Patent application number | Description | Published |
20100234205 | TiO2-containing quartz glass substrate - An object of the present invention is to provide a TiO | 09-16-2010 |
20100261597 | TIO2-CONTAINING SILICA GLASS - The present invention is to provide a TiO | 10-14-2010 |
20100317505 | TIO2-CONTAINING SILICA GLASS AND OPTICAL MEMBER FOR LITHOGRAPHY USING THE SAME - The present invention is to provide a TiO | 12-16-2010 |
20100323872 | TIO2-CONTAINING SILICA GLASS AND OPTICAL MEMBER FOR EUV LITHOGRAPHY USING THE SAME - The present invention provides a TiO | 12-23-2010 |
20100323873 | TIO2-CONTAINING SILICA GLASS AND OPTICAL MEMBER FOR LITHOGRAPHY USING THE SAME - The present invention provides a TiO | 12-23-2010 |
20110089612 | TIO2-CONTAINING QUARTZ GLASS SUBSTRATE - An object of the present invention is to provide a TiO | 04-21-2011 |
20110301015 | PROCESS FOR PRODUCING POROUS QUARTZ GLASS OBJECT, AND OPTICAL MEMBER FOR EUV LITHOGRAPHY - The present invention relates to a process for producing a porous quarts glass body containing hydrolyzing a metal dopant precursor and an SiO | 12-08-2011 |
20120100341 | METHOD FOR PRODUCING TIO2-SIO2 GLASS BODY, METHOD FOR HEAT-TREATING TIO2-SIO2 GLASS BODY, TIO2-SIO2 GLASS BODY, AND OPTICAL BASE FOR EUVL - The present invention relates to a process for production of a TiO | 04-26-2012 |
20120121857 | METHOD FOR PRODUCING TIO2-SIO2 GLASS BODY, METHOD FOR HEAT-TREATING TIO2-SIO2 GLASS BODY, TIO2-SIO2 GLASS BODY, AND OPTICAL BASE FOR EUVL - The present invention relates to a process for production of a TiO | 05-17-2012 |
20120149543 | TIO2-CONTAINING SILICA GLASS, AND OPTICAL MEMBER FOR EUV LITHOGRAPHY - The present invention relates to a TiO | 06-14-2012 |
20140335215 | BLANK FOR NANOIMPRINT MOLD, NANOIMPRINT MOLD, AND METHODS FOR PRODUCING SAID BLANK AND SAID NANOIMPRINT MOLD - The present invention relates to a blank for a nanoimprint mold, comprising a glass substrate and a hard mask layer formed on the glass substrate, wherein the hard mask layer contains chromium (Cr) and nitrogen (N) and has a Cr content of 45 to 95 at %, an N content of 5 to 55 at % and a total content of Cr and N of 95 at % or more and the thickness of the hard mask layer is 1.5 nm or more and less than 5 nm. | 11-13-2014 |