Yanagitani
Akihide Yanagitani, Kanagawa-Ken JP
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20120230623 | FULL COMPLEMENT ROLLER BEARING PACKED WITH GEL-LIKE LUBRICANT - A rolling-contact bearing has an outer ring, an inner ring or a shaft rotational relative to the outer ring and a full complement of rollers disposed for rotation between the outer ring and the shaft. A semisolid gel-like lubricant composed of a mixture of a gelling agent and lubricating oil is packed into interstices or gaps between the outer ring and the rollers and among the adjacent rollers to retain surely the rollers on a circular inside surface of the outer ring. The gel-like lubricant is composed of the lubricating oil of mineral oil or base oil, and a powdery oil gelling agent based on amino acids. | 09-13-2012 |
Akihiko Yanagitani, Himeji-Shi JP
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20090022614 | Method for Producing Sputtering Target Material for Ni-W Based Interlayer - There is provided a method for producing sputtering target materials which are used for a Ni—W based interlayer in a perpendicular magnetic recording medium. In this producing method, a Ni—W based alloy powder is prepared as a raw material powder. The alloy powder comprises 5 to 20 at % of W and the balance Ni and unavoidable impurities and is produced by gas atomization. The raw material powder is consolidated at a temperature ranging from 900 to 1150° C. This producing method makes it possible to significantly restrain expansion of the powder-filled billet in the consolidation step, thus efficiently producing Ni—W based sputtering target materials with stable qualities. | 01-22-2009 |
20130149185 | Fe-Co Based Target Material and Method for Producing the Same - A method for producing a Fe—Co based target material for forming a soft magnetic thin-film comprising the steps of: preparing a first raw-material powder having an Fe:Co weight ratio ranging from 8:2 to 7:3 and a second raw-material powder having an Fe—Co weight ratio ranging from 2:8 to 0:10; mixing the first raw-material powder and the second raw-material powder together to obtain a powder mixture having an Fe:Co weight ratio ranging from 8:2 to 2:8; and applying a pressure of not less than 100 MPa to the powder mixture at a temperature ranging from 1073 to 1473 K for consolidation. At least one additional element selected from the group consisting of Nb, Zr, Ta and Hf is added to either one or both of the first and second raw-material powders in a total amount of 3 to 15 atom % with respect to the total amount of the powder mixture. | 06-13-2013 |
20140154127 | Alloy and Sputtering Target Material for Soft-Magnetic Film Layer in Perpendicular Magnetic Recording Medium, and Method for Producing the Same - There are provided a sputtering target material for a soft-magnetic film layer with a high saturation magnetic flux density and high amorphous properties and a method for producing the sputtering target material. The target material is made of an alloy comprising one or more of Zr, Hf, Nb, Ta and B in an amount satisfying 5 at %≦(Zr+Hf+Nb+Ta)+B/2≦10 at % and having 7 at % or less of B; 0 to 5 at % in total of Al and Cr; and the balance being Co and Fe in an amount satisfying 0.20≦Fe/(Fe+Co)≦0.65 (at % ratio) with unavoidable impurities. | 06-05-2014 |
Akihiko Yanagitani, Hyogo-Ken JP
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20100209284 | Alloy for Soft Magnetic Layer in Perpendicular Magnetic Recording Medium - A soft magnetic alloy for perpendicular magnetic recording medium excellent n saturation magnetic flux density, amorphousness and atmospheric corrosion resistance. The alloy is an Fe-Co based alloy and comprises Fe in an amount satisfying 0.25 to 0.65 of Fe/(Fe+Co) ratio, which is an atomic ratio of Fe and Fe+Co; Zr+Hf in an amount of 6 to 100 at %; Na+Ta in an amount of 0 to 2 at %; Al and/or Cr in an amount of 0 to 5 at %; and the balance Co and unavoidable impurities. A part of Zr and/or Hf can be replaced by B, provided that the amount of B to replace Zr and/or Hf is double in at % of the total amount of Zr and Hf to be replaced and that the total amount of Zr and Hf after replacement is 4 at % or more. | 08-19-2010 |
20110020169 | Sputtering Target Material for Producing Intermediate Layer Film of Perpendicular Magnetic Recording Medium and Thin Film Produced by Using the Same - There is disclosed a sputtering target material for producing an intermediate layer film of a perpendicular magnetic recording medium, which is capable of dramatically reducing the crystal grain size of a thin film formed by sputtering. The sputtering target material comprises, in at %, 1 to 20% of W; 0.1 to 10% in total of one or more elements selected from the group consisting of P, Zr, Si and B; and balance Ni. | 01-27-2011 |
Akihiko Yanagitani, Himeji JP
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20090071822 | Alloy and Sputtering Target Material for Soft-Magnetic Film Layer in Perpendicular Magnetic Recording Medium, and Method for Producing the Same - There are provided a sputtering target material for a soft-magnetic film layer with a high saturation magnetic flux density and high amorphous properties and a method for producing the sputtering target material. The target material is made of an alloy comprising one or more of Zr, Hf, Nb, Ta and B in an amount satisfying 5 at %≦(Zr+Hf+Nb+Ta)+B/2≦10 at % and having 7 at % or less of B; 0 to 5 at % in total of Al and Cr; and the balance being Co and Fe in an amount satisfying 0.20≦Fe/(Fe+Co)≦0.65 (at % ratio) with unavoidable impurities. | 03-19-2009 |
Junko Yanagitani, Itami-Shi JP
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20110297539 | WATER QUALITY ANALYZER - A water quality analyzer comprises: sensor electrodes | 12-08-2011 |
Kenichi Yanagitani, Nirasaki-Shi JP
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20090133755 | Gas supply system and proessing system - A processing system that can supply a material gas produced inside a material reservoir tank into a processing apparatus while generating almost no pressure loss is provided. | 05-28-2009 |
Kenichi Yanagitani, Yamanashi JP
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20110265725 | FILM DEPOSITION DEVICE AND SUBSTRATE PROCESSING DEVICE - A film deposition device includes a substrate transporting device arranged in a vacuum chamber to include a circulatory transport path in which substrate mounting parts arranged in a row are transported in a circulatory manner, the circulatory transport path including a linear transport path in which the substrate mounting parts are transported linearly. A first reactive gas supplying part is arranged along a transporting direction in which the substrate mounting parts are transported in the linear transport path, to supply a first reactive gas to the substrate mounting parts. A second reactive gas supplying part is arranged alternately with the first reactive gas supplying part along the transporting direction, to supply a second reactive gas to the substrate mounting parts. A separation gas supplying part is arranged to supply a separation gas to a space between the first reactive gas supplying part and the second reactive gas supplying part. | 11-03-2011 |
Takagimi Yanagitani, Mitoyo-Shi JP
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20150129816 | Light-Transmitting Rare-Earth Gallium Garnet Ceramic, Process for Producing Same, and Faraday Rotator - There is provided a rare-earth gallium garnet ceramic having a high extinction ratio and a high light transmittance. The rare-earth gallium garnet ceramic contains, as a sintering aid, 5 mass ppm or more and 500 mass ppm or less of Ge calculated as metal, and 20 mass ppm or more and 250 mass ppm or less of Al calculated as metal. | 05-14-2015 |
Takahiko Yanagitani, Kyoto JP
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20100133091 | THIN FILM PRODUCING METHOD AND HEXAGONAL PIEZOELECTRIC THIN FILM PRODUCED THEREBY - A magnetron circuit of a rectangular type is disposed on a lower surface of a rectangular target. A half of the target is covered with a shield plate, so that sputtering particles sputtered from an erosion region (a region with a maximized magnetic flux density) therebelow is blocked so as not to fly toward a substrate. The substrate is disposed at a level so as to be located in a plasma region of a vacuum chamber, and sputtering particles (ZnO) sputtered from a region exposed from the shield plate in the erosion region is caused to be incident on a surface of the substrate. When a gas pressure is lowered, a mean free path of each of the sputtering particles is lengthened to cause a large amount of high-energy sputtering particles to be incident. As a result, a hexagonal crystal particle having a plane that is a crystal plane hardly damaged by incidence of the high-energy sputtering particles is preferentially grown to form a c-axis in-plane oriented film. | 06-03-2010 |
Yuta Yanagitani, Kanagawa JP
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20140177312 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device having a high degree of freedom of layout has a first part AR | 06-26-2014 |
Yuta Yanagitani, Nanae JP
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20110032751 | SEMICONDUCTOR DEVICE - The present invention is directed to provide a semiconductor device having a dual-port memory circuit in which influence of placement of replica cells exerted on enlargement of chip area is reduced. A memory cell array of a dual-port memory circuit has: a first replica cell array used to respond to an instruction of reading operation from one of dual ports; and a second replica cell array used to respond to an instruction of reading operation from the other dual port. Each of the replica cell arrays has: replica bit lines obtained by mutually short-circuiting parallel lines having a length obtained by cutting, in half, an inversion bit line and a non-inversion bit line of complementary bit lines to which data input/output terminals of a memory cell are coupled; and replica cells coupled to the replica bit lines and having transistor placement equivalent to that of the memory cells. | 02-10-2011 |
20120307551 | SEMICONDUCTOR DEVICE - The present invention is directed to provide a semiconductor device having a dual-port memory circuit in which influence of placement of replica cells exerted on enlargement of chip area is reduced. A memory cell array of a dual-port memory circuit has : a first replica cell array used to respond to an instruction of reading operation from one of dual ports; and a second replica cell array used to respond to an instruction of reading operation from the other dual port. Each of the replica cell arrays has : replica bit lines obtained by mutually short-circuiting parallel lines having a length obtained by cutting, in half, an inversion bit line and a non-inversion bit line of complementary bit lines to which data input/output terminals of a memory cell are coupled; and replica cells coupled to the replica bit lines and having transistor placement equivalent to that of the memory cells. | 12-06-2012 |