiconductor layer stack, and are spaced from each other, a first control layer formed between the first ohmic electrode and the second ohmic electrode, and a first gate electrode formed on the first control layer. The first control layer includes a lower layer, an intermediate layer which is formed on the lower layer, and has lower impurity concentration than the lower layer, and an upper layer which is formed on the intermediate layer, and has higher impurity concentration than the intermediate layer. | 11-24-2011 |
20120001200 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes: a semiconductor chip; a protective film and an insulating film sequentially stacked over the semiconductor chip, and each having openings that expose source, drain, and gate pads; a heat dissipation terminal made of a material having a higher thermal conductivity than the insulating film; connection terminals formed on the source, drain, and gate pads and surrounded by the insulating film; and a mount substrate having connection pads. The semiconductor chip has a source electrode having a plurality of source fingers, a drain electrode having a plurality of drain fingers, and a gate electrode having a plurality of gate fingers. The source, drain, and gate pads are connected to the source electrode, the drain electrode, and the gate electrode, respectively. The connection terminals are respectively connected to the connection pads. The heat dissipation terminal is in close contact with the mount substrate. | 01-05-2012 |
20120061729 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride semiconductor device includes a semiconductor layer stack including a first nitride semiconductor layer and a second nitride semiconductor layer stacked in this order on a substrate. A p-type third nitride semiconductor layer is selectively formed on the semiconductor layer stack, and a gate electrode is formed on the third nitride semiconductor layer. A first ohmic electrode and a second ohmic electrode are formed on regions of the semiconductor layer stack located at both sides of the third nitride semiconductor layer, respectively. A first gate electrode forms a Schottky contact with the third nitride semiconductor layer. | 03-15-2012 |
20130009676 | BIDIRECTIONAL SWITCHING DEVICE AND BIDIRECTIONAL SWITCHING CIRCUIT USING THE SAME - A bidirectional switching device includes a semiconductor multilayer structure made of a nitride semiconductor, a first ohmic electrode and a second ohmic electrode which are formed on the semiconductor multilayer structure, and a first gate electrode and a second gate electrode. The first gate electrode is covered with a first shield electrode having a potential substantially equal to that of the first ohmic electrode. The second gate electrode is covered with the second shield electrode having a potential substantially equal to that of the second ohmic electrode. An end of the first shield electrode is positioned between the first gate electrode and the second gate electrode, and an end of the second shield electrode is positioned between the second gate electrode and the first gate electrode. | 01-10-2013 |
20130087858 | SEMICONDUCTOR DEVICE - A bidirectional switch includes a plurality of unit cells | 04-11-2013 |
20140097468 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer ( | 04-10-2014 |
20140103360 | SEMICONDUCTOR DEVICE - A semiconductor device having: a substrate; a nitride semiconductor layer including a first semiconductor layer made of GaN or In | 04-17-2014 |