Patent application number | Description | Published |
20100124388 | COMPOSITE BEARING MEMBER, MANUFACTURING METHOD OF COMPOSITE BEARING MEMBER, BEARING DEVICE AND ROTARY ELECTRICAL MACHINE - A composite bearing member | 05-20-2010 |
20110026864 | SLIDING MATERIAL, METHOD OF MANUFACTURING SLIDING MATERIAL, AND BEARING APPARATUS USING THE SAME - A sliding material includes a sliding surface member, a base member made of a material different from the sliding surface member, a bonding material layer disposed between the sliding surface member and the base member so as to bond the sliding surface member and the base member, and a sheet member made of an electromagnetic induction heating material. The sliding material is manufactured by bonding the sliding surface member and the base member by heating and melting the bonding material layer through electromagnetic induction heating of the sheet member. | 02-03-2011 |
20110091351 | BONDING COMPOSITION - A bonding composition ( | 04-21-2011 |
20140077377 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - According to one embodiment, the semiconductor device in the embodiment has an assembly substrate, a semiconductor chip, and a jointing layer. The semiconductor chip is joined to the assembly substrate via the jointing layer. An intervening diffusion barrier layer may be interposed between the chip and jointing layer. The jointing layer is an alloy layer mainly made of any metal selected from Sn, Zn and In or an alloy of Sn, Zn and In, and any metal selected from Cu, Ni, Ag, Cr, Zr, Ti and V or an alloy of any metal selected from Cu, Ni, Ag, Cr, Zr, Ti and V and any metal selected from Sn, Zn and In, where the alloy has a higher melting temperature than that of Sn, Zn and In or an alloy of Sn, Zn and/or In. | 03-20-2014 |
20140284797 | POWER SEMICONDUCTOR DEVICE FABRICATION METHOD, POWER SEMICONDUCTOR DEVICE - A method for fabricating a power semiconductor device that comprises a base substrate with a conductive layer on a surface of the base substrate and semiconductor components mounted on the base substrate includes forming a hardened layer on the surface of the conductive layer before mounting a semiconductor component on the base substrate. The forming of the hardened layer may optionally be performed using a peening process, for example, a shot peening process, a laser peening process, or an ultrasonic peening process. The conductive layer may comprise a metal such as, for example, aluminum or copper. | 09-25-2014 |
20150076516 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE - According to one embodiment, a semiconductor device includes a semiconductor element and a metal film. The semiconductor element has a first surface and a second surface opposite to the first surface. The metal film is provided above the second surface of the semiconductor element. The metal film includes Cr. | 03-19-2015 |
20150076699 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a semiconductor element, an interconnection layer, and a bonding layer. The interconnection layer includes Cu. The bonding layer includes a first alloy that is an alloy of Cu and a first metal other than Cu between the semiconductor element and the interconnection layer. A melting point of the first alloy is higher than a melting point of the first metal. | 03-19-2015 |
20150078414 | METHOD OF TESTING SEMICONDUCTOR DEVICE AND APPARATUS OF TESTING SEMICONDUCTOR DEVICE - According to one embodiment, in a method of testing a semiconductor device, the semiconductor device has a semiconductor element and a substrate which are bonded by bonding material including metal fine particles. Image data of a heat distribution in the semiconductor device are temporally acquired while heating the semiconductor device. A time change of a fractal dimension based on the image data is calculated. An inclination of the time change of the fractal dimension is calculated. The inclination and a reference inclination set in advance are compared. Whether or not the semiconductor device is good is determined. | 03-19-2015 |