22nd week of 2011 patent applcation highlights part 12 |
Patent application number | Title | Published |
20110127436 | RADIATION TOMOGRAPHY APPARATUS - A detector ring of radiation tomography apparatus according to this invention has a fracture portion having no scintillation counter crystal arranged therein. Moreover, the radiation tomography apparatus according to this invention includes a correlated data complementation section. The correlated data complementation section forms correlated data when assuming that a first scintillation counter crystal actually provided in the detector ring is in the fracture portion, and additionally stores it to a correlated data storing section, thereby complementing correlated data in the fracture portion. As noted above, the correlated data complementation section obtains positional information under assumption that the scintillation counter crystals are in the fracture portion and a corresponding number of coincident events. Consequently, this invention may realize acquisition of faithful detecting efficiencies in the scintillation counter crystals. Therefore, the radiation tomography apparatus may be provided that allows creation of radiological images suitable for diagnosis. | 2011-06-02 |
20110127437 | Space Radiation Detector With Spherical Geometry - A particle detector is provided, the particle detector including a spherical Cherenkov detector, and at least one pair of detector stacks. In an embodiment of the invention, the Cherenkov detector includes a sphere of ultraviolet transparent material, coated by an ultraviolet reflecting material that has at least one open port. The Cherenkov detector further includes at least one photodetector configured to detect ultraviolet light emitted from a particle within the sphere. In an embodiment of the invention, each detector stack includes one or more detectors configured to detect a particle traversing the sphere. | 2011-06-02 |
20110127438 | Dosimeter Powered by Passive RF Absorption - A system for determining an amount of radiation includes a dosimeter configured to receive the amount of radiation, the dosimeter comprising a circuit having a resonant frequency, such that the resonant frequency of the circuit changes according to the amount of radiation received by the dosimeter, the dosimeter further configured to absorb RF energy at the resonant frequency of the circuit; a radio frequency (RF) transmitter configured to transmit the RF energy at the resonant frequency to the dosimeter; and a receiver configured to determine the resonant frequency of the dosimeter based on the absorbed RF energy, wherein the amount of radiation is determined based on the resonant frequency. | 2011-06-02 |
20110127439 | RADIATION SENSOR AND RADIATION IMAGE DETECTION APPARATUS - Provided are a radiation sensor having a first flexible substrate provided with a phosphor layer which converts incident radiation into an electromagnetic wave in a wavelength region that is at least different from that of the radiation; an organic photoelectric conversion layer which includes a charge transport layer and a charge generation layer containing a charge transporting agent and 55% by mass to 75% by mass of a polymer binder, and photoelectrically converts the electromagnetic wave; a second flexible substrate provided with a charge detection layer which includes a storage capacitor and a thin film transistor and is adapted to read electrical charge generated at the organic photoelectric conversion layer; and a polymer subbing layer disposed between the organic photoelectric conversion layer and the charge detection layer, and a radiation image detection apparatus using the radiation sensor. | 2011-06-02 |
20110127440 | RADIOGRAPHIC IMAGING APPARATUS - There is provided a radiographic imaging apparatus including: a control unit configured as a flat plate shape housing a control section and a power source section; a panel unit configured as a flat plate shape housing a radiation detection panel; and a connection member that rotatably connects one edge portion of each of the control unit and the panel unit so as to adopt two states: a closed state in which one face of the control unit faces one face of the panel unit on the opposite side to an irradiation face irradiated with radiation, and an open state in which the one face of the control unit and the one face of the panel unit on the opposite side are side-by-side in a same flat plane. | 2011-06-02 |
20110127441 | LIGHT OR RADIATION IMAGE PICKUP APPARATUS - An X-ray detector provided for a radiation image pickup apparatus of this invention includes two types of areas, i.e. an image area for X-ray detection, and an image area for time variation noise detection to detect time variation noises generating from circuits of the X-ray detector. Consequently, time variation noises can be detected properly, regardless of damage to gate circuits of an active matrix substrate, by reading charge signals from the image area for time variation noise detection before a gate drive circuit is set to ON. As a result, a radiation image pickup apparatus with improved image quality can be manufactured. | 2011-06-02 |
20110127442 | METHOD AND DEVICE FOR GENERATING EUV RADIATION OR SOFT X-RAYS - The present invention relates to a method and device for generating optical radiation, in particular EUV radiation or soft x-rays, by means of an electrically operated discharge. A plasma ( | 2011-06-02 |
20110127443 | INTEGRATED BEAM MODIFYING ASSEMBLY FOR USE WITH A PROTON BEAM THERAPY MACHINE - An integrated beam modifying assembly for use with a proton beam therapy machine. Typically the snouts of a proton beam therapy machine are adapted to receive separate apertures and range compensators. Applicants provide an integrated assembly for slotting into the snout of a proton beam therapy machine, which integrated assembly incorporates both aperture material and range compensator material for profiling, shaping, and modulating the beam. | 2011-06-02 |
20110127444 | PARTICLE ANALYZING APPARATUS AND PARTICLE IMAGING METHOD - A particle analyzing apparatus, comprising: a flow cell which forms a specimen flow including particles; first and second light sources; an irradiation optical system which applies lights emitted from the first and second light sources so that the lights are applied to the specimen flow; a detector which detects forward scattered light, the forward scattered light being emitted from the first light and scattered by the particle in the specimen flow, and generates a signal according to the detected scattered light; a light blocking member disposed between the flow cell and the detector; a controller which obtains characteristic parameters of the particle based on the signal from the detector; and an imaging device which captures an image of the particle in the specimen flow using the light from the second light source is disclosed. Particle imaging method is also disclosed. | 2011-06-02 |
20110127445 | UPCONVERSION FLUORESCENT NANO-STRUCTURED MATERIAL AND USES THEREOF - Upconversion fluorescent nano-structured material(s) comprising at least one compound of formula (M | 2011-06-02 |
20110127446 | NANOSTRUCTURE SYSTEMS AND METHODS FOR SENSING AN ANALYTE - A method of detecting an analyte in an environment, includes immobilizing at least one photoactive composition on nanostructures, the photoactive composition exhibiting emission that is sensitive to the analyte; applying electromagnetic radiation to the immobilized photoactive moiety for a period of time; measuring at least one response; and using the measured response to determine the presence the analyte in the environment. The nanostructures can, for example, include carbon nanostructures. In a number of embodiments, the analyte is oxygen. | 2011-06-02 |
20110127447 | Method and device for performing quantum control on infinitesimal quanta - A method for performing quantum control on infinitesimal quanta includes: an independent reaction space provision step, wherein at least one three-dimensional closed space is provided; an infinitesimal-quantum kinetic energy enhancement step, wherein differently shaped reaction elements are provided on at least one inner surface of each closed space, each reaction element having at least two slits and plural pores; and a parameter control step, wherein at least a first reaction parameter is provided, and, upon occurrence thereof, wave control is performed on a corresponding one of the at least one closed space. The method provides an executable quantum control mechanism which is meaningful in terms of reaction and capable of modifying the properties of matter in a purely physical manner, such that a wavefunction is controlled to provide different energies, thereby providing assistance to environmental improvement techniques, agricultural techniques, and traditional medical techniques. | 2011-06-02 |
20110127448 | Treating Mixable Materials By Radiation - Provided are methods, systems, and radiating units for radiating mixable material, such as water, blood, sand, or the like, with sterilizing radiation. In one embodiment, the method includes immersing a radiation source in the mixable material, and moving the immersed radiation source inside the mixable material in a non regular fashion. The radiating unit optionally includes a radiation source; a power source for powering the radiation source; and a mobility agent that moves the radiating unit. The system optionally includes at least one radiating unit; and a mobility agent for moving the radiating unit. | 2011-06-02 |
20110127449 | ELECTRONIC DEVICE WITH REMOTE CONTROL CAPABILITY - An electronic device includes a housing, a PCB, a LED mounted to the PCB, and a support member. The housing defines a cavity, and a through hole communicating with the cavity. The PCB is received in the cavity. The LED includes a lens received in the through hole. The support member, which is fixed to the housing to provide support for the lens, includes an elastic latch arm extending close to the through hole to form an angle with a surface of the lens. An end of the elastic latch arm contacts the surface of the lens to prevent the lens from being detached from the through hole. | 2011-06-02 |
20110127450 | Laser-Heated Infrared Source - Described are infrared light sources and methods for generating infrared radiation. The infrared light source includes a source of laser radiation, a target and an enclosure. The target is positioned in a path of an output region of the source of laser radiation. The target includes an absorbing material that absorbs radiation at a wavelength within the lasing spectrum of the source of laser radiation and converts the absorbed radiation into thermal energy. The enclosure defines a cavity that includes the target. The enclosure includes an infrared reflecting film on a side that defines the cavity. | 2011-06-02 |
20110127451 | RADIATION SHIELDING METHOD AND RADIATION SHIELDING DEVICE - To include a step of installing a hollow container ( | 2011-06-02 |
20110127452 | Switching Valve and Method for Switching a Switching Valve - A switching valve includes a fluid housing, at least one switching element within the fluid housing, and an actuator outside the fluid housing, wherein the actuator is configured to cause a pulse-like transmission of force on the switching element by means of an impact-like force effect on the fluid housing, so as to move the switching element from a first position to a second position, the switching element in the first position defining a first fluidic state of a fluid path through the fluid housing, and the switching element in the second position defining a second fluidic state of a fluid path through the fluid housing, which second fluidic state differs from the first fluidic state. | 2011-06-02 |
20110127453 | BURGLAR PROOF LIQUID SPRAYING DEVICE - A burglar proof liquid spraying device comprises a circuit board; a liquid bottle storing spraying liquid and high pressure gas; the spraying liquid will cause a person not to act in certain time period as the liquid is sprayed on a body of a person; the liquid bottle | 2011-06-02 |
20110127454 | CONTROLLED FLOW ADMINISTRATION SET - A flow control device includes a connector defining a first receiving formation for receiving a first conduit, a second receiving formation for receiving a second conduit and a cross member separating the first receiving formation and the second receiving formation. An orifice plate is received in the cross member to control flow of fluid, in use, through the conduits received in the first and the second receiving formations of the connector, the orifice plate defining at least one substantially frustoconical orifice. | 2011-06-02 |
20110127455 | Improved Microvalve Device - A microvalve device includes a body, a valve element supported for movement relative to the body, and an actuator operatively coupled to the valve element for moving the valve element in a normal range of travel. A travel limiting structure operatively cooperates with at least one of the valve element and the actuator to effectively limit the magnitude of movement of the valve element or the actuator outside the normal range of travel to prevent failure of the body, the valve element, or the actuator due to exceeding failure stress limits. A method of forming a microvalve with such a travel limiting structure is also disclosed. | 2011-06-02 |
20110127456 | ROTATING VALVE ASSEMBLY FOR HIGH TEMPERATURE AND HIGH PRESSURE OPERATION - A rotating valve assembly includes an inner cup having at least one inlet port; an outer cup having at least one inlet port, the outer cup rotatably mounted concentric with the inner cup by a bearing arrangement; and a cooling system located between the inner cup and the bearing arrangement for providing a thermal barrier between the inner cup and the bearing arrangement. The valve assembly also includes a labyrinth sealing arrangement located around the at least one inlet port of one of the inner and outer cups for preventing leakage of pressure waves generated by detonations or quasi-detonations within a combustion chamber of the inner cup. | 2011-06-02 |
20110127457 | Metal Seal for Ball Valves and Ball Valve Comprising Said Seal - A metal seal for valves of the ball type, the metal seal including a rigid annular body including a thickness in the longitudinal direction, and an annular lip having a front surface for relative contact with a surface of the ball, wherein said front surface for making relative contact comprises inset radial grooves. | 2011-06-02 |
20110127458 | By-Pass Valve for Heat Exchanger - A by-pass valve for a heat exchanger circuit. The by-pass valve includes a housing defining a serially communicating first bore, second bore and third bore substantially aligned along a central axis with a valve seat facing the first bore at a juncture between the first bore and second bore and a spring seat facing the second bore at a juncture between the second bore and third bore, the first bore, second bore and third bore forming at least a portion of a closable flow path between a first opening and a second opening in the housing. An actuator located in the housing has a reciprocating seal disposed for movement along the central axis for engaging the valve seat and closing a valve opening between the first bore and second bore. A coiled return spring is mounted in the housing for urging the reciprocating seal towards the first bore to open the valve opening, the return spring having a first end acting on the reciprocating seal and a second end engaging the spring seat. The second bore and third bore each have a different cross-sectional shape transverse to the central axis. | 2011-06-02 |
20110127459 | MICROVALVE AND VALVE SEAT MEMBER - In a microvalve, a valve seat includes a cylinder portion that includes a through hole in a central portion thereof, and a flange portion that is provided around an axial end of the cylinder portion and that has a thick seal portion on a periphery of the flange portion. The cylinder portion is disposed in an opening of a valve housing with a gap δ therebetween, and the seal portion is able to move away from the seal surface provided around the opening and away from the displacement member. In an open state, at least one of a flow path through the through hole and a flow path through the gap between the cylinder portion and the opening is open, and in a closed state, the seal portion is sandwiched between the displacement member and the seal surface. | 2011-06-02 |
20110127460 | FLUID CONTROL DEVICE - A fluid control valve having a valve trim formed from a geo-polymer-based material so that it is capable of withstanding rapid and extreme thermal shock which can cause damage due to differential expansion of metal components. This invention uses geo-polymer-based materials which will resist damage and can be produced at lower cost with lower embodied energy than the prior art. | 2011-06-02 |
20110127461 | THERMALLY CONDUCTIVE COMPOSITION AND METHOD FOR PRODUCING THEM - Disclosed is a thermally conductive composition obtained by a sol-gel method in which a sol containing inorganic particles, an alkoxysilane, and water is prepared, the sol is gelated to prepare a gel, and the gel is thermally cured. | 2011-06-02 |
20110127462 | ELECTRODE COMPOSITION FOR INKJET PRINT, ELECTRODE PREPARED USING THE ELECTRODE COMPOSITION, AND LITHIUM BATTERY COMPRISING THE ELECTRODE - A negative electrode composition for inkjet print including beta phase TiO | 2011-06-02 |
20110127463 | POSITIVE ELECTRODE MATERIAL, ITS MANUFACTURING METHOD AND LITHIUM SECONDARY BATTERY - The object of the invention is to provide positive electrode material in which a discharge rate characteristic and battery capacity are hardly deteriorated in the environment of low temperature of −30° C., its manufacturing method and a lithium secondary battery using the positive electrode material. The invention is characterized by the positive electrode material in which plural primary particles are flocculated and a secondary particle is formed, and the touch length of the primary particles is equivalent to 10 to 70% of the length of the whole periphery on the section of the touched primary particles. | 2011-06-02 |
20110127464 | NANOPARTICLE COMPOSITION AND METHODS OF MAKING THE SAME - A method of fabricating copper nanoparticles includes heating a copper salt solution that includes a copper salt, an N,N-dialkylethylenediamine, and a C6-C18 alkylamine in an organic solvent to a temperature between about 30° C. to about 50° C.; heating a reducing agent solution that includes a reducing agent, an N,N-dialkylethylenediamine, and a C6-C18 alkylamine in an organic solvent to a temperature between about 30° C. to about 50° C.; and adding the heated copper salt solution to the heated reducing agent solution, thereby producing copper nanoparticles. A composition includes copper nanoparticles, a C6-C18 alkylamine and an N,N′-dialkylethylenediamine ligand. Such copper nanoparticles in this composition have a fusion temperature between about 100° C. to about 200° C. A surfactant system for the stabilizing copper nanoparticles includes an N,N′-dialkylethylenediamine and a C6-C18 alkylamine. | 2011-06-02 |
20110127465 | LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY DEVICE - The subject is to provide a liquid crystal composition that satisfies at least one of characteristics such as a high maximum temperature of a nematic phase, a low minimum temperature of a nematic phase, a small viscosity, a suitable optical anisotropy, a large dielectric anisotropy, a large specific resistance, a high stability to ultraviolet light, a high stability to heat and a large elastic constant, or that is suitably balanced regarding at least two of the characteristics. The subject is to provide an AM device that has a short response time, a large voltage holding ratio, a large contrast ratio, a long service life and so forth. The invention provides a liquid crystal composition that has a nematic phase and includes a four-ring compound containing a dioxane ring and having a high maximum temperature and a large dielectric anisotropy as a first component, a specific two-ring compound having a small viscosity as a second component, a specific three-ring compound having a large dielectric anisotropy as a third component and a specific four-ring compound having a high maximum temperature and a large dielectric anisotropy, and also provides a liquid crystal display device containing this composition. | 2011-06-02 |
20110127466 | GREEN PHOSPHOR AND DISPLAY DEVICE INCLUDING THE SAME - A green phosphor including a compound represented by Formula 1 (Y | 2011-06-02 |
20110127467 | COMPOSITION COMPRISING PHOSPHORESCENT COMPOUND AND LIGHT EMITTING DEVICE USING THE COMPOSITION - A composition comprising a phosphorescent compound, and a compound having a structure containing three or more repeating units having a dipole moment dimension of 1.0 Debye or more connected in series,
| 2011-06-02 |
20110127468 | Polycarbonate for making extruded films that are virtually free of surface defects - Linear polycarbonate resin virtually free of surface defects that impair the suitability of the resin for demanding optical application is disclosed. Also disclosed is a process for the manufacture of the resin. The surface defects included in the resin are in the form of transparent fluorescing particles, the particle count of which portion that are 15 and 250 μm in size, is up to 1.8 counts/g, said count being determined by exciting the residue remaining after filtering a solution of said polycarbonate in methylene chloride through a Teflon filter of 5 μm pore size at a wavelength of 400-440 nm, 25× overall magnification and illumination time of 40 millisec. The polycarbonate is suitable for making films of improved optical properties. | 2011-06-02 |
20110127469 | Process For Decreasing Or Eliminating Unwanted Hydrocarbon And Oxygenate Products Caused By Fisher Tropsch Synthesis Reactions In A Syngas Treatment Unit - The present invention provides a process for decreasing or eliminating unwanted hydrocarbon and oxygenate products caused by FTS reactions in a syngas treatment unit by utilizing heat exchangers and optionally associated pipes that are substantially fabricated of a material selected from the group consisting of chromium containing alloys and carbon steel for heating up gas streams having a carbon monoxide partial pressure of less than or equal to one bar and obtained from a front end purification unit/cold box unit. | 2011-06-02 |
20110127470 | METHOD FOR TREATING ALTERNATIVE, CARBON-CONTAINING, LOW-CALORIC WASTE MATERIALS FOR USE IN FURNACE SYSTEMS - In a method for treating alternative, carbon-containing, low-caloric waste materials for use in furnace systems, in particular rotary tubular kilns for the production of clinker, the carbon-containing, alternative fuels are subjected to high-temperature gasification under anoxic conditions at temperatures above 1000° C., wherein water, water vapor or CO | 2011-06-02 |
20110127471 | DOPED GRAPHENE, METHOD OF MANUFACTURING THE DOPED GRAPHENE, AND A DEVICE INCLUDING THE DOPED GRAPHENE - A composition including graphene; and a dopant selected from the group consisting of an organic dopant, an inorganic dopant, and a combination including at least one of the foregoing. | 2011-06-02 |
20110127472 | CARBON NANOTUBE ASSEMBLY AND ELECTRICALLY CONDUCTIVE FILM - Provided is an aggregate of carbon nanotubes wherein a mixture of 10 mg of aggregate of carbon nanotubes, 30 mg of sodium polystyrene sulfonate and 10 mL of water is subjected to ultrasonic homogenizer treatment, subsequently subjected to centrifugal treatment at 20000 G, then 9 mL of supernatant is sampled, and the content of aggregate of carbon nanotubes in the supernatant is 0.6 mg/mL or more. The aggregate of carbon nanotubes of the present invention can provide a dispersion of an aggregate of carbon nanotubes having a high concentration through very good dispersibility. | 2011-06-02 |
20110127473 | METHOD OF REMOVING THE POLYMER ENCAPSULATING A NUCLEAR FUEL PELLET - Method for removing the epoxy and/or phenolic polymer encapsulating a nuclear fuel pellet comprising uranium dioxide UO | 2011-06-02 |
20110127474 | STAPLE REMOVER - A staple remover includes: a fixed seat including a front end portion and a bottom surface; a staple removing blade including a tip disposed in the front end portion, and an elongate staple passing surface inclined relative to the bottom surface; a moving seat disposed pivotally on the fixed seat; a staple retracting unit including a staple retracting member movable relative to the staple removing blade and having a claw, and a first biasing member for biasing the claw to contact the staple passing surface; and a motion transmitting mechanism including a first member connected to the moving seat, and a second member connected to the claw. When the moving seat is pivoted relative to the fixed seat to convert from a non-pressed state to a pressed state, the claw is moved from an extended position to a retracted position. | 2011-06-02 |
20110127475 | Cable Guide With Automatic Cable Release - A system, method and apparatus for guiding and installing cables in a building provides automatic and controlled release of cables that are temporarily retained by the cabling apparatuses to allow the once retained and now bundled cables to be permanently mounted in the building. The cabling apparatus has a frame supporting four elongated rollers so as to define a rectangular cable retention area bounded by the four elongated rollers. The cable retention area allows for the accumulation and retention of a number of cables fed through the cable retention area. A lower elongated roller of the four elongated rollers is pivotally connected to the frame such that pivoting of the lower elongated roller releases the accumulated cables. A remote controlled actuation system is connected to the pivoting lower elongated roller to provide automatic pivot control thereof. The system of a plurality of cabling apparatuses allows the stringing and temporary holding of one or more cables during a cabling installation and the simultaneous or individual release of the accumulated cables from the cabling apparatuses. | 2011-06-02 |
20110127476 | Cable Guide With Automatic Cable Release and Method of Use - A system, method and apparatus for guiding and installing cables in a building provides automated release of cables that are temporarily retained by the cabling apparatuses to allow the once retained and now bundled cables to be permanently mounted in the building. The cabling apparatus has a frame supporting four elongated rollers so as to define a rectangular cable retention area bounded by the four elongated rollers. The cable retention area allows for the accumulation and retention of a number of cables fed through the cable retention area. A lower elongated roller of the four elongated rollers is pivotally connected to the frame such that pivoting of the lower elongated roller releases the accumulated cables. A remote controlled actuation system is connected to the pivoting lower elongated roller to provide automated pivot control thereof. A closed-looped pulley system may used in conjunction with the cabling devices to pull the cables through the cabling devices. The system of a plurality of cabling apparatuses allows the stringing and temporary holding of one or more cables during a cabling installation and the simultaneous or individual release of the accumulated cables from the cabling apparatuses. | 2011-06-02 |
20110127477 | HOIST SYSTEMS - A hoist system includes a drive system and a shaft in rotatable connection with the drive system. The hoist system also includes a flexible first hoist member operatively connected to the shaft at a first longitudinal position thereon so that it can be wound around the shaft or unwound from around the shaft upon rotation of the shaft. The first hoist member extends from the shaft in a first direction. The hoist system also includes at least a second flexible hoist member operatively connected to the shaft at the first longitudinal position so that it can be wound around the shaft or unwound from around the shaft upon rotation of the shaft. The second hoist member extends from the shaft in a second direction, different from the first direction, so that the first hoist member and the second hoist member are wound around the shaft upon rotation of the shaft in a first or forward direction and are unwound from around the shaft upon rotation of the shaft in a second or reverse direction. The first hoist member and the second hoist member are wound on top of each other when the shaft is rotated in the forward direction. The hoist system also includes a first guide member spaced from the drive shaft on a first side of the drive shaft. The first hoist member passes around at least a portion of the first guide member and extends downward to be operatively connectible to an object to be hoisted. The hoist system further includes a second guide member spaced from the drive shaft on a second side of the drive shaft. The second side is different from the first side. The second hoist member passes around at least a portion of the second guide member and extends downward to be operatively connectible to an object to be hoisted. | 2011-06-02 |
20110127478 | HANG-UP DEVICE FOR AN ALL-TERRAIN VEHICLE - Apparatus for fastening an all-terrain vehicle (F) on steep terrain at stationary hang-up means ( | 2011-06-02 |
20110127479 | IMPACT ABSORBING BARRIER ASSEMBLY - Disclosed is an impact absorbing barrier assembly. The assembly includes a support having a pipe configuration and installed at the center line or the side of a road, an impact absorbing cylinder combined to the support and including a cylinder having a penetrating through-hole and being made by using one of ethylene vinyl acetate (EVA) and soft polyurethane, and including a rotation support pipe corresponding to the outside circumference of the support and inserted into the through-hole, a fence guide horizontally installed at upper and lower portions of the impact absorbing cylinder and at front and rear portions of the support to connect the supports, a fence guide combining device, and a rotation support device to support the rotation of the impact absorbing cylinder. The impact from a car collision with the impact absorbing barrier assembly may be reduced. | 2011-06-02 |
20110127480 | ENERGY ABSORBING POST FOR ROADSIDE SAFETY DEVICES - An energy-absorbing post for absorbing the impact energy of an errant vehicle wherein the impact energy is absorbed by out-of-place deformation in the material of the post. Out-of-plane deformation is provided by utilizing a through bolt extending through a splice connection between upper and lower posts sections. Alternatively, out-of-plane deformation is provided by leaving an axial gap on a splice bolts. For terminal applications, a single through-bolt is utilized to allow the upper post section to pivot during end on impacts. Bolt. tear out facilitators, including stress concentrators and pre-buckles, or an angled through-bolt decrease any initially high tear-out forces. Direct out-of-plane deformation is provided by extending a tab from a splice plate and connecting the tab to the post, by forming one or more slots in an upstream lateral face of the post and directly welding a splice plate near the slots, or by connecting a bent over splice plate on opposing planar sides thereof to facilitate out-of-plane deformation in a weldment area between the plate and the post. | 2011-06-02 |
20110127481 | Fence wire stretching device - A fence wire stretching device is provided having a square shape made up of five leg portions, three of which form three of the sides of the square. The fourth side of the square has a proximal leg portion and a distal leg portion that are pivotally attached together. The distal leg portion swings outward at an angle from the proximal leg portion so that the wire clamp mechanism is in an open position, and may then be pivoted back to be coaxial with the proximal leg so that the wire clamp mechanism is in a closed position. A vehicle attachment means is located at a first corner of the square, and a wire clamp mechanism is located at second corner of the square opposite the vehicle attachment means. A wire spool holding rod extends centrally across the square between a third corner and a fourth corner of the device, and is openably attached to the square so that a spool of fence wire may be slipped over the wire spool holding rod. | 2011-06-02 |
20110127482 | Combined structure of fence posts and rails - A combined structure of fence posts and rails is disclosed, which puts emphasis on the joining end made by the fence post and the rail, where a clasping member is set up on each of the two laterals of the joining end in an axial orientation, and the clasping member has one end fixed to the rail that is close to the joining fence post, while the other end has an increasing opening distance opposite to the fence post and is separated from the rail, and the rail has a breach at each lateral with respect to the location of the clasping member. Accordingly, a firm combination out of the fence posts and the rails is achieved by this invention, which is free of other associate components. | 2011-06-02 |
20110127483 | RESISTANCE CHANGE MEMORY AND MANUFACTURING METHOD THEREOF - According to one embodiment, a resistance-change memory of embodiment includes a first interconnect line extending in a first direction, a second interconnect line extending in a second direction intersecting with the first direction, and a cell unit. The cell unit is provided at an intersection of the first interconnect line and the second interconnect line. The cell unit includes a non-ohmic element having a silicide layer on at least one of first and second ends thereof, and a memory element to store data in accordance with a reversible change in a resistance state. The silicide layer includes a 3d transition metal element which combines with an Si element to form silicide and which has a first atomic radius, and at least one kind of an additional element having a second atomic radius greater than the first atomic radius. | 2011-06-02 |
20110127484 | RESISTANCE CHANGE MEMORY AND MANUFACTURING METHOD THEREOF - According to one embodiment, a resistance change memory includes a first interconnect extending in a first direction, a second interconnect extending in a second direction intersecting with the first direction, and a cell unit which is provided between the first interconnect and the second interconnect. The cell unit includes a non-ohmic element and a memory element. The non-ohmic element includes a first silicon layer of an n-conductivity type and a conducting layer in contact with a first face of the first silicon layer. The memory element stores data according to a reversible change of a resistance state. The first silicon layer includes a first element and a second element as donor. | 2011-06-02 |
20110127485 | KEYHOLE-FREE SLOPED HEATER FOR PHASE CHANGE MEMORY - Subject matter disclosed herein relates to a method of manufacturing a semiconductor integrated circuit device, and more particularly to a method of fabricating a phase change memory device. | 2011-06-02 |
20110127486 | Phase-change memory device, phase-change channel transistor and memory cell array - A phase-change channel transistor includes a first electrode; a second electrode; a memory layer provided between the first and second electrodes; and a third electrode provided for the memory layer with an insulating film interposed therebetween, wherein the memory layer includes at least a first layer formed from a phase-change material which is stable in either an amorphous phase or a crystalline phase at room temperature and a second layer formed from a resistive material, and wherein the resistance value of the second layer is smaller than the resistance value of the first layer in the amorphous phase, but is larger than the resistance value of the first layer in the crystalline phase. | 2011-06-02 |
20110127487 | ELECTRONIC DEVICE FOR A RECONFIGURABLE LOGIC CIRCUIT - The invention relates to an electronic device, comprising a field effect transistor and a resistive switch electrically coupled with each other, wherein the resistive switch is configured to be switched between a state of low resistance and a state of high resistance. | 2011-06-02 |
20110127488 | USES OF A CARBON NANOBUD MOLECULE AND DEVICES COMPRISING THE SAME - A carbon nanobud molecule ( | 2011-06-02 |
20110127489 | Light emitting device and method of manufacturing the same - Example embodiments relate to a light emitting device and a method of fabricating the light emitting device. The light emitting device may include an n-type clad layer including a plurality of nitride semiconductor layers, at least one interlayer disposed between the plurality of nitride semiconductor layers, a via hole in which a first electrode is formed, a p-type clad layer, and an active layer between the n-type clad layer and the p-type clad layer. | 2011-06-02 |
20110127490 | Method of Growing Uniform Semiconductor Nanowires without Foreign Metal Catalyst and Devices Thereof - Amongst the candidates for very high efficiency solid state lights sources and full solar spectrum solar cells are devices based upon InGaN nanowires. Additionally these nanowires typically require heterostructures, quantum dots, etc which all place requirements for these structures to be grown with relatively few defects. Further manufacturing requirements demand reproducible nanowire diameter, length etc to allow these nanowires to be embedded within device structures. Additionally flexibility according to the device design requires that the nanowire at the substrate may be either InN or GaN. According to the invention a method of growing relatively defect free nanowires and associated structures for group III—nitrides is presented without the requirement for foreign metal catalysts and overcoming the non-uniform growth of prior art non-catalyst growth techniques. The technique also allows for unique dot-within-a-dot nanowire structures. | 2011-06-02 |
20110127491 | LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - Disclosed is a light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system. The light emitting device may include a first conductive semiconductor layer including first conductive impurities, a second conductive semiconductor layer including second conductive impurities different from the first conductive impurities, an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer, and an AlInN-based semiconductor layer interposed between the active layer and the second conductive semiconductor layer while making contact with both of the active layer and the second conductive semiconductor and including the second conductive impurities. | 2011-06-02 |
20110127492 | Field Effect Transistor Having Nanostructure Channel - A field effect transistor (FET) includes a drain formed of a first material, a source formed of the first material, a channel formed by a nanostructure coupling the source to the drain, and a gate formed between the source and the drain and surrounding the nanostructure. | 2011-06-02 |
20110127493 | SELF ALIGNED CARBIDE SOURCE/DRAIN FET - A field effect transistor includes a metal carbide source portion, a metal carbide drain portion, an insulating carbon portion separating the metal carbide source portion from the metal carbide portion, a nanostructure formed over the insulating and carbon portion and connecting the metal carbide source portion to the metal carbide drain portion, and a gate stack formed on over at least a portion of the insulating carbon portion and at least a portion of the nanostructure. | 2011-06-02 |
20110127494 | OPTOELECTRONIC DEVICE HAVING A SANDWICH STRUCTURE AND METHOD FOR FORMING THE SAME - An optoelectronic device is formed having a sandwich structure, which consists of an inorganic semiconductor layer, an organic semiconductor layer, and another inorganic semiconductor layer, where both of the two inorganic semiconductor layers are produced by a solution process. | 2011-06-02 |
20110127495 | NEW COMPOUND AND ORGANIC LIGHT EMITTING DEVICE USING THE SAME - The present invention provides a novel compound that is capable of largely improving life span, efficiency, electrochemical stability and thermal stability of the organic light emitting device, and an organic light emitting device in which said compound is included in an organic compound layer. | 2011-06-02 |
20110127496 | Neutral Metallic Dendrimer Complexes - A charge-neutral organometallic dendrimer is described, said dendrimer having the formula (I): | 2011-06-02 |
20110127497 | ORGANIC LIGHT EMITTING DEVICE USING GRAPHENE - An organic light emitting device including graphene. The organic light emitting device includes a first electrode that is interposed between a transparent substrate and an organic layer emitting light, and includes graphene having a thickness of about 0.1 nanometer (nm) to about 10 nanometers (nm). | 2011-06-02 |
20110127498 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE - An organic light emitting diode (OLED) display device includes a first substrate; a first electrode positioned on the first substrate; an organic light emission layer positioned on the first electrode; a second electrode positioned on the organic light emission layer; and a capping layer positioned on the second electrode to cover the organic light emission layer and including an ultraviolet (UV) interception material intercepting UV rays irradiated to the organic light emission layer from the exterior. | 2011-06-02 |
20110127499 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An organic light emitting diode (OLED) display device and a method of fabricating the OLED display device, the OLED display device includes a substrate including an emission region and a non-emission region, a black matrix disposed in a region excluding a part of the emission region, a buffer layer disposed on the entire surface of the substrate, a semiconductor layer disposed on the buffer layer in the non-emission region, a gate electrode disposed on the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode and formed on the entire surface of the substrate, a first electrode formed on the gate insulating layer in the emission region, source and drain electrodes electrically connected with the semiconductor layer and the first electrode, an interlayer insulating layer insulating the source and drain electrodes from the gate electrode and opening a part of the first electrode, a pixel defining layer opening a part of the first electrode and disposed on the entire surface of the substrate, an organic layer disposed on the first electrode, and a second electrode disposed on the entire surface of the substrate. Here, the first electrode includes a transparent conductive oxide layer. | 2011-06-02 |
20110127500 | OLED DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting diode (OLED) display apparatus and a method of manufacturing the OLED display apparatus, the apparatus includes anode electrodes having different thicknesses for different types of sub-pixels. | 2011-06-02 |
20110127501 | ORGANIC LIGHT-EMITTING DIODE LMINAIRES - There is provided an organic light-emitting diode luminaire. The luminaire includes a patterned first electrode, a second electrode, and an electroluminescent layer therebetween. The electroluminescent layer includes:
| 2011-06-02 |
20110127502 | Method of manufacturing organic light emitting display apparatus and organic light emitting display apparatus - A method of manufacturing an organic light emitting display apparatus includes forming first electrodes on a substrate, forming a pixel defining layer (PDL) on the substrate and first electrodes, the PDL including openings exposing predetermined areas of the first electrodes, forming a charge transport layer on the PDL and inside the openings of the PDL, performing a hydrophobic process on the charge transport layer, performing a hydrophilic process on the charge transport layer, such that portions of the charge transport layer corresponding to the openings are made hydrophilic, forming organic light emitting layers on the charge transport layer, and forming a second electrode electrically connected to the organic light emitting layers. | 2011-06-02 |
20110127503 | COMPOSITION FOR ORGANIC ELECTROLUMINESCENCE ELEMENT, ORGANIC THIN FILM, ORGANIC ELECTROLUMINESCENCE ELEMENT, ORGANIC EL DISPLAY DEVICE AND ORGANIC EL LIGHTING - An organic electroluminescence element comprising a luminescent layer formed by a wet film-forming method, which is a long-life organic electroluminescence element is provided. A composition for an organic electroluminescence element, which comprises: two or more kinds of organic electroluminescence element materials including a luminescent material; and a solvent, wherein the composition satisfies the following formula (1): | 2011-06-02 |
20110127504 | Organic Thin Film Transistors - An organic thin film transistor comprising: a substrate; a source electrode and a drain electrode disposed over the substrate with a channel region therebetween; a layer of organic semiconductor disposed in the channel region; a gate electrode; and a gate dielectric disposed between the layer of organic semiconductor and the gate electrode, wherein the gate dielectric comprises a cross-linked polymer and a fluorine containing polymer. | 2011-06-02 |
20110127505 | ORGANIC ELECTROLUMINESCENCE DEVICE AND DISPLAY UNIT - An organic electroluminescence device having high light emitting efficiency and improved reliability is provided. The organic electroluminescence device includes: an anode containing at least aluminum (Al); a cathode; and an organic layer between the anode and the cathode, the organic layer including a light emitting layer. The organic layer has a hole injection layer composed of a sulfonic acid derivative between the anode and the light emitting layer. | 2011-06-02 |
20110127506 | OLED Display Architecture with Improved Aperture Ratio - A device such as a display region that includes a plurality of multi-color pixels is provided. Each pixel may have several types of organic light emitting devices that operate as sub-pixels, and at least one type of device may be shared by multiple pixels. Less-used and/or more efficient device types, such as deep blue and green light emitting devices, may be shared between multiple pixels, leading to an improved aperture ratio and fill factor for the device. | 2011-06-02 |
20110127507 | METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS, SURFACE TREATMENT DEVICE FOR ORGANIC LIGHT EMITTING DISPLAY APPARATUS, AND ORGANIC LIGHT EMITTING DISPLAY APPARATUS - Provided are a method of manufacturing an organic light emitting display apparatus, a surface treatment device for an organic light emitting display apparatus, and an organic light emitting display apparatus. To easily form organic emissive layers, the method includes: forming a first electrode on a substrate; forming on the first electrode a pixel defining layer having openings that expose predetermined portions of the first electrode; forming a charge carrying layer on the pixel defining layer and the first electrode exposed through the openings; hydrophobically treating portions of a surface of the charge carrying layer selectively, wherein the portions do not correspond to the openings, using a laser; forming organic emissive layers on the charge carrying layer; and forming a second electrode on the organic emissive layers so as to be electrically connected with the organic emissive layers. | 2011-06-02 |
20110127508 | ORGANIC ELECTRONIC DEVICE AND METHOD OF MANUFACTURE - An organic electronic device (e.g. OLED, OPV, OES, OTFT) is disclosed. The organic electronic device includes a carrier substrate, a first electrode layer disposed on the carrier substrate, an organic active electronic region disposed on the first electrode layer, and an indium second electrode layer disposed and formed on the organic active electronic region by applying heat on an indium solid at a temperature between the melting temperature of indium and a threshold operating temperature of the organic layers to melt the indium solid on the organic active electronic region. The organic active electronic region includes one or more organic layers. A method of manufacturing an organic electronic device is also disclosed. | 2011-06-02 |
20110127509 | ORGANIC LIGHT EMITTING DEVICE - An organic light emitting device (OLED) includes a polymeric fluorescent light emitting material doped with a phosphorescent dopant to form a fluorescent light emitting layer. The fluorescent light emitting layer may inhibit or prevent device degradation without affecting light emission from the light emitting layer, and may improve the service life of the OLED. | 2011-06-02 |
20110127510 | Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device - Objects of the present invention are to provide: a light-emitting element having a long lifetime and good emission efficiency and drive voltage. One embodiment of the invention is a light-emitting element including, between an anode and a cathode, at least a stack structure in which a first layer, a second layer, and a light-emitting layer are provided in order from the anode side. The first layer includes a first organic compound and an electron-accepting compound. The second layer includes a second organic compound having a HOMO level differing from the HOMO level of the first organic compound by from −0.2 eV to +0.2 eV. The light-emitting layer includes a third organic compound having a HOMO level differing from the HOMO level of the second organic compound by from −0.2 eV to +0.2 eV and a light-emitting substance having a hole-trapping property with respect to the third organic compound. | 2011-06-02 |
20110127511 | TOP-EMITTING ORGANIC LIGHT-EMITTING DEVICE - A top-emitting organic light-emitting device (OLED) including a reflective first electrode layer; a semitransparent second electrode layer facing the first electrode layer; and an organic layer between the first electrode layer and the second electrode layer, wherein the organic layer comprises a first layer, a second layer, and an emission layer between the first layer and the second layer, wherein the sum of the thicknesses of the emission layer and the second layer is about 0.15 to about 0.30 times the thickness of the entire organic layer. The top-emitting OLED may have high efficiency, and thus driving voltage may be reduced. | 2011-06-02 |
20110127512 | COPOLYMER AND POLYMER LIGHT EMITTING DEVICE USING THE SAME - A copolymer having a block (A′) composed of a repeating unit represented by the formula (I-1), and/or a block (A) containing a repeating unit represented by the formula (I-1) and a repeating unit represented by the formula (II). | 2011-06-02 |
20110127513 | NOVEL NITROGEN-CONTAINING HETEROCYCLIC COMPOUND AND ORGANIC ELECTRONIC DEVICE USING THE SAME - The present invention provides a novel nitrogen-containing heterocyclic derivative and an organic electronic device using the same. The organic electronic device according to the present invention has excellent properties in terms of efficiency, driving voltage, and a life span. | 2011-06-02 |
20110127514 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE - A display device comprises: a metal substrate ( | 2011-06-02 |
20110127515 | PHOTOELECTRIC CONVERSION ELEMENT - Disclosed is a photoelectric conversion element comprising a pair of electrodes, at least one of which is transparent or translucent, and a photoactive layer provided between the electrodes, wherein the photoactive layer contains an electron donating compound and an electron accepting compound, and the electron donating compound or the electron accepting compound is a polymer compound having a repeating unit represented by the following formula (I), and the proportion of the repeating unit represented by the formula (I) is the highest among all of the repeating units contained in the polymer compound: | 2011-06-02 |
20110127516 | POLYMER COMPOUND AND LIGHT-EMITTING ELEMENT USING SAME - A polymer compound including: the repeating unit shown in the following formula (I) (wherein: Ar | 2011-06-02 |
20110127517 | COMPOUND CONTAINING 1,3-DIENE STRUCTURE AND METHOD FOR PRODUCING SAME - Disclosed is a compound containing a divalent group represented by formula (I). (In formula (I), Ar | 2011-06-02 |
20110127518 | Transistor, method of manufacturing the transistor and electronic device including the transistor - Provided are a transistor, a method of manufacturing the transistor, and an electronic device including the transistor. The transistor may include a passivation layer on a channel layer, a source, a drain, and a gate, wherein the component of the passivation layer is varied in a height direction. The passivation layer may have a multi-layer structure including a silicon oxide layer, a silicon oxynitride layer, and a silicon nitride layer sequentially stacked. The channel layer may include an oxide semiconductor. | 2011-06-02 |
20110127519 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display device and a method for manufacturing the same. The organic light emitting display device includes: an insulating layer formed on a substrate; a resistance layer of oxide semiconductor formed on the insulating layer; a wiring layer connected to both side portions of the resistance layer; an organic layer formed on the upper portion including the resistance layer and the wiring layer; and a capping layer formed on the organic layer to be overlapped with the resistance layer. | 2011-06-02 |
20110127520 | Thin film transistor having oxide semiconductor layer as ohmic contactlayer and method of fabricating the same - A thin film transistor TFT, including a substrate, a gate electrode on the substrate, a gate insulating layer on the gate electrode, an active layer on the gate insulating layer, the active layer corresponding to the gate electrode and including a channel region, source and drain electrodes contacting the active layer, the source and drain electrodes being separate from each other, and an ohmic contact layer between the active layer and at least one of the source and drain electrodes, the ohmic contact layer including an oxide semiconductor material. | 2011-06-02 |
20110127521 | STACKED OXIDE MATERIAL, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE - One embodiment is a method for manufacturing a stacked oxide material, including the steps of forming an oxide component over a base component; forming a first oxide crystal component which grows from a surface toward an inside of the oxide component by heat treatment, and leaving an amorphous component just above a surface of the base component; and stacking a second oxide crystal component over the first oxide crystal component. In particular, the first oxide crystal component and the second oxide crystal component have common c-axes. Same-axis (axial) growth in the case of homo-crystal growth or hetero-crystal growth is caused. | 2011-06-02 |
20110127522 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Objects are to provide a semiconductor device for high power application in which a novel semiconductor material having high productivity is used and to provide a semiconductor device having a novel structure in which a novel semiconductor material is used. The present invention is a vertical transistor and a vertical diode each of which has a stacked body of an oxide semiconductor in which a first oxide semiconductor film having crystallinity and a second oxide semiconductor film having crystallinity are stacked. An impurity serving as an electron donor (donor) which is contained in the stacked body of an oxide semiconductor is removed in a step of crystal growth; therefore, the stacked body of an oxide semiconductor is highly purified and is an intrinsic semiconductor or a substantially intrinsic semiconductor whose carrier density is low. The stacked body of an oxide semiconductor has a wider band gap than a silicon semiconductor. | 2011-06-02 |
20110127523 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An embodiment is a semiconductor device which includes a first oxide semiconductor layer over a substrate having an insulating surface and including a crystalline region formed by growth from a surface of the first oxide semiconductor layer toward an inside; a second oxide semiconductor layer over the first oxide semiconductor layer; a source electrode layer and a drain electrode layer which are in contact with the second oxide semiconductor layer; a gate insulating layer covering the second oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating layer and in a region overlapping with the second oxide semiconductor layer. The second oxide semiconductor layer is a layer including a crystal formed by growth from the crystalline region. | 2011-06-02 |
20110127524 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a semiconductor device comprising a thin film transistor and wirings connected to the thin film transistor, in which the thin film transistor has a channel formation region in an oxide semiconductor layer, and a copper metal is used for at least one of a gate electrode, a source electrode, a drain electrode, a gate wiring, a source wiring, and a drain wiring. The extremely low off current of the transistor with the oxide semiconductor layer contributes to reduction in power consumption of the semiconductor device. Additionally, the use of the copper metal allows the combination of the semiconductor device with a display element to provide a display device with high display quality and negligible defects, which results from the low electrical resistance of the wirings and electrodes formed with the copper metal. | 2011-06-02 |
20110127525 | SEMICONDUCTOR DEVICE - An intrinsic or substantially intrinsic semiconductor, which has been subjected to a step of dehydration or dehydrogenation and a step of adding oxygen so that the carrier concentration is less than 1×10 | 2011-06-02 |
20110127526 | NON-LINEAR ELEMENT, DISPLAY DEVICE INCLUDING NON-LINEAR ELEMENT, AND ELECTRONIC DEVICE INCLUDING DISPLAY DEVICE - A non-linear element (such as a diode) which includes an oxide semiconductor and has a favorable rectification property is provided. In a transistor including an oxide semiconductor in which the hydrogen concentration is 5×10 | 2011-06-02 |
20110127527 | Neutron Detector with Gamma Ray Isolation - A silicon-on-insulator (SOI) neutron detector comprising a silicon-on-insulator structure, wherein the silicon-on-insulator structure consists of an active semiconductor layer, a buried layer, and a handle substrate, a lateral carrier transport and collection detector structure within the active semiconductor layer of the silicon-on-insulator structure, and a neutron to high energy particle converter layer on the active semiconductor layer. | 2011-06-02 |
20110127528 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - In a method for manufacturing a semiconductor device comprising an n-type transistor (Q | 2011-06-02 |
20110127529 | SILICON-ON-INSULATOR (SOI) STRUCTURE CONFIGURED FOR REDUCED HARMONICS AND METHOD OF FORMING THE STRUCTURE - Disclosed is semiconductor structure with an insulator layer on a semiconductor substrate and a device layer is on the insulator layer. The substrate is doped with a relatively low dose of a dopant having a given conductivity type such that it has a relatively high resistivity. Additionally, a portion of the semiconductor substrate immediately adjacent to the insulator layer can be doped with a slightly higher dose of the same dopant, a different dopant having the same conductivity type or a combination thereof. Optionally, micro-cavities are created within this same portion so as to balance out any increase in conductivity due to increased doping with a corresponding increase in resistivity. Increasing the dopant concentration at the semiconductor substrate-insulator layer interface raises the threshold voltage (Vt) of any resulting parasitic capacitors and, thereby reduces harmonic behavior. Also disclosed herein are embodiments of a method for forming such a semiconductor structure. | 2011-06-02 |
20110127530 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - A method of fabricating a semiconductor integrated circuit includes forming a first dielectric layer on a semiconductor substrate, patterning the first dielectric layer to form a first patterned dielectric layer, forming a non-single crystal seed layer on the first patterned dielectric layer, removing a portion of the seed layer to form a patterned seed layer, forming a second dielectric layer on the first patterned dielectric layer and the patterned seed layer, removing portions of the second dielectric layer to form a second patterned dielectric layer, irradiating the patterned seed layer to single-crystallize the patterned seed layer, removing portions of the first patterned dielectric layer and the second patterned dielectric layer such that the single-crystallized seed layer protrudes in the vertical direction with respect to the first and/or the second patterned dielectric layer, and forming a gate electrode in contact with the single-crystal active pattern. | 2011-06-02 |
20110127531 | DISPLAY DEVICE, TFT SUBSTRATE, AND METHOD OF FABRICATING THE TFT SUBSTRATE - Provided are a display device, a thin-film transistor (TFT) substrate, and a method of fabricating the TFT substrate. The method includes: forming a gate electrode on a pixel region of a substrate; forming a gate insulating film on the gate electrode; forming a semiconductor layer on the gate insulating film to overlap the gate electrode; forming a source electrode and a drain electrode to overlap the semiconductor layer and thus form a channel region; and forming a data insulating film on the source electrode and the drain electrode and patterning the data insulating film such that part of a contact hole formed in the data insulating film overlaps the channel region. | 2011-06-02 |
20110127532 | ARRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An array substrate for a liquid crystal display device includes a gate line on a substrate; a gate electrode connected to the gate line; a gate insulating layer on the gate line and the gate electrode and including a gate opening; an active layer on the gate insulating layer and overlapping the gate electrode; an ohmic contact layer on the active layer; a source electrode on the ohmic contact layer; a drain electrode on the ohmic contact layer and spaced apart from the source electrode, wherein one end of the drain electrode is disposed in the gate opening; a data line on the gate insulating layer and connected to the source electrode, the data line crossing the gate line; a passivation layer on the data line and the source and drain electrodes and including a pixel opening, wherein the pixel opening exposes the drain electrode in the gate opening and a portion of the gate insulating layer; and a pixel electrode on the gate insulating layer and in the pixel opening, the pixel electrode contacting the one end of the drain electrode in the gate opening. | 2011-06-02 |
20110127533 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device which may be configured to prevent oxygen or water from penetrating from the outside and which may be more easily mass produced is disclosed. A method of manufacturing an organic light-emitting display device is also disclosed. The organic light-emitting display device may include, for example, a thin-film transistor (TFT) with a gate electrode, an active layer electrically insulated from the gate electrode, source and drain electrodes electrically insulated from the gate electrode and contacting the active layer, an organic light-emitting diode electrically connected to the TFT and an insulating layer interposed between the TFT and the organic light-emitting diode. The insulating layer may include, for example, a first insulating layer covering the TFT, a second insulating layer formed of metal oxide and formed on the first insulating layer and a third insulating layer formed of metal oxide or metal nitride and formed on the second insulating layer. | 2011-06-02 |
20110127534 | ESD Induced Artifact Reduction Design for a Thin Film Transistor Image Sensor Array - A method is provided for fabricating an image sensor array in a manner that reduces the potential for defects resulting from electrostatic discharge events during fabrication of the image sensor array. The method includes: forming at least one pixel over a substrate, the pixel including a switching transistor and a photo-sensitive cell; and forming a dielectric interlayer over the pixel. A key step in the method of the present invention is depositing a first conductive layer over the dielectric interlayer. After the first conductive layer is formed, the image sensor array is well protected from ESD events because the first conductive layer spreads out any charge induced by tribo-electric charging events that may occur during subsequent fabrication processing steps, thereby reducing the potential for localized damage to the switching transistors upon the occurrence of ESD events. | 2011-06-02 |
20110127535 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREFOR - An active matrix substrate of a display device of the present invention includes a glass substrate ( | 2011-06-02 |