Wei-Kuo
Wei-Kuo Chang, Hsinchu City TW
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20100053091 | METHOD AND SYSTEMS FOR IDENTIFYING OBJECTS ON A TOUCH-SENSITIVE DEVICE - A method of identifying objects on a touch-sensitive device comprises scanning a plurality of “m” traces of the touch-sensitive device, m being a positive integer, obtaining a count value of each of the “m” traces, wherein an x-th trace has a count value a | 03-04-2010 |
20110109575 | METHOD FOR CURSOR MOTION CONTROL BY A TOUCHPAD TO MOVE A CURSOR ON A DISPLAY SCREEN - A cursor control method using a touchpad triggers an automatic movement signal for a cursor when an object moves from a first defined region into a second defined region of a two-dimensional touch sensor, or when an object stays in the second defined region for a preset duration after it moves from the first defined region into the second defined region, and define the automatic movement signal with the direction identical to that of the object moving into the second defined region, so that the cursor will keep moving in its last moving direction. | 05-12-2011 |
Wei-Kuo Chang, Taipei City TW
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20080219928 | Measuring Gastrointestinal Parameters - The present application relates to methods for determining gastric residual volumes and amounts of dietary formula in gastric contents using measurements of soluble solids concentrations in gastric contents, and in some embodiments, a concentrate having a relatively high concentration of soluble solids. The methods can be used for measuring gastric residual volumes of subjects who have fasted or have a low or reduced gastric content. | 09-11-2008 |
Wei-Kuo Chen, Hsinchu TW
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20150076505 | PATTERNED OPTO-ELECTRICAL SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - The present invention relates to a patterned opto-electrical substrate, comprising a substrate, the substrate has a first patterned structure, a spacer region and a second patterned structure, wherein the second patterned structure is formed on one or both of the first patterned structure and the spacer region, and the first patterned structure is a micron-scale protruding structure or a micron-scale recessing structure, while the second patterned structure is a submicron-scale recessing structure. The present invention also relates to a method for manufacturing the aforementioned patterned opto-electrical substrate and light emitting diodes having the aforementioned patterned opto-electrical substrate. | 03-19-2015 |
Wei-Kuo Chen, Hsinchu City TW
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20090260504 | AUTOMATIC AUDIO PLAYING DEVICE - The automatic audio playing device mainly contains a hollow body member, a control unit housed inside the body member, a plug member and a speaker as integral parts of the body member, an adaptor, and a remote controller. The control unit has a radio reception circuit for receiving control signals from the remote controller. The control signal is forwarded to a signal processing circuit, which in turn triggers a microprocessor in accordance with the control signals. The microprocessor instructs an audio playing circuit to play an appropriate digital audio file via the speaker. The plug member could be plugged into a conventional lamp socket for a light bulb, or the plug member is first plugged into the adaptor and the adaptor is then plugged into a conventional wall socket. Once this is done, the automatic audio playing device could be turned on and off by switches of existing wiring. | 10-22-2009 |
20090280592 | Nanoparticle structure and manufacturing process of multi-wavelength light emitting devices - A structure of multi-wavelength light emitting device comprises multi-stacked active layer structure. Each stacked layer comprises lower energy bandgap well | 11-12-2009 |
20110155061 | REACTOR, CHEMICAL VAPOR DEPOSITION REACTOR, AND METALORGANIC CHEMICAL VAPOR DEPOSITION REACTOR - A reactor for film deposition having a first heating unit and the second heating units is described. The temperature of each heating unit is controlled individually by heating and/or cooling means. The first heating unit and the second heating unit are disposed face-to-face to each other to form a reaction region therein, and their inner sides are placed with an inclined angle. At least one substrate is disposed on the inner surface of the first heating unit. The temperature of the second heating unit can be adapted to a temperature higher than the temperature of the first heating unit to improve the thermal decomposition efficiency of input reactants so that a low-temperature film deposition can be accomplished. | 06-30-2011 |
Wei-Kuo Chiang, Chiayi County TW
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20090097420 | METHOD AND SYSTEM FOR LAWFUL INTERCEPTION OF VALUE-ADDED SERVICE IN IP MULTIMEDIA SUBSYSTEM - A method and a system for lawfully intercepting a value-added service in an IP multimedia subsystem (IMS) are provided. In the present method, a service subscription information is sent to a first information delivery module when a suspect is registered to an IMS network. A service triggering information is sent to the first information delivery module when the value-added service subscribed by the suspect is triggered. Furthermore, when the value-added service is provided, an intercept related information (IRI) is sent to the first information delivery module according to the characteristics of the value-added service. As a result, the suspect who is using the value-added service in the IMS can be lawfully intercepted according to the information collected by the first information delivery module. | 04-16-2009 |
Wei-Kuo Huang, Taipei City TW
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20090001489 | SILICON PHOTODETECTOR AND METHOD FOR FORMING THE SAME - A structure of a silicon photodetector and a method for forming the same by using the conventional CMOS semiconductor manufacturing process and micro-electromechanical system manufacturing process, in which the micro-electromechanical system manufacturing process (lateral etching process) is applied for elimination of effect and interference caused by a substrate of the silicon photodetector after optical absorption thereof, thereby greatly improving the response speed of the silicon photodetector. This can be done only by applying the lateral etching process onto a portion of the substrate of the silicon photodetector after the semiconductor manufacturing process is finished, through which slow diffusion carriers produced from the optical absorption of the substrate can be effectively reduced and the response speed is thus enhanced. | 01-01-2009 |
Wei-Kuo Huang, Hsinchu City TW
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20120112304 | IMAGE SENSOR - An image sensor including a substrate, a deep well layer, multiple first sensing units, second sensing units and third sensing units is provided. The first, the second and the third sensing units are located between a first surface and the deep well layer. A ratio between an area of a part of the deep well layer under each first sensing unit and an area of each first sensing unit is a first area ratio. A ratio between an area of a part of the deep well layer under each second sensing unit and an area of each second sensing unit is a second area ratio. A ratio between an area of a part of the deep well layer under each third sensing unit and an area of each third sensing unit is a third area ratio. The first area ratio is greater than the second and the third area ratios. | 05-10-2012 |
Wei-Kuo Wu, Guang Zhou Science City CN
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20090134474 | Constant Current Source Device and Method for Manufacturing The Same - The present invention discloses a constant current source device with over current and over voltage protection function that can be directly applied to AC power and DC power, and a method for manufacturing the constant current source device is also disclosed. The device includes a silicon substrate ( | 05-28-2009 |
20090146732 | Constant Current Source Circuit - The present invention discloses a constant current source circuit with energy saving and over voltage protection to provide a constant current source circuit with less elements, simple circuitry, energy saving and over voltage protection. The present invention includes a regulating circuit ( | 06-11-2009 |
20090315123 | HIGH VOLTAGE DEVICE WITH CONSTANT CURRENT SOURCE AND MANUFACTURING METHOD THEREOF - A high voltage device with constant current source and the manufacturing method thereof. The device includes a P type silicon substrate ( | 12-24-2009 |