Patent application number | Description | Published |
20090117709 | MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - The technology in which lowering of the manufacturing yield of the semiconductor products resulting from contamination impurities can be suppressed is offered. | 05-07-2009 |
20090121337 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR - To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented. | 05-14-2009 |
20090191667 | SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD OF THE SAME - A semiconductor device having a structure in which the structure is laminated in many stages is made thin. A reforming area is formed by irradiating a laser beam, where a condensing point is put together with the inside of the semiconductor substrate of a semiconductor wafer. Then, after applying the binding material of liquid state to the back surface of a semiconductor wafer by a spin coating method, this is dried and a solid-like adhesive layer is formed. Then, a semiconductor wafer is divided into each semiconductor chip by making the above-mentioned reforming area into a division origin. By pasting up this semiconductor chip on the main surface of the other semiconductor chip by the adhesive layer of the back surface, a semiconductor device having a structure in which the semiconductor device is laminated in many stages is manufactured. | 07-30-2009 |
20100213594 | SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD OF THE SAME - A semiconductor device having a structure in which the structure is laminated in many stages is made thin. A reforming area is formed by irradiating a laser beam, where a condensing point is put together with the inside of the semiconductor substrate of a semiconductor wafer. Then, after applying the binding material of liquid state to the back surface of a semiconductor wafer by a spin coating method, this is dried and a solid-like adhesive layer is formed. Then, a semiconductor wafer is divided into each semiconductor chip by making the above-mentioned reforming area into a division origin. By pasting up this semiconductor chip on the main surface of the other semiconductor chip by the adhesive layer of the back surface, a semiconductor device having a structure in which the semiconductor device is laminated in many stages is manufactured. | 08-26-2010 |
20110124180 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD COMPRISING A METAL PATTERN AND LASER MODIFIED REGIONS IN A CUTTING REGION - To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented. | 05-26-2011 |
20110126899 | OXIDE EVAPORATION MATERIAL, TRANSPARENT CONDUCTING FILM, AND SOLAR CELL - An oxide evaporation material according to the present invention includes a sintered body containing indium oxide as a main component thereof and cerium with a Ce/In atomic ratio of 0.001 to 0.110. The L* value in the CIE 1976 color space is 62 to 95. The oxide evaporation material with the L* value of 62 to 95 has an optimal oxygen amount. Accordingly, even when a small amount of an oxygen gas is introduced into a film-formation vacuum chamber, a transparent conducting film having a low resistance and a high transmittance in the visible to near-infrared region is formed by vacuum deposition methods. Since the amount of the oxygen gas introduced is small, the difference in composition between the film and the evaporation material is made small. This reduces the variations in composition and characteristics among films formed in large quantities. | 06-02-2011 |
20110147676 | OXIDE EVAPORATION MATERIAL AND HIGH-REFRACTIVE-INDEX TRANSPARENT FILM - An oxide evaporation material in the present invention comprises a sintered body containing indium oxide as a main component thereof and cerium with the Ce/In atomic ratio of more than 0.110 and equal to or less than 0.538, and has an L* value of 62 to 95 in the CIE 1976 color space. The oxide evaporation material with the L* value of 62 to 95 has an optimal oxygen amount. Accordingly, even when a small amount of oxygen gas is introduced into a film-formation vacuum chamber, a high-refractive-index transparent film having a refractive index of 2.15 to 2.51 at a wavelength of 550 nm, a low resistance, and a high transmittance in the visible to near-infrared region is formed by vacuum deposition methods. Since the introduced oxygen gas amount is small, the difference in composition between the film and the evaporation material is made small. | 06-23-2011 |
20120279564 | OXIDE EVAPORATION MATERIAL, VAPOR-DEPOSITED THIN FILM, AND SOLAR CELL - Provided are an oxide tablet for vapor deposition (oxide evaporation material), and a vapor-deposited thin film and a solar cell formed using the same. The tablet comprises a sintered body which contains indium oxide as a main component and cerium and which is subjected to no surface grinding after sintering, in which Comp | 11-08-2012 |
20130143359 | SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD OF THE SAME - A semiconductor device having a structure in which the structure is laminated in many stages is made thin. A reforming area is formed by irradiating a laser beam, where a condensing point is put together with the inside of the semiconductor substrate of a semiconductor wafer. Then, after applying the binding material of liquid state to the back surface of a semiconductor wafer by a spin coating method, this is dried and a solid-like adhesive layer is formed. Then, a semiconductor wafer is divided into each semiconductor chip by making the above-mentioned reforming area into a division origin. By pasting up this semiconductor chip on the main surface of the other semiconductor chip by the adhesive layer of the back surface, a semiconductor device having a structure in which the semiconductor device is laminated in many stages is manufactured. | 06-06-2013 |
20130153024 | MULTILAYER TRANSPARENT ELECTROCONDUCTIVE FILM AND METHOD FOR MANUFACTURING SAME, AS WELL AS THIN-FILM SOLAR CELL AND METHOD FOR MANUFACTURING SAME - A multilayer transparent electroconductive film is obtained by stacking a transparent electroconductive film (II) on a transparent electroconductive film (I), and in this structure, the transparent electroconductive film (I) contains one or more added elements selected from aluminum and gallium, and the content of the added elements is in a range represented by −2.18×[Al]+1.74≦[Ga]≦−1.92×[Al]+6.10. The transparent electroconductive film (II) contains one or more added elements selected from aluminum and gallium, and the content of the added elements is in a range represented by −[Al]+0.30≦[Ga]≦−2.68×[Al]+1.74. In this case, [Al] is the aluminum content expressed as the atomic ratio (%) Al/(Zn+Al) and [Ga] is the gallium content expressed as the atomic ratio (%) Ga/(Zn+Ga). | 06-20-2013 |
20130327395 | OXIDE EVAPORATION MATERIAL, TRANSPARENT CONDUCTING FILM, AND SOLAR CELL - An oxide evaporation material according to the present invention includes a sintered body containing indium oxide as a main component thereof and cerium with a Ce/In atomic ratio of 0.001 to 0.110. The L* value in the CIE 1976 color space is 62 to 95. The oxide evaporation material with the L* value of 62 to 95 has an optimal oxygen amount. Accordingly, even when a small amount of an oxygen gas is introduced into a film-formation vacuum chamber, a transparent conducting film having a low resistance and a high transmittance in the visible to near-infrared region is formed by vacuum deposition methods. Since the amount of the oxygen gas introduced is small, the difference in composition between the film and the evaporation material is made small. This reduces the variations in composition and characteristics among films formed in large quantities. | 12-12-2013 |
20140252643 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE - To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented. | 09-11-2014 |