Yoshihisa Abe
Yoshihisa Abe, Hadano-Shi JP
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20110062556 | COMPOUND SEMICONDUCTOR SUBSTRATE - A compound semiconductor substrate which inhibits the generation of a crack or a warp and is preferable for a normally-off type high breakdown voltage device, arranged that a multilayer buffer layer | 03-17-2011 |
20120211763 | NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A nitride semiconductor substrate suitable for a normally-off type high breakdown-voltage device and a method of manufacturing the substrate are provided allowing both a higher threshold voltage and improvement in current collapse. | 08-23-2012 |
20140319535 | NITRIDE SEMICONDUCTOR SUBSTRATE - A nitride semiconductor substrate is provided which is suitable for a high withstand voltage power device and prevents a warp and a crack from generating in a Si substrate when forming a thick nitride semiconductor layer on the substrate. A nitride semiconductor substrate | 10-30-2014 |
Yoshihisa Abe, Sakai-Shi JP
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20110026773 | IMAGE PROCESSING APPARATUS, INFORMATION PROCESSING SYSTEM, AND IMAGE PROCESSING METHOD - A technique is provided which can improve the precision of a matching point search with a plurality of images taking the same object where distant and near views coexist. A plurality of first images obtained by time-sequentially imaging an object from a first viewpoint, and a plurality of second images obtained by time-sequentially imaging the object from a second viewpoint, are obtained. Reference regions including a reference point are set respectively in the first images with the same arrangement, and comparison regions corresponding to the form of the reference regions are set respectively in the second images with the same arrangement. One reference distribution of pixel values about two-or-more-dimensional space is generated from the distributions of pixel values about the plurality of reference regions, and one comparison distribution of pixel values about two-or-more-dimensional space is generated from the distributions of pixel values about the plurality of comparison regions. Then, a matching point in the plurality of second images that corresponds to the reference point is detected by using the reference distribution of pixel values and the comparison distribution of pixel values. | 02-03-2011 |
Yoshihisa Abe, Hadano City JP
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20080224268 | NITRIDE SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE - To provide a nitride semiconductor single crystal substrate comprising a Si substrate and a nitride semiconductor film which has semi-polar (10-1m) plane (m: natural number) and a thickness of 1 μm or more, the nitride semiconductor single crystal substrate being suitably used for a light-emitting device, the nitride semiconductor single crystal substrate being suitably used for a light-emitting device, this invention provides a nitride semiconductor single crystal substrate comprising a Si substrate having an off-cut angle of 1 to 35° in the <110> direction from the <100> direction, a buffer layer | 09-18-2008 |
20090065812 | COMPOUND SEMICONDUCTOR SUBSTRATE - Provides is a compound semiconductor substrate about which the thickness of its nitride semiconductor single crystal layer can be made large while the generation of cracks, crystal defects or the like is restrained in the nitride semiconductor single crystal layer. The substrate has a first intermediate layer | 03-12-2009 |
20130082355 | NITRIDE SEMICONDUCTOR SUBSTRATE - A nitride semiconductor substrate is provided in which leak current reduction and improvement in current collapse are effectively attained when using Si single crystal as a base substrate. The nitride semiconductor substrate is such that an active layer of a nitride semiconductor is formed on one principal plane of a Si single crystal substrate through a plurality of buffer layers made of a nitride, in the buffer layers, a carbon concentration of a layer which is in contact with at least the active layer is from 1×10 | 04-04-2013 |
Yoshihisa Abe, Kagawa JP
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20120040172 | Tantalum Carbide-Coated Carbon Material and Production Method Thereof - The problem of the present invention is provision of a tantalum carbide-coated carbon material having superior corrosion resistance to reducing gas and superior resistance to thermal shock at a high temperature and a production method thereof. | 02-16-2012 |
Yoshihisa Abe, Osaka-Shi JP
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20130240090 | METHOD FOR CARBURIZING TANTALUM CONTAINER - Provided is a method for carburizing a tantalum container which can easily control the carburization thicknesses of various portions of the tantalum container and carburize the tantalum container with a uniform thickness. A method for carburizing a tantalum container | 09-19-2013 |