Patent application number | Description | Published |
20090057264 | HIGH THROUGHPUT LOW TOPOGRAPHY COPPER CMP PROCESS - Embodiments described herein generally provide a method for processing metals disposed on a substrate in a chemical mechanical polishing system. The apparatus advantageously facilitates efficient bulk and residual conductive material removal from a substrate. In one embodiment a method for chemical mechanical polishing (CMP) of a conductive material disposed on a substrate is provided. A substrate comprising a conductive material disposed over an underlying barrier material is positioned on a first platen containing a first polishing pad. The substrate is polished on a first platen to remove a bulk portion of the conductive material. A rate quench process is performed in order to reduce a metal ion concentration in the polishing slurry. The substrate is polished on the first platen to breakthrough the conductive material exposing a portion of the underlying barrier material. | 03-05-2009 |
20090061741 | ECMP POLISHING SEQUENCE TO IMPROVE PLANARITY AND DEFECT PERFORMANCE - A method for processing a substrate having a conductive layer disposed thereon is provided. The substrate is coupled with a planarizing head. The planarizing head is moved to a position above a polishing pad assembly. The planarizing pad is positioned relative to the polishing pad assembly without applying a voltage to the substrate. A first voltage is applied to the substrate for a first time period. A second voltage is applied to the substrate for a second time period in order to remove a portion of the conductive layer, wherein the second voltage is greater than the first voltage. In certain embodiments, applying a first voltage to the substrate further comprises forming a uniform passivation layer on the conductive layer. | 03-05-2009 |
20120003759 | ENDPOINT CONTROL DURING CHEMICAL MECHANICAL POLISHING BY DETECTING INTERFACE BETWEEN DIFFERENT LAYERS THROUGH SELECTIVITY CHANGE - Embodiments described herein relate to methods of detecting an endpoint for a target substrate during chemical mechanical polishing process. In one embodiment, the method includes polishing one or more target substrates at a first film removal rate to provide reference spectra, polishing one or more target substrates at a second film removal rate to provide current spectra of the one or more target substrates, wherein the second film removal rate is different from the first film removal rate, identifying an interface transition between different layers formed on the one or more target substrates using a sequence of endpoint values obtained based on the reference spectra collected during polishing of the one or more reference substrates, and comparing each current spectrum obtained from current spectra of the one or more target substrates to the reference spectra to obtain the sequence of endpoint values. After identifying the interface transition between different layers formed on the one or more target substrates, the one or more target substrates is optionally overpolished to past a target polishing thickness. | 01-05-2012 |
20120026492 | DETECTION OF LAYER CLEARING USING SPECTRAL MONITORING - A method of polishing includes polishing a substrate having a second layer overlying a first layer, measuring a sequence of groups of spectra of light from the substrate while the substrate is being polished, each group of the groups of spectra including spectra from different locations on the substrate, for each group, calculating a value for a dispersion parameter of the spectra in the group to generate a sequence of dispersion values, and detecting exposure of the first layer based on the sequence of dispersion values. | 02-02-2012 |
20120034844 | SPECTROGRAPHIC MONITORING USING INDEX TRACKING AFTER DETECTION OF LAYER CLEARING - A method of controlling polishing includes storing a library having a plurality of reference spectra, each reference spectrum of the plurality of reference spectra having a stored associated index value, polishing a substrate having a second layer overlying a first layer, measuring a sequence of spectra of light from the substrate during polishing, for each measured spectrum of the sequence of spectra, finding a best matching reference spectrum to generate a sequence of best matching reference spectra, determining the associated index value for each best matching spectrum from the sequence of best matching reference spectra to generate a sequence of index values, detecting exposure of the first layer, fitting a function to a portion of the sequence of index values corresponding to spectra measured after detection of exposure of the first layer, and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on the function. | 02-09-2012 |
20120034845 | TECHNIQUES FOR MATCHING MEASURED SPECTRA TO REFERENCE SPECTRA FOR IN-SITU OPTICAL MONITORING - A method of controlling polishing includes storing a library having a plurality of reference spectra, polishing a substrate, measuring a sequence of spectra of light from the substrate during polishing, for each measured spectrum of the sequence of spectra, finding a best matching reference spectrum using a matching technique other than sum of squared differences to generate a sequence of best matching reference spectra, and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on the sequence of best matching reference spectra. Finding a best matching reference spectrum may include performing a cross-correlation of the measured spectrum with each of two or more of the plurality of reference spectra from the library and selecting a reference spectrum with the greatest correlation to the measured spectrum as a best matching reference spectrum. | 02-09-2012 |
20120100781 | MULTIPLE MATCHING REFERENCE SPECTRA FOR IN-SITU OPTICAL MONITORING - A method of controlling polishing includes storing a plurality libraries, each library including a plurality of reference spectra, polishing a substrate, measuring a sequence of spectra of light from the substrate during polishing, and for each measured spectrum of the sequence of spectra, finding a best matching first reference spectrum from a first library from the plurality of libraries and finding a best matching second reference spectrum from a different second library from the plurality of libraries, determining a first value associated with the best matching first reference spectrum and determining a second value from the best matching second reference spectrum, and calculating a third value from the first value and the second value to generate a sequence of calculated third values. At least one of a polishing endpoint or an adjustment for a polishing rate can be determined based on the sequence of calculated third values. | 04-26-2012 |
20120276814 | AUTOMATIC SELECTION OF REFERENCE SPECTRA LIBRARY - A computer-implemented method of generating reference spectra includes polishing a plurality of set-up substrates, the plurality of set-up substrates comprising at least three set-up substrates, measuring a sequence of spectra from each of the plurality of set-up substrates during polishing with an in-situ optical monitoring system to provide a plurality of sequences of spectra, generating a plurality of sequences of potential reference spectra from the plurality of sequences of spectra, determining which sequence of potential reference spectra of the plurality of sequences provides a best match to remaining sequences of the plurality of sequences, and storing the sequence of potential reference spectra determined to provide the best match as reference spectra, and selecting and storing the sequence of potential reference spectra. | 11-01-2012 |
20140004626 | TEMPERATURE CONTROL OF CHEMICAL MECHANICAL POLISHING | 01-02-2014 |
20140024291 | Endpoint Detection During Polishing Using Integrated Differential Intensity - A method of controlling a polishing operation includes polishing a substrate, during polishing obtaining a sequence over time of measured spectra from the substrate with an in-situ optical monitoring system, for each measured spectrum from the sequence of measured spectra determining a difference between the measured spectrum and an immediate previous spectrum from the sequence, accumulating the difference for each measured spectrum to generate a total difference, comparing the total difference to a threshold, and detecting a polishing endpoint based on the comparison of the total difference to the threshold. | 01-23-2014 |
20140024292 | Polishing Control Using Weighting With Default Sequence - A method of controlling polishing includes storing a sequence of default values, polishing a substrate, monitoring the substrate during polishing with an in-situ monitoring system, generating a sequence of measured values from measurements from the in-situ monitoring system, combining the sequence of measured values with the sequence of default values to generate a sequence of modified values, fitting a function to the sequence of modified values, and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on the function. | 01-23-2014 |
20140024293 | Control Of Overpolishing Of Multiple Substrates On the Same Platen In Chemical Mechanical Polishing - A polishing method includes simultaneously polishing a first substrate and a second substrate on the same polishing pad, storing a default overpolishing time, determining first and second polishing endpoint times of the first and substrates with the in-situ monitoring system, determining a difference between the first and second polishing endpoint times, and determining whether the difference exceeds a threshold. If the difference is less than the threshold, then an overpolishing stop time is calculated and polishing of the first substrate and the second substrates is halted simultaneously at the overpolishing stop time. If the difference is greater than the threshold, then first and second overpolishing stop times that equal the first and second endpoint times plus the default overpolishing time are calculated, and polishing of the first and second substrates is halted at the first and second overpolishing stop times, respectively. | 01-23-2014 |
20140027407 | Monitoring Retaining Ring Thickness And Pressure Control - A chemical mechanical polishing apparatus includes a carrier head including a retaining ring having a plastic portion with a bottom surface to contact a polishing pad, an in-situ monitoring system including a sensor that generates a signal that depends on a thickness of the plastic portion, and a controller configured to receive the signal from the in-situ monitoring system and to adjust at least one polishing parameter in response to the signal to compensate for non-uniformity caused by changes in the thickness of the plastic portion of the retaining ring. | 01-30-2014 |
20140030956 | CONTROL OF POLISHING OF MULTIPLE SUBSTRATES ON THE SAME PLATEN IN CHEMICAL MECHANICAL POLISHING - A polishing method includes positioning two substrates in contact with the same polishing pad. Prior to commencement of polishing and while the two substrates are in contact with the polishing pad, two starting values are generated from an in-situ monitoring system. Either a starting polishing time or a pressure applied to one of the substrates can be adjusted so that the two substrates have closer endpoint conditions. During polishing the two substrates are monitored with the in-situ monitoring system to generate a two sequences of values, and a polishing endpoint can be detected or an adjustment for a polishing parameter can be based on the two sequences of values. | 01-30-2014 |
20140141694 | In-Sequence Spectrographic Sensor - A method of controlling a polishing system includes polishing a substrate at a first polishing station, transporting the substrate to an in-line optical metrology system positioned between the first polishing station and a second polishing station, at the in-line optical metrology system measuring a spectrum reflected from the substrate, and generating a characterizing value from the spectrum, determining that the substrate needs rework based on the characterizing value, returning the substrate to the first polishing station and performing rework of the substrate at the first polishing station; and transporting the substrate to the second polishing station and polishing the substrate at the second polishing station. | 05-22-2014 |
20140222188 | ENDPOINT CONTROL OF MULTIPLE SUBSTRATES OF VARYING THICKNESS ON THE SAME PLATEN IN CHEMICAL MECHANICAL POLISHING - A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate. | 08-07-2014 |